Abstract: A high efficiency outphasing power amplifier is disclosed which provides a high-efficiency, high-linearity outphasing amplifier capable of amplifying complex, wideband, multi-tone signals. Systems herein may amplify at least 256 symbol QAM signals with negligible distortion, while achieving high direct current-to-radio frequency efficiency sustainable at virtually all power levels. Embodiments of the outphasing amplifier employ a bridge output network formed from two complementary Class-D amplifiers to switch a dc supply voltage across the load. In embodiments, the phase of both halves of the bridge is varied from zero to +/?90 or zero to 180 degrees to split the workload, to correct for phase error within the bridge network and to control output power. Because the current through the load and thus through the two halves of the amplifier vary directly with output level, the efficiency remains high even when power output is low.

Abstract: The present invention is a high power direct transmitter with frequency-shift keying (FSK) modulation. The transmitter implements a high power, high efficiency power voltage-controlled oscillator (VCO) which allows for production of a modulated RF signal at the final stage (ex.—right at the antenna), thereby eliminating all driving stage power amplification and frequency translation. The transmitter further provides a low SWAP-C alternative to currently available solutions.

Abstract: A Class-D amplifier having a wideband driver circuit including a first transmission line transformer and a second transmission line transformer. An input of the first transmission line transformer is approximately 180 degrees out of phase from an input of the second transformer. A first transistor (Q1) has an input operatively connected to the first transmission line transformer. A second transistor (Q2) has an input being operatively connected to the second transmission line transformer. The first and the second transmission line transformers cooperate to provide a signal of sufficient magnitude to saturate their associated power transistors in the ON mode and to cut them off in the OFF mode with very small rise and fall transit times, thus providing high efficiency.

Abstract: A monolithic gallium arsenide (GaAs) phased array using integrated gold (Au) posts for interconnecting multiple substrate layers. The phased array includes a GaAs substrate having transmit/receive modules fabricated on one side and radiating elements etched on the backside of the same substrate. The conductive gold posts are integrated on the same side with the transmit/receive modules and interconnect the transmit/receive modules with a distribution network which is printed on a second substrate. Gold posts are also used to interconnect DC bias and control lines of the two substrates.

Abstract: A monolithic gallium arsenide (GaAs) phased array using integrated gold (Au) posts for interconnecting multiple substrate layers. The phased array includes a GaAs substrate having transmit/receive modules fabricated on one side and radiating elements etched on the backside of the same substrate. The conductive gold posts are integrated on the same side with the transmit/receive modules and interconnect the transmit/receive modules with a distribution network which is printed on a second substrate. Gold posts are also used to interconnect DC bias and control lines of the two substrates.