Abstract: The present disclosure discloses an earphone. The earphone may include a hook-shaped component, a connecting component, and a holding component. When the earphone is in a wearing state, the hook-shaped component may be configured to hang between a rear side of an ear of a user and a head of the user. The holding component may be configured to contact a front side of the ear. The connecting component may be configured to connect the hook-shaped component and the holding component and extend from the head to an outside of the head to cooperate with the hook-shaped component to provide the holding component with a pressing force on the front side of the ear.

Abstract: Disclosed are a method and system for interaction between an AP and a Modem. The method comprises: when an AP end sends a message to a Modem end, acquiring a service type corresponding to the message; searching, according to the service type, in pre-set multiple RILD threads for an RILD thread corresponding thereto; and sending the message to the Modem end through the RILD thread.

Abstract: Disclosed are a method and system for interaction between an AP and a Modem. The method comprises: when an AP end sends a message to a Modem end, acquiring a service type corresponding to the message; searching, according to the service type, in pre-set multiple RILD threads for an RILD thread corresponding thereto; and sending the message to the Modem end through the RILD thread.

Abstract: The present disclosure is generally directed to antiviral compounds, and more specifically directed to combinations of compounds which can inhibit the function of the NS5A protein encoded by Hepatitis C virus (HCV), compositions comprising such combinations, and methods for inhibiting the function of the NS5A protein.

Abstract: Compounds of Formula I, including pharmaceutically acceptable salts thereof, and compositions and methods for treating human immunodeficiency virus (HIV) infection are set forth:

Abstract: The present disclosure is generally directed to antiviral compounds, and more specifically directed to combinations of compounds which can inhibit the function of the NS5A protein encoded by Hepatitis C virus (HCV), compositions comprising such combinations, and methods for inhibiting the function of the NS5A protein.

Abstract: A method of forming a FinFET device includes ion implanting a diffusion-inhibiting species such as carbon into source and drain regions of a semiconductor fin prior to a dopant activating anneal. The implanted carbon, which can be incorporated into the fin in conjunction with a replacement metal gate process after defining a sacrificial gate but prior to forming sidewall spacers on the gate, forms a barrier that impedes dopant diffusion across the barrier, which enables abrupt junctions and higher overall dopant concentrations within the semiconductor fin.

Abstract: Compounds of Formula I, including pharmaceutically acceptable salts thereof, and compositions and methods for treating human immunodeficiency virus (HIV) infection are set forth:

Abstract: Compounds of Formulas I-VI, including pharmaceutically acceptable salts thereof, and compositions and methods for treating human immunodeficiency virus (HIV) infection are set forth.

Abstract: The present disclosure relates to compounds, compositions and methods for the treatment of Hepatitis C virus (HCV) infection. Also disclosed are pharmaceutical compositions containing such compounds and methods for using these compounds in the treatment of HCV infection.

Abstract: The present disclosure relates to compounds, compositions and methods for the treatment of Hepatitis C virus (HCV) infection. Also disclosed are pharmaceutical compositions containing such compounds and methods for using these compounds in the treatment of HCV infection.

Abstract: The present disclosure relates to compounds, compositions and methods for the treatment of hepatitis C virus (HCV) infection. Also disclosed are pharmaceutical compositions containing such compounds and methods for using these compounds in the treatment of HCV infection.

Abstract: The present disclosure relates to compounds, compositions and methods for the treatment of Hepatitis C virus (HCV) infection. Also disclosed are pharmaceutical compositions containing such compounds and methods for using these compounds in the treatment of HCV infection.

Abstract: The present disclosure relates to compounds, compositions and methods for the treatment of Hepatitis C virus (HCV) infection. Also disclosed are pharmaceutical compositions containing such compounds and methods for using these compounds in the treatment of HCV infection.

Abstract: The present disclosure relates to compounds, compositions and methods for the treatment of Hepatitis C virus (HCV) infection. Also disclosed are pharmaceutical compositions containing such compounds and methods for using these compounds in the treatment of HCV infection.

Abstract: The present disclosure relates to compounds, compositions and methods for the treatment of hepatitis C virus (HCV) infection. Also disclosed are pharmaceutical compositions containing such compounds and methods for using these compounds in the treatment of HCV infection.

Abstract: In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function metal portion to form a gate structure that enhances performance of a replacement gate field effect transistor.

Abstract: A method of manufacturing a semiconductor device is disclosed. A p-type substrate is doped to form an N-well in a selected portion of a p-type substrate adjacent an anode region of the substrate. A p-type doped region is formed in the anode region of the p-type substrate. The p-type doped region and the N-well form a p-n junction.

Abstract: A method of manufacturing a semiconductor device is disclosed. A p-type substrate is doped to form an N-well in a selected portion of a p-type substrate adjacent an anode region of the substrate. A p-type doped region is formed in the anode region of the p-type substrate. The p-type doped region and the N-well form a p-n junction.

Abstract: A method for forming a semiconductor device includes forming gate stacks on a crystalline semiconductor layer; depositing a spacer layer over a top and sidewalls of the gate stacks; recessing the semiconductor layer between the gates stacks; and depositing a non-conformal layer over the gates stacks and within the recesses such that the non-conformal layer forms a pinch point over the recesses. The non-conformal layer is etched at a bottom of the recesses through the pinch point to expose the semiconductor layer. Dopant species are implanted at the bottom of the recesses through the pinch point in the semiconductor layer. The non-conformal layer is stripped, and source and drain material is grown in the recesses. The dopant species are activated to form PN junctions to act as a junction butt between portions of the semiconductor layer.