Patents by Inventor Gandrothula Srinlvas

Gandrothula Srinlvas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240079856
    Abstract: A method for fabricating a quality and manufacturable aperture for light emitting elements, such as vertical cavity surface emitting lasers (VCSELs), using epitaxial later overgrowth (ELO). A bar comprised of island-like III-nitride semiconductor layers is grown on a substrate using a growth restrict mask, and the island-like III-nitride semiconductor layers are fabricated into light-emitting resonating cavities across a smallest length of the bar. Apertures for the resonating cavities are also fabricated along the smallest length of the bar on wing regions of the epitaxial lateral overgrowth. Distributed Bragg reflectors (DBRs) are fabricated as mirrors for the resonant cavities on the bottom and top of the wing regions of the epitaxial lateral overgrowth.
    Type: Application
    Filed: October 23, 2020
    Publication date: March 7, 2024
    Applicant: The Regents of the University of California
    Inventors: Gandrothula Srinlvas, Takeshi Kamikawa, Masahiro Araki