Abstract: Methods for polishing bulk silicon are disclosed. In one aspect, mechanical polishing is facilitated by cyclically alternating between a silicon reactive slurry and deionized water while a mechanical polishing head operates on a surface. In exemplary aspects, the polishing head is polishing a bulk silicon carrier wafer to expose a backside of a radio frequency (RF) complementary metal oxide semiconductor (CMOS) switch, although other semiconductors may also benefit from exemplary aspects of the present disclosure. While the silicon slurry is present, a reaction between the bulk silicon and the slurry takes place allowing the polishing head to remove the bulk silicon. The deionized water interrupts this reaction and helps prevent overpolishing which might otherwise damage the device.

Abstract: The present disclosure relates to a fabricating procedure of a radio frequency device, in which a precursor wafer including active layers, SiGe layers, and a silicon handle substrate is firstly provided. Each active layer is formed from doped epitaxial silicon and underneath a corresponding SiGe layer. The silicon handle substrate is over each SiGe layer. Next, the silicon handle substrate is removed completely, and the SiGe layer is removed completely. An etch passivation film is then formed over each active layer. Herein, removing each SiGe layer and forming the etch passivation film over each active layer utilizes a same reactive chemistry combination, which reacts differently to the SiGe layer and the active layer. The reactive chemistry combination is capable of producing a variable performance, which is an etching performance of the SiGe layer or a forming performance of the etch passivation film over the active layer.

Abstract: The present disclosure relates to a fabricating procedure of a radio frequency device, in which a precursor wafer including active layers, SiGe layers, and a silicon handle substrate is firstly provided. Each active layer is formed from doped epitaxial silicon and underneath a corresponding SiGe layer. The silicon handle substrate is over each SiGe layer. Next, the silicon handle substrate is removed completely, and the SiGe layer is removed completely. An etch passivation film is then formed over each active layer. Herein, removing each SiGe layer and forming the etch passivation film over each active layer utilize a same reactive chemistry combination, which reacts differently to the SiGe layer and the active layer. The reactive chemistry combination is capable of producing a variable performance, which is an etching performance of the SiGe layer or a forming performance of the etch passivation film over the active layer.

Abstract: A method of manufacturing a semiconductor device includes performing one or more grinding processes on a backside surface of a device wafer to thin the device wafer from a first thickness to a second thickness. A first chemical mechanical polish (CMP) process is performed on the backside surface of the device wafer to thin the device wafer from the second thickness to a third thickness. A second CMP process is performed on the backside surface of the device wafer to selectively remove device wafer material that is disposed over an active device area of the semiconductor device, where a removal rate of the device wafer material is a function of depth.

Abstract: The present disclosure relates to a fabricating procedure of a radio frequency device, in which a precursor wafer including active layers, SiGe layers, and a silicon handle substrate is firstly provided. Each active layer is formed from doped epitaxial silicon and underneath a corresponding SiGe layer. The silicon handle substrate is over each SiGe layer. Next, the silicon handle substrate is removed completely, and the SiGe layer is removed completely. An etch passivation film is then formed over each active layer. Herein, removing each SiGe layer and forming the etch passivation film over each active layer utilize a same reactive chemistry combination, which reacts differently to the SiGe layer and the active layer. The reactive chemistry combination is capable of producing a variable performance, which is an etching performance of the SiGe layer or a forming performance of the etch passivation film over the active layer.

Abstract: A method and system for dynamic inventory control of a warehouse is provided that includes, receiving consumption data for a product, standardizing the consumption data to provide a data record, at least one of populating or appending a data table with at least a portion of the data in the standardized data record, wherein the data table includes a plurality of time dependent data values, calculating a flow dynamics vector for the first time t using the data values in the data table, receiving the flow dynamics vector and generating a figurative state-space diagram that is divided into a plurality of zones by a plurality of threshold values related to the product, and evaluating the flow dynamics vector in the context of the thresholds to identify the zone indicated by the flow dynamics vector.

Abstract: Various exemplary embodiments relate to a method and related network node including one or more of the following: determining first server dynamics associated with a first server instance, wherein the first server dynamics are indicative of a current performance of the first server instance; determining second server dynamics associated with a second server instance, wherein the second server dynamics are indicative of a current performance of the second server instance; determining, based on the first server dynamics, a current operating mode of the first server instance; determining, based on the second server dynamics, a current operating mode of the second server instance; scaling up with respect to the first server instance based on the first current operating mode indicating that the server instance is oversaturated; and scaling down with respect to the second server instance based on the second current operating mode indicating that the server instance is undersaturated.

Abstract: Various exemplary embodiments relate to a method and related network node including one or more of the following: determining first server dynamics associated with a first server instance, wherein the first server dynamics are indicative of a current performance of the first server instance; determining second server dynamics associated with a second server instance, wherein the second server dynamics are indicative of a current performance of the second server instance; determining, based on the first server dynamics, a current operating mode of the first server instance; determining, based on the second server dynamics, a current operating mode of the second server instance; scaling up with respect to the first server instance based on the first current operating mode indicating that the server instance is oversaturated; and scaling down with respect to the second server instance based on the second current operating mode indicating that the server instance is undersaturated.

Abstract: A method of forming and refilling a trench in a substrate. First a trench is formed in the substrate. The trench is then refilled with a conformal material. Next, a recess is etched into the top portion of the refilled trench. The recess is then refilled with a second material until the refilled recess and substrate are substantially planar.