Patents by Inventor Ganesh Hedge

Ganesh Hedge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Relaxed semiconductor layers with reduced defects and methods of forming the same
    Patent number: 9773906
    Abstract: Methods of forming a layer of silicon germanium include forming an epitaxial layer of Si1-xGex on a silicon substrate, wherein the epitaxial layer of Si1-xGex has a thickness that is less than a critical thickness, hc, at which threading dislocations form in Si1-xGex on silicon; etching the epitaxial layer of Si1-xGex to form Si1-xGex pillars that define a trench in the epitaxial layer of Si1-xGex, wherein the trench has a height and a width, wherein the trench has an aspect ratio of height to width of at least 1.5; and epitaxially growing a suspended layer of Si1-xGex from upper portions of the Si1-xGex pillars, wherein the suspended layer defines an air gap in the trench beneath the suspended layer of Si1-xGex.
    Type: Grant
    Filed: January 20, 2016
    Date of Patent: September 26, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Wei-E Wang, Mark S. Rodder, Ganesh Hedge, Christopher Bowen
  • Relaxed Semiconductor Layers With Reduced Defects and Methods of Forming the Same
    Publication number: 20160322493
    Abstract: Methods of forming a layer of silicon germanium include forming an epitaxial layer of Si1-xGex on a silicon substrate, wherein the epitaxial layer of Si1-xGex has a thickness that is less than a critical thickness, hc, at which threading dislocations form in Si1-xGex on silicon; etching the epitaxial layer of Si1-xGex to form Si1-xGex pillars that define a trench in the epitaxial layer of Si1-xGex, wherein the trench has a height and a width, wherein the trench has an aspect ratio of height to width of at least 1.5; and epitaxially growing a suspended layer of Si1-xGex from upper portions of the Si1-xGex pillars, wherein the suspended layer defines an air gap in the trench beneath the suspended layer of Si1-xGex.
    Type: Application
    Filed: January 20, 2016
    Publication date: November 3, 2016
    Inventors: Wei-E Wang, Mark S. Rodder, Ganesh Hedge, Christopher Bowen