Patents by Inventor Ganesh M. Sundaram
Ganesh M. Sundaram has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9783888Abstract: An ALD coating method to provide a coating surface on a substrate is provided. The ALD coating method comprises: providing a deposition heading including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly; emitting a first precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; emitting a second precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; removing moving the substrate under the deposition head such that the first precursor is directed onto a first area of the coating surface prior to the second precursor being directed onto the first area of the coating surface.Type: GrantFiled: December 2, 2015Date of Patent: October 10, 2017Assignee: Ultratech, Inc.Inventors: Michael J. Sershen, Ganesh M. Sundaram, Roger R. Coutu, Jill Svenja Becker, Mark J. Dalberth
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Patent number: 9777371Abstract: A gas deposition system (1000) configured as a dual-chamber “tower” includes a frame (1140) for supporting two reaction chamber assemblies (3000), one vertically above the other. Each chamber assembly (3000) includes an outer wall assembly surrounding a hollow chamber (3070) sized to receive a single generation 4.5 (GEN 4.5) glass plate substrate through a load port. The substrate is disposed horizontally inside the hollow chamber (3070) and the chamber assembly (3000) includes removable and cleanable triangular shaped input (3150) and output (3250) plenums disposed external to the hollow chamber (3070) and configured to produce substantially horizontally directed laminar gas flow over a top surface of the substrate. Each chamber includes a cleanable and removable chamber liner assembly (6000) disposed inside the hollow chamber (3070) to contain precursor gases therein thereby preventing contamination of chamber outer walls (3010, 3020, 3030, 3040).Type: GrantFiled: February 26, 2010Date of Patent: October 3, 2017Assignee: Ultratech, Inc.Inventors: Roger R. Coutu, Jill Svenja Becker, Ganesh M. Sundaram, Eric W. Deguns
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Patent number: 9567670Abstract: An ALD coating method to provide a coating surface on a substrate is provided. The ALD coating method comprises: providing a deposition heading including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly; emitting a first precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; emitting a second precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; removing moving the substrate under the deposition head such that the first precursor is directed onto a first area of the coating surface prior to the second precursor being directed onto the first area of the coating surface.Type: GrantFiled: December 29, 2014Date of Patent: February 14, 2017Assignee: Ultratech, Inc.Inventors: Michael J. Sershen, Ganesh M. Sundaram, Roger R. Coutu, Jill Svenja Becker, Mark J. Dalberth
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Publication number: 20160115596Abstract: An ALD coating method to provide a coating surface on a substrate is provided. The ALD coating method comprises: providing a deposition heading including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly; emitting a first precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; emitting a second precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; removing moving the substrate under the deposition head such that the first precursor is directed onto a first area of the coating surface prior to the second precursor being directed onto the first area of the coating surface.Type: ApplicationFiled: December 2, 2015Publication date: April 28, 2016Applicant: Ultratech, Inc.Inventors: Michael J. Sershen, Ganesh M. Sundaram, Roger R. Coutu, Jill Svenja Becker, Mark J. Dalberth
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Publication number: 20150275363Abstract: An ALD coating method to provide a coating surface on a substrate is provided. The ALD coating method comprises: providing a deposition heading including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly; emitting a first precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; emitting a second precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; removing moving the substrate under the deposition head such that the first precursor is directed onto a first area of the coating surface prior to the second precursor being directed onto the first area of the coating surface.Type: ApplicationFiled: December 29, 2014Publication date: October 1, 2015Inventors: Michael J. Sershen, Ganesh M. Sundaram, Roger R. Coutu, Jill Svenja Becker, Mark J. Dalberth
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Publication number: 20120141676Abstract: An ALD coating system (100) includes a fixed gas manifold (710, 1300) disposed over a moving substrate with a coating surface of the substrate facing precursor orifice plate (930). A gas control system (1400) delivers gas or vapor precursors and inert gas into the fixed gas manifold which directs input gases onto a coating surface of the moving substrate. The gas control system includes a blower (1485) interfaced with the gas manifold which draws gas through the gas manifold to remove unused precursors, inert gas and reaction byproduct from the coating surface. The gas manifold is configured segregate precursor gases at the coating surface to prevent the mixing of dissimilar precursors. The gas manifold may also segregate unused precursor gases in the exhaust system so that the unused precursors can be recovered and reused.Type: ApplicationFiled: October 14, 2011Publication date: June 7, 2012Applicant: Cambridge NanoTech IncInventors: Michael J. Sershen, Ganesh M. Sundaram, Roger R. Coutu, Jill Svenja Becker, Mark J. Dalberth
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Publication number: 20120064245Abstract: A gas deposition system (1000) configured as a dual-chamber “tower” includes a frame (1140) for supporting two reaction chamber assemblies (3000), one vertically above the other. Each chamber assembly (3000) includes an outer wall assembly surrounding a hollow chamber (3070) sized to receive a single generation 4.5 (GEN 4.5) glass plate substrate through a load port. The substrate is disposed horizontally inside the hollow chamber (3070) and the chamber assembly (3000) includes removable and cleanable triangular shaped input (3150) and output (3250) plenums disposed external to the hollow chamber (3070) and configured to produce substantially horizontally directed laminar gas flow over a top surface of the substrate. Each chamber includes a cleanable and removable chamber liner assembly (6000) disposed inside the hollow chamber (3070) to contain precursor gases therein thereby preventing contamination of chamber outer walls (3010, 3020, 3030, 3040).Type: ApplicationFiled: February 26, 2010Publication date: March 15, 2012Applicant: Cambridge NanoTech Inc.Inventors: Roger R. Coutu, Jill Svenja Becker, Ganesh M. Sundaram, Eric W. Deguns
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Publication number: 20110311726Abstract: An improved precursor vaporization device and method for vaporizing liquid and solid precursors having a low vapor pressure at a desired precursor temperature includes elements and operating methods for injecting an inert gas boost pulse into a precursor container prior to releasing a precursor pulse to a reaction chamber. An improved ALD system and method for growing thin films having more thickness and thickness uniformity at lower precursor temperatures includes devices and operating methods for injecting an inert gas boost pulse into a precursor container prior to releasing a precursor pulse to a reaction chamber and for releasing a plurality of first precursor pulses into a reaction chamber to react with substrates before releasing a different second precursor pulse into the reaction chamber to react with the substrates.Type: ApplicationFiled: June 17, 2011Publication date: December 22, 2011Applicant: Cambridge NanoTech Inc.Inventors: Guo Liu, Adam Bertuch, Eric W. Deguns, Mark J. Dalberth, Ganesh M. Sundaram, Jill Svenja Becker