Abstract: An image capture method for flash photography includes: capturing at least one first image while a strobe device is operating under a first strobe intensity setting for emitting main flash, capturing at least one second image while the strobe device is operating under a second strobe intensity setting different from the first strobe intensity setting, and generating an output image by blending the at least one first image and the at least one second image.

Abstract: A VCSEL device includes an N-type metal substrate and laser-emitting units on the N-type metal substrate. Each laser-emitting unit includes an N-type contact layer in contact with the N-type metal substrate; an N-type Bragg reflector layer in contact with the N-type contact layer; a P-type Bragg reflector layer above the N-type Bragg reflector layer; an active emitter layer between the P-type Bragg reflector layer and the N-type Bragg reflector layer; a current restriction layer between the active emitter layer and the P-type Bragg reflector layer; a P-type contact layer in contact with the P-type Bragg reflector layer; and an insulation sidewall surrounding all edges of the N-type and P-type Bragg reflector layers, the N-type and P-type contact layers, the active emitter layer and the current restriction layer. A P-type metal substrate has through holes each aligned with a current restriction hole of a corresponding laser-emitting unit.

Abstract: An image capture method for flash photography includes: capturing at least one first image while a strobe device is operating under a first strobe intensity setting for emitting main flash, capturing at least one second image while the strobe device is operating under a second strobe intensity setting different from the first strobe intensity setting, and generating an output image by blending the at least one first image and the at least one second image.

Abstract: A VCSEL device includes an N-type metal substrate and laser-emitting units on the N-type metal substrate. Each laser-emitting unit includes an N-type contact layer in contact with the N-type metal substrate; an N-type Bragg reflector layer in contact with the N-type contact layer; a P-type Bragg reflector layer above the N-type Bragg reflector layer; an active emitter layer between the P-type Bragg reflector layer and the N-type Bragg reflector layer; a current restriction layer between the active emitter layer and the P-type Bragg reflector layer; a P-type contact layer in contact with the P-type Bragg reflector layer; and an insulation sidewall surrounding all edges of the N-type and P-type Bragg reflector layers, the N-type and P-type contact layers, the active emitter layer and the current restriction layer. A P-type metal substrate has through holes each aligned with a current restriction hole of a corresponding laser-emitting unit.

Abstract: A VCSEL device includes a semiconductor substrate; a current conductive layer on the semiconductor substrate; a N-type Bragg reflector layer in contact with the current conductive layer; a P-type Bragg reflector layer above the N-type Bragg reflector layer; an active emitter layer; a current restriction layer, wherein the current restriction layer has a current restriction hole; a metal layer in contact with the semiconductor substrate, the metal layer has a through hole aligned with the current restriction hole; a P-type bonding pad in ohmic contact with the P-type Bragg reflector layer, and a portion of the P-type bonding pad is aligned with the current restriction hole and the through hole; and a N-type bonding pad in ohmic contact with the current conductive layer, and electrically separated from the P-type bonding pad. The P-type bonding pad and the N-type bonding pad are at a same side of the semiconductor substrate.