Abstract: A process is described for fabricating an active addressing component such as a metal-insulator-metal (MIM) device by creating surface relief levels to form trenches, and depositing a metal in the trenches. The metal is anodized to create a non-linear dielectric. A second metal is deposited in the trenches to create an electrical with the dielectric which a contact is provided, and transferring the MIM device to a substrate by adhesive transfer.

Abstract: One exemplary embodiment of the present disclosure includes a solution-processed thin film transistor having a number of a number of conductive solution-processed thin film contacts, semiconductor solution-processed thin film active regions, and dielectric solution-processed thin film isolations formed in a sequence and organization to form a solution-processed thin film structure. One or more of the semiconductor solution-processed thin film active regions and the dielectric solution-processed thin film isolations have been selectively ablated.

Abstract: A process is described for fabricating an active addressing component such as a metal-insulator-metal (MIM) device by creating surface relief levels to form trenches, and depositing a metal in the trenches. The metal is anodized to create a non-linear dielectric. A second metal is deposited in the trenches to create an electrical with the dielectric which a contact is provided, and transferring the MIM device to a substrate by adhesive transfer.

Abstract: A process is described for fabricating an active addressing component such as a metal-insulator-metal (MIM) device by creating surface relief levels to form trenches, and depositing a metal in the trenches. The metal is anodized to create a non-linear dielectric. A second metal is deposited in the trenches to create an electrical with the dielectric which a contact is provided, and transferring the MIM device to a substrate by adhesive transfer.

Abstract: An exemplary solution-processed thin film transistor formation method of the invention forms conductive solution-processed thin film material contacts, semiconductor solution-processed thin film material active regions, and dielectric solution-processed thin film material isolations in a sequence and organization to form a solution-processed thin film structure capable of transistor operation. During or after the formation of the transistor structure, laser ablation is applied to one or more of the conductive solution-processed thin film material contacts, the semiconductor solution-processed thin film material active regions and the dielectric solution-processed thin film material isolations to pattern or complete patterning of a material being selectively ablated.

Abstract: An exemplary solution-processed thin film transistor formation method of the invention forms solution-processed thin film layers into a transistor structure. During formation, semiconductor portions of the transistor structure are selectively heated via a laser to modify the material state of semiconductor material from a solution deposited material state to a thin film layer material state.

Abstract: An exemplary solution-processed thin film transistor formation method of the invention forms solution-processed thin film layers into a transistor structure. During formation, semiconductor portions of the transistor structure are selectively heated via a laser to modify the material state of semiconductor material from a solution deposited material state to a thin film layer material state.

Abstract: An exemplary solution-processed thin film transistor formation method of the invention forms conductive solution-processed thin film material contacts, semiconductor solution-processed thin film material active regions, and dielectric solution-processed thin film material isolations in a sequence and organization to form a solution-processed thin film structure capable of transistor operation. During or after the formation of the transistor structure, laser ablation is applied to one or more of the conductive solution-processed thin film material contacts, the semiconductor solution-processed thin film material active regions and the dielectric solution-processed thin film material isolations to pattern or complete patterning of a material being selectively ablated.

Abstract: A method of conveying information from an electronic identification label to an interrogator includes coupling energy from an external field into a resonant circuit of the electronic identification label. The method also includes the electronic identification label periodically storing and discharging an amount of the coupled energy wherein the period that the electronic identification label stores and discharges the energy conveys information about the electronic identification label to the interrogator.

Abstract: The invention concerns pointer tracking using a signal possessing an optical characteristic that is separately detectable from a projected display. An area of the projected display is sensed. Sensing is conducted with filtering for the separately detected optical characteristic.

Abstract: A method of controlling a display system includes projecting an image onto a surface, projecting a control beam onto the surface, tracing an interpretable pattern with the control beam, detecting the interpretable pattern, and correlating the interpretable pattern with a predefined command.