Abstract: A device includes an output circuit configured to drive a gate of a field effect transistor (FET) in response to a drive signal. The FET includes a body diode. Control logic is configured to generate the drive signal to control the output circuit to drive the FET. A measurement circuit is configured to sample a first voltage across the FET in response to a first state of the drive signal and configured to sample a second voltage across the FET in response to a second state of the drive signal. The second state of the drive signal is different from the first state. The control logic is configured to determine a difference between the first voltage and a reference voltage. The control logic is configured to compare the difference to a degradation threshold to determine a level of degradation of the FET. The reference voltage is determined based on the second voltage.

Abstract: Methods, apparatus, systems and articles of manufacture are described for transistor health monitoring. An example gate driver includes a request receiver pin, a measurement transmitter pin, and a driver control logic pin, the request receiver pin, the measurement transmitter pin, and the driver control logic pin configured to be coupled to a controller, a sensing pin, the sensing pin to be coupled to a sensing circuit, a control logic circuit having an input coupled to the request receiver pin, a transistor coupled to the control logic circuit and the sensing pin, a multiplexer coupled to the control logic circuit and the sensing pin, an analog-to-digital converter (ADC) coupled to the multiplexer and the measurement transmitter pin, and a driver control logic circuit coupled to the driver control logic pin.

Abstract: Methods, apparatus, systems and articles of manufacture are described for transistor health monitoring. An example gate driver includes a request receiver pin, a measurement transmitter pin, and a driver control logic pin, the request receiver pin, the measurement transmitter pin, and the driver control logic pin configured to be coupled to a controller, a sensing pin, the sensing pin to be coupled to a sensing circuit, a control logic circuit having an input coupled to the request receiver pin, a transistor coupled to the control logic circuit and the sensing pin, a multiplexer coupled to the control logic circuit and the sensing pin, an analog-to-digital converter (ADC) coupled to the multiplexer and the measurement transmitter pin, and a driver control logic circuit coupled to the driver control logic pin.

Abstract: A device includes an output circuit configured to drive a gate of a field effect transistor (FET) in response to a drive signal. The FET includes a body diode. Control logic is configured to generate the drive signal to control the output circuit to drive the FET. A measurement circuit is configured to sample a first voltage across the FET in response to a first state of the drive signal and configured to sample a second voltage across the FET in response to a second state of the drive signal. The second state of the drive signal is different from the first state. The control logic is configured to determine a difference between the first voltage and a reference voltage. The control logic is configured to compare the difference to a degradation threshold to determine a level of degradation of the FET. The reference voltage is determined based on the second voltage.