Patents by Inventor Gangyi Chen

Gangyi Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • III-nitride light emitting device with double heterostructure light emitting region
    Patent number: 7880186
    Abstract: In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm?3 and 5×1019 cm?3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6×1018 cm?3.
    Type: Grant
    Filed: March 5, 2007
    Date of Patent: February 1, 2011
    Assignees: Koninklijke Phllips Electronics N.V., Phillips Lumileds Lighting Company, LLC
    Inventors: Nathan F. Gardner, Gangyi Chen, Werner K. Goetz, Michael R. Krames, Gerd O. Mueller, Yu-Chen Shen, Satoshi Watanabe
  • III-Nitride Light Emitting Device with Double Heterostructure Light Emitting Region
    Publication number: 20070145384
    Abstract: In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm3 and 5×1019 cm?3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6×1018 cm?3.
    Type: Application
    Filed: March 5, 2007
    Publication date: June 28, 2007
    Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLC
    Inventors: Nathan Gardner, Gangyi Chen, Werner Goetz, Michael Krames, Gerd Mueller, Yu-Chen Shen, Satoshi Watanabe