Abstract: A method for manufacturing a photovoltaic module with edge protection comprising: a) providing a transparent module substrate comprising a thin film solar module on a first surface of the transparent module substrate, b) applying at least two side busbars to the thin film solar module, c) placing a first encapsulation foil onto the thin film solar module, d) placing a transparent back substrate onto the first encapsulation foil, e) placing a second encapsulation foil onto a second surface of the transparent module substrate, f) placing a transparent front substrate onto the second encapsulation foil, g) laminating a substrate stack, h) placing a pressure mould over the edge of the substrate stack, i) injecting an edge protection mass into the pressure mould, and j) moving the pressure mould along the edges of the substrate stack to form a circumferential edge protection, as well as a photovoltaic module comprising an edge protection.

Abstract: The invention refers to a method for activating an absorber layer of a semi-finished thin-film solar cell. The absorber layer comprises CdSexTe1-x, CdSe, CdS or CdTe. The method comprises the steps of providing a semi-finished thin-film solar cell with an absorber layer comprising a CdSexTe1-x, layer or comprising at least two layers selected from CdS, CdTe, ZnTe, CdSe, forming a polyvinylchloride film on a surface of the absorber layer, and performing a heat treatment of the semi-finished thin-film solar cell with the polyvinylchloride film on it, wherein the temperature is in the range of 300° C. to 500° C.

Abstract: The present invention proposes a method to form a double-graded CdSeTe thin film. The method comprises providing a base substrate, forming a first CdSewTe1-w layer having a first amount w1 of selenium in it, forming a second CdSewTe1-w layer having a second amount w2 of selenium in it and forming a third CdSewTe1-w layer having a third amount w3 of selenium in it. The second amount w2 lies in the range between 0.25 and 0.4, whereas each of the amounts w1 and w3 lies in the range extending from 0 to 1. According to the present invention, the energy gap in the first and the third CdSewTe1-w layers is equal to or higher than 1.45 eV and the energy gap in the second CdSewTe1-w layer lies in the range between 1.38 eV and 1.45 eV and is smaller than the energy gap in the first and the third CdSewTe1-w layers.

Abstract: The present invention relates to a method and an apparatus for determining the position of a substrate within a closed chamber, wherein the substrate is moved within the chamber by a transport system comprising at least one rotating shaft. A load-converting element is provided adjacent to at least one of the rotating shafts, wherein the load-converting element detects a load acting on the at least one rotating shaft and converts it into an electrical parameter. While no substrate is present on the at least one rotating shaft, a first output signal corresponding to a first value of the electrical parameter is measured. The output signal is then monitored and a presence of the substrate on the at least one rotating shaft is detected when the output signal differs from the first output signal by at least a predetermined amount.

Abstract: Object of the invention is to provide a new thin film device comprising at least one thin film cell, wherein the thin film cell comprises a first electrode, a photoactive layer and a second electrode, wherein the photoactive layer is arranged between the first and the second electrode, wherein at least one additional conductive line is arranged within an active area of the thin film cell and included in the photoactive layer and electrically interconnected with the first electrode and electrically insulated from the second electrode. Furthermore, the invention provides a method of forming a thin film device comprising at least one thin film cell, wherein the thin film cell comprises a first electrode, a photoactive layer and a second electrode and the photoactive layer is arranged between the first and the second electrode.

Abstract: The subject of this invention is a method for testing the data and control interface of individual machines intended for interconnection in an inline system for solar cell production. Furthermore, an Interface-Tester suitable for executing the testing method is disclosed. The method for testing comprises the steps of feeding a dummy workpiece to the tested machine and connecting the interface tester to the standard interface of the machine. Consecutively the interface tester sends controlling signals to the machine and receives the signals from the tested machine. The received signals are compared to reference signals and evaluated. The interface tester comprises a standard interface for coupling the machines in an inline system for solar cell production. Furthermore, the interface tester is equipped with at least one CPU, a volatile and/or non-volatile memory, communication modules, couplers and connectors and at least one human-machine interface.

Abstract: The subject of this invention is a method for testing the data and control interface of individual machines intended for interconnection in an inline system for solar cell production. Furthermore, an Interface-Tester suitable for executing the testing method is disclosed. The method for testing comprises the steps of feeding a dummy workpiece to the tested machine and connecting the interface tester to the standard interface of the machine. Consecutively the interface tester sends controlling signals to the machine and receives the signals from the tested machine. The received signals are compared to reference signals and evaluated. The interface tester comprises a standard interface for coupling the machines in an inline system for solar cell production. Furthermore, the interface tester is equipped with at least one CPU, a volatile and/or non-volatile memory, communication modules, couplers and connectors and at least one human-machine interface.

Abstract: The present invention proposes a method to form a CdSeTe thin film with a defined amount of selenium and with a high quality. The method comprises the steps of providing a base substrate and of depositing a partial CdSeTe layer on a first portion of the base substrate. The step of depositing a partial CdSeTe layer is performed at least twice, wherein a predetermined time period without deposition of a partial CdSeTe layer on the first portion of the base substrate is provided between two subsequent steps of depositing a partial CdSeTe layer. The temperature of the base substrate and the CdSeTe layer already deposited on the first portion of the base substrate is controlled during the predetermined time period such that re-evaporation of Cd and/or Te from the CdSeTe layer already deposited takes place.

Abstract: The present invention proposes a method to form a CdSeTe thin film with a defined amount of selenium and with a high quality. The method comprises the steps of providing a base substrate and of depositing a partial CdSeTe layer on a first portion of the base substrate. The step of depositing a partial CdSeTe layer is performed at least twice, wherein a predetermined time period without deposition of a partial CdSeTe layer on the first portion of the base substrate is provided between two subsequent steps of depositing a partial CdSeTe layer. The temperature of the base substrate and the CdSeTe layer already deposited on the first portion of the base substrate is controlled during the predetermined time period such that re-evaporation of Cd and/or Te from the CdSeTe layer already deposited takes place.

Abstract: The present invention proposes a method to form a double-graded CdSeTe thin film. The method comprises providing a base substrate, forming a first CdSewTe1-w layer having a first amount w1 of selenium in it, forming a second CdSewTe1-w layer having a second amount w2 of selenium in it and forming a third CdSewTe1-w layer having a third amount w3 of selenium in it. The second amount w2 lies in the range between 0.25 and 0.4, whereas each of the amounts w1 and w3 lies in the range extending from 0 to 1. According to the present invention, the energy gap in the first and the third CdSewTe1-w layers is equal to or higher than 1.45 eV and the energy gap in the second CdSewTe1-w layer lies in the range between 1.38 eV and 1.45 eV and is smaller than the energy gap in the first and the third CdSewTe1-w layers.

Abstract: The present invention relates to a method and an apparatus for determining the position of a substrate within a closed chamber, wherein the substrate is moved within the chamber by a transport system comprising at least one rotating shaft. A load-converting element is provided adjacent to at least one of the rotating shafts, wherein the load-converting element detects a load acting on the at least one rotating shaft and converts it into an electrical parameter. While no substrate is present on the at least one rotating shaft, a first output signal corresponding to a first value of the electrical parameter is measured. The output signal is then monitored and a presence of the substrate on the at least one rotating shaft is detected when the output signal differs from the first output signal by at least a predetermined amount.

Abstract: Object of the invention is to provide a new thin film device comprising at least one thin film cell, wherein the thin film cell comprises a first electrode, a photoactive layer and a second electrode, wherein the photoactive layer is arranged between the first and the second electrode, wherein at least one additional conductive line is arranged within an active area of the thin film cell and included in the photoactive layer and electrically interconnected with the first electrode and electrically insulated from the second electrode. Furthermore, the invention provides a method of forming a thin film device comprising at least one thin film cell, wherein the thin film cell comprises a first electrode, a photoactive layer and a second electrode and the photoactive layer is arranged between the first and the second electrode.