Patents by Inventor Gao-Chao Lai

Gao-Chao Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7368657
    Abstract: A paste composition for forming an electrically conductive layer on a p-type silicon semiconductor substrate comprises aluminum powder, an organic vehicle and powder of at least one inorganic compound selected from a group consisting of an oxide-based inorganic compound and a non-oxide-based inorganic compound. The oxide-based inorganic compound has a thermal expansion coefficient smaller than the thermal expansion coefficient of aluminum and a melting temperature, a softening temperature and a decomposition temperature each higher than the melting point of aluminum. The non-oxide-based inorganic compound has a thermal expansion coefficient smaller than the thermal expansion coefficient of aluminum and at least one of a melting temperature, a softening temperature or a decomposition temperature higher than the melting point of aluminum.
    Type: Grant
    Filed: July 2, 2003
    Date of Patent: May 6, 2008
    Assignees: Toyo Aluminium Kabushiki Kaisha, Sharp Kabushiki Kaisha
    Inventors: Takashi Watsuji, Gao-Chao Lai, Tomohiro Machida, Satoshi Tanaka, Masaomi Hioki
  • Publication number: 20040003836
    Abstract: A paste composition for forming an electrically conductive layer on a p-type silicon semiconductor substrate comprises aluminum powder, an organic vehicle and powder of at least one inorganic compound selected from a group consisting of an oxide-based inorganic compound and a non-oxide-based inorganic compound. The oxide-based inorganic compound has a thermal expansion coefficient smaller than the thermal expansion coefficient of aluminum and a melting temperature, a softening temperature and a decomposition temperature each higher than the melting point of aluminum. The non-oxide-based inorganic compound has a thermal expansion coefficient smaller than the thermal expansion coefficient of aluminum and at least one of a melting temperature, a softening temperature or a decomposition temperature higher than the melting point of aluminum.
    Type: Application
    Filed: July 2, 2003
    Publication date: January 8, 2004
    Inventors: Takashi Watsuji, Gao-Chao Lai, Tomohiro Machida, Satoshi Tanaka, Masaomi Hioki