Abstract: A sun visor system includes multiple visors to provide selective window coverage for glare. This system can be employed on the driver side, passenger side, or both. The second visor (50), having pivotal device (56) on support rod (54), can be easily connected to the first visor (20) support rod (24) to provide pivotal movements between the windshield and side window. These visors, first and second, can be moved together or separately to stored positions, windshield and side window blocked positions, or combinations of both positions to provide window protection from glare quickly and easily for windshield, side window, or both. Also support rod of the visor can be made of flexible material, like gooseneck arm, to further provide flexible adjustments of visor to desired positions to block glare from different angles or positions of vehicle window. This adjustable visor system can be applied to a single sun visor system or multiple visors system.

Abstract: The invention provides a method and system for fault-tolerant communication. It utilizes three wide area networks, including the cell phone network, the internet and the telephone network (PSTN). The method and system monitors the wide-area networks and sends warning messages if they cannot be accessed from a local site. Primary failure conditions relate to the access and use of the three wide-area networks. Secondary failure conditions include power outages. The possible fault conditions include: ‘telephone out’, ‘internet out’, ‘wireless radio out’, ‘power out’. If these failure conditions are detected, the method and system alerts the user and redirects voice, text message, and data traffic via a detour over a different wide-area network in order to avoid that failure. A method and system has been disclosed that routs information over one of multiple networks in a fault-tolerant manner.

Abstract: An active fuse includes an active fuse geometry (120) that is used to form both a variable resistor (106) and a select transistor (110). In one embodiment, the active fuse geometry is formed in a portion of an active region (160) of a semiconductor substrate (140), and a select gate (124) is disposed over an end portion (123) of the active fuse geometry to form an integral select transistor (110) for use in programming the active fuse. The use of a shared active fuse geometry within the active region allows for reduced area requirements and improved sensing margins.

Abstract: An active fuse includes an active fuse geometry (120) that is used to form both a variable resistor (106) and a select transistor (110). In one embodiment, the active fuse geometry is formed in a portion of an active region (160) of a semiconductor substrate (140), and a select gate (124) is disposed over an end portion (123) of the active fuse geometry to form an integral select transistor (110) for use in programming the active fuse. The use of a shared active fuse geometry within the active region allows for reduced area requirements and improved sensing margins.

Abstract: A method of forming a stacked capacitor structure in a semiconductor device, having metal electrode plates. After depositing the bottom electrode layer (26) and the dielectric layer (28) of the capacitor, a rough patterning step is carried out to roughly pattern or shape the bottom electrode layer and the dielectric layer, and to expose the underlying interlayer dielectric (18). A top electrode layer (32) is then blanket deposited, and another, more precise etching step is carried out to form the final shape of the capacitor element, while leaving behind a portion of the top electrode layer on the interlayer dielectric, which forms a metal interconnect (36). In one embodiment, the electrode layers are comprised of materials having a conductivity greater than doped silicon (either poly or monocrystalline), such as a metal.