Abstract: A carbon nanotube composite structure includes a carbon nanotube and a film-like structure. The carbon nanotube includes a p-type portion and an n-type portion. The film-like structure is a molybdenum disulfide film or a tungsten disulfide film, and the film-like structure covers the n-type portion.

Abstract: A thin film transistor includes a gate electrode, a gate insulating layer, a carbon nanotube structure, a source electrode and a drain electrode. The gate insulating layer is located on the gate electrode. The carbon nanotube structure is located on the gate insulating layer. The source electrode and the drain electrode are arranged at intervals and electrically connected to the carbon nanotube structure respectively. The thin film transistor further includes an interface charge layer, and the interface charge layer is located between the carbon nanotube structure and the gate insulating layer.

Abstract: A method of n-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a film-like structure, wherein the film-like structure is a molybdenum disulfide film or a tungsten disulfide film; and converting at least one portion of the carbon nanotube from a p-type to an n-type by covering the carbon nanotube with the film-like structure.

Abstract: A method of p-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a layered structure, wherein the layered structure is a tungsten diselenide film or a black phosphorus film; and p-type doping at least one portion of the carbon nanotube by covering the carbon nanotube with the layered structure.

Abstract: A thin film transistor includes a gate electrode, a gate insulating layer, a carbon nanotube structure, a source electrode and a drain electrode. The gate insulating layer is located on the gate electrode. The carbon nanotube structure is located on the gate insulating layer. The source electrode and the drain electrode are arranged at intervals and electrically connected to the carbon nanotube structure respectively. The thin film transistor further includes an interface charge layer, and the interface charge layer is located between the carbon nanotube structure and the gate insulating layer.

Abstract: A method of n-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a film-like structure, wherein the film-like structure is a molybdenum disulfide film or a tungsten disulfide film; and converting at least one portion of the carbon nanotube from a p-type to an n-type by covering the carbon nanotube with the film-like structure.

Abstract: A method of p-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a layered structure, wherein the layered structure is a tungsten diselenide film or a black phosphorus film; and p-type doping at least one portion of the carbon nanotube by covering the carbon nanotube with the layered structure.

Abstract: A tunneling transistor includes a gate, an insulating layer placed on the gate, a carbon nanotube being semiconducting, a film-like structure, a source electrode, and a drain electrode. The carbon nanotube is placed on a surface of the insulating layer away from the gate. The film-like structure covers a portion of the carbon nanotube, and the film-like structure is a molybdenum disulfide film or a tungsten disulfide film. The source electrode is electrically connected to the film-like structure. The drain electrode is electrically connected to the carbon nanotube.

Abstract: A carbon nanotube composite structure includes a carbon nanotube and a film-like structure. The carbon nanotube includes a p-type portion and an n-type portion. The film-like structure is a molybdenum disulfide film or a tungsten disulfide film, and the film-like structure covers the n-type portion.