Patents by Inventor Gaofei Wang

Gaofei Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11969915
    Abstract: The present application disclosures a double production line and a rapid prefabrication process of a segmental beam. The double production line including two production machine and a track system provided on the construction ground; the production machine includes a fixed end mold, two side molds, a bottom mold trolley, a middle internal mold trolley and two side internal mold trolley; two side molds are positioned on two sides of the fixed end mold respectively, the fixed end mold and two side molds together define a pouring position with an end opening, two openings of the pouring position are arranged facing each other; the track system includes a transverse track and a longitudinal track communicated with each other, two pouring positions are both positioned in the extension path of the transverse track, and the longitudinal track is positioned between two pouring positions.
    Type: Grant
    Filed: December 20, 2021
    Date of Patent: April 30, 2024
    Assignees: CHINA RAILWAY GUANGZHOU ENGINEERING GROUP CO., LTD., China Railway Guangzhou Engineering Group Real Estate Co., Ltd.
    Inventors: Xiao Zhou, Xiaofeng Deng, Yongguang Chen, Zhouyu Xie, Gaofei Wei, Jiawei Yang, Ping Zhang, Beibei Cheng, Wenqiang Zheng, Ying Wang, Yuan Xu
  • Publication number: 20240113103
    Abstract: An integrated device, a semiconductor device, and an integrated device manufacturing method are provided, to improve capacitor integration density of the integrated device. The integrated device includes: A first dielectric layer is disposed on a first metal layer; the first metal layer, the first dielectric layer, and a gate metal layer on the first dielectric layer form a first capacitor; the gate metal layer, a second dielectric layer on the gate metal layer, and a second metal layer on the second dielectric layer form a second capacitor; and the first metal layer is connected to the second metal layer through a first conductor structure, so that the first capacitor and the second capacitor are connected in parallel.
    Type: Application
    Filed: December 8, 2023
    Publication date: April 4, 2024
    Inventors: Gaofei TANG, Qilong BAO, Hanxing WANG, Qimeng JIANG, Dongfa OUYANG
  • Publication number: 20200311552
    Abstract: A method for compressing a machine learning model by an electronic device. The method may comprise determining a compression parameter of a set hidden layer in a model based on a pruning number of respective channels included in the set hidden layer and a pruning loss of each hidden layer of the model; and compressing the model based on the compression parameter of the set hidden layer. The compression parameter may be related to a pruning of the model.
    Type: Application
    Filed: March 25, 2020
    Publication date: October 1, 2020
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong A, Gaofei Wang, Zhenbo Luo, Shuli Yang, Bin Sun, Pei Fu, Hua Wang
  • Patent number: D944430
    Type: Grant
    Filed: February 23, 2021
    Date of Patent: February 22, 2022
    Assignee: SHENZHEN ZHONGLAN LIGHT TECHNOLOGY CO., LTD.
    Inventor: Gaofei Wang