Patents by Inventor Gaoliang Zhang

Gaoliang Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11858093
    Abstract: The present application relates to a composite binding agent grinding wheel, wherein a weight percentage of each raw material of the grinding wheel is: 45-65% of pretreatment abrasive, 8-20% of resin bonding agent, 5-12% of hexagonal boron nitride, 5-10% of silicon dioxide, 5-15% of ceramic powder, 6-12% of prealloy powder bonding agent, and 1-3% of boron powder. The composite binding agent super-hard grinding wheel prepared by the present application can achieve nano-level grinding surface quality when grinding epitaxial wafers, and the grinding wheel has strong self-sharpening and high sharpness. It has obvious advantages in the finishing of silicon carbide crystal epitaxial wafers, which can solve the current limitations of back thinning processing of silicon carbide crystal epitaxial wafers.
    Type: Grant
    Filed: December 17, 2021
    Date of Patent: January 2, 2024
    Assignee: ZHENGZHOU RESEARCH INSTITUTE FOR ABRASIVES & GRINDING CO., LTD.
    Inventors: Yanjun Zhao, Lihua Wang, Gaoliang Zhang, Guanwen Qian, Donghua Zuo, Jianfeng Cao, Guannan Sun
  • Publication number: 20230042029
    Abstract: The present application relates to a composite binding agent grinding wheel, wherein a weight percentage of each raw material of the grinding wheel is: 45-65% of pretreatment abrasive, 8-20% of resin bonding agent, 5-12% of hexagonal boron nitride, 5-10% of silicon dioxide, 5-15% of ceramic powder, 6-12% of prealloy powder bonding agent, and 1-3% of boron powder. The composite binding agent super-hard grinding wheel prepared by the present application can achieve nano-level grinding surface quality when grinding epitaxial wafers, and the grinding wheel has strong self-sharpening and high sharpness. It has obvious advantages in the finishing of silicon carbide crystal epitaxial wafers, which can solve the current limitations of back thinning processing of silicon carbide crystal epitaxial wafers.
    Type: Application
    Filed: December 17, 2021
    Publication date: February 9, 2023
    Inventors: Yanjun Zhao, Lihua Wang, Gaoliang Zhang, Guanwen Qian, Donghua Zuo, Jianfeng Cao, Guannan Sun