Patents by Inventor GAOLIN ZHENG
GAOLIN ZHENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220344311Abstract: A high-voltage flip-chip semiconductor light-emitting device includes a substrate, at least two semiconductor light-emitting units, an isolation trench, a conducting layer, an isolating layer, a connecting layer, and a Bragg reflection layer. The semiconductor light-emitting units and the conducting layer are sequentially disposed on the substrate. The isolation trench is formed between the semiconductor light-emitting units. The isolating layer partially covers the conducting layer. The connecting layer is disposed on the isolating layer and electrically connects the semiconductor light-emitting units. The Bragg reflection layer covers the connecting layer and the isolating layer.Type: ApplicationFiled: July 5, 2022Publication date: October 27, 2022Applicant: XIAMEN SANAN OPTOELECTRONICS CO., LTD.Inventors: Shiwei LIU, Gaolin ZHENG, Anhe HE, Qing WANG, Ling-yuan HONG, Kang-Wei PENG, Su-hui LIN
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Publication number: 20220285596Abstract: A light-emitting device includes a carrier substrate, a flip-chip light-emitting diode (LED) mounted onto the carrier substrate, and an electrode unit disposed between the carrier substrate and the flip-chip LED. The electrode unit includes first and second connecting electrodes that have opposite conductivity. Each of the first and second connecting electrodes includes an intermediate metal layer and a binding layer that are sequentially disposed on the flip-chip LED in such order. The binding layer includes a first portion being adjacent to the carrier substrate and forming an eutectic system with tin, and a second portion located between the first portion and the intermediate metal layer.Type: ApplicationFiled: May 25, 2022Publication date: September 8, 2022Inventors: Shiwei LIU, Gaolin ZHENG, Anhe HE, Qing WANG, Su-hui LIN, Kang-wei PENG, Ling-yuan HONG, Jiangbin ZENG
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Publication number: 20220069170Abstract: A light-emitting device includes: a light-emitting mesa structure having a first top surface and a peripheral surface connected to the first top surface; a transparent conductive layer that is disposed on the first top surface and that has a second top surface; a first insulating structure that is at least disposed on the peripheral surface and that has a third top surface and an inner tapered surface indented from the third top surface, the inner tapered surface having an acute angle with respect to the second top surface; and a reflective layer that is disposed on the transparent conductive layer and that has a first side surface in contact with the inner tapered surface. A method for manufacturing the light-emitting device is also disclosed.Type: ApplicationFiled: September 1, 2021Publication date: March 3, 2022Applicant: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.Inventors: Xiaoliang LIU, Xiushan ZHU, Min HUANG, Gaolin ZHENG, Anhe HE, Kang-Wei PENG, Su-Hui LIN
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Publication number: 20200365768Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer and including a plurality of first sub-electrodes, wherein the plurality of first sub-electrodes are divided into one or more groups, and any two adjacent first sub-electrodes in the same group have a same projection distance; a second electrode disposed over and electrically coupled to the second semiconductor layer; a third electrode coupled to the plurality of first sub-electrodes and including one or more third sub-electrodes, wherein one of the third sub-electrodes corresponds to one of said one or more groups of the first sub-electrodes and connects first sub-electrodes in the group; and a fourth electrode coupled to the second electrode.Type: ApplicationFiled: May 29, 2020Publication date: November 19, 2020Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: GAOLIN ZHENG, HOU-JUN WU, ANHE HE, SHIWEI LIU, KANG-WEI PENG, SU-HUI LIN, CHIA-HUNG CHANG
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Patent number: 10825957Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer and including a plurality of first sub-electrodes, wherein the plurality of first sub-electrodes are divided into one or more groups, and any two adjacent first sub-electrodes in the same group have a same projection distance; a second electrode disposed over and electrically coupled to the second semiconductor layer; a third electrode coupled to the plurality of first sub-electrodes and including one or more third sub-electrodes, wherein one of the third sub-electrodes corresponds to one of said one or more groups of the first sub-electrodes and connects first sub-electrodes in the group; and a fourth electrode coupled to the second electrode.Type: GrantFiled: May 29, 2020Date of Patent: November 3, 2020Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Gaolin Zheng, Hou-Jun Wu, Anhe He, Shiwei Liu, Kang-Wei Peng, Su-Hui Lin, Chia-Hung Chang
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Patent number: 10707380Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer disposed between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer; and a second electrode disposed over and electrically coupled to said second semiconductor layer; wherein: the first electrode includes a plurality of first sub-electrodes; the second electrode includes a plurality of second sub-electrodes; and any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.Type: GrantFiled: September 30, 2018Date of Patent: July 7, 2020Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Gaolin Zheng, Hou-Jun Wu, Anhe He, Shiwei Liu, Kang-Wei Peng, Su-Hui Lin, Chia-Hung Chang
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Publication number: 20190123243Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer disposed between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer; and a second electrode disposed over and electrically coupled to said second semiconductor layer; wherein: the first electrode includes a plurality of first sub-electrodes; the second electrode includes a plurality of second sub-electrodes; and any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.Type: ApplicationFiled: September 30, 2018Publication date: April 25, 2019Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: GAOLIN ZHENG, HOU-JUN WU, ANHE HE, SHIWEI LIU, KANG-WEI PENG, SU-HUI LIN, CHIA-HUNG CHANG
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Patent number: 10242958Abstract: A fabrication method of a high-voltage light-emitting diode includes the steps of providing a substrate, and forming a light-emitting epitaxial laminated layer on the substrate; patterning the light-emitting epitaxial laminated layer and fabricating a channel that exposes the substrate surface so as to divide the light-emitting epitaxial laminated layer into a plurality of light-emitting diode units, and the light-emitting diode units at least constitute two rows; fabricating an electrode interconnection line crossing the channel, wherein, two adjacent light-emitting diode units are connected by the electrode interconnection line; fabricating an electrode bonding pad over the outmost light-emitting diode unit of the high-voltage light-emitting diode; and fabricating an insulating protective layer opening at the channel where the potential difference of any two adjacent light-emitting diodes is ?3 times of the forward voltage of a single light-emitting diode to avoid breakdown of the light-emitting epitaxial lType: GrantFiled: November 12, 2017Date of Patent: March 26, 2019Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Gaolin Zheng, Ling-yuan Hong, Xiaoxiong Lin, Feng Wang, Su-hui Lin, Chia-hung Chang
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Publication number: 20180076152Abstract: A fabrication method of a high-voltage light-emitting diode includes the steps of providing a substrate, and forming a light-emitting epitaxial laminated layer on the substrate; patterning the light-emitting epitaxial laminated layer and fabricating a channel that exposes the substrate surface so as to divide the light-emitting epitaxial laminated layer into a plurality of light-emitting diode units, and the light-emitting diode units at least constitute two rows; fabricating an electrode interconnection line crossing the channel, wherein, two adjacent light-emitting diode units are connected by the electrode interconnection line; fabricating an electrode bonding pad over the outmost light-emitting diode unit of the high-voltage light-emitting diode; and fabricating an insulating protective layer opening at the channel where the potential difference of any two adjacent light-emitting diodes is ?3 times of the forward voltage of a single light-emitting diode to avoid breakdown of the light-emitting epitaxial lType: ApplicationFiled: November 12, 2017Publication date: March 15, 2018Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Gaolin ZHENG, Ling-yuan HONG, Xiaoxiong LIN, Feng WANG, Su-hui LIN, Chia-hung CHANG
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Patent number: 9312449Abstract: An electrode structure for effectively improving the stability of a semiconductor LED includes a reflecting layer capable of current spreading. In such an electrode structure, the current injects from the side surface of the reflecting layer to form a certain potential gradient over the contact surface between the electrode and the LED contact surface, thereby inhibiting the metal ion of the reflecting layer from migration due to electric field during usage, thereby improving device stability. In addition, the electrode portion for current injection can include a high-reflectivity material yet not vulnerable to ion migration, thereby increasing the entire reflecting area and improving luminous efficiency.Type: GrantFiled: March 8, 2015Date of Patent: April 12, 2016Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Lixun Yang, Junpeng Shi, Xinghua Liang, Gaolin Zheng, Zhibai Zhong, Shaohua Huang, Chih-Wei Chao
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Publication number: 20150179889Abstract: An electrode structure for effectively improving the stability of a semiconductor LED includes a reflecting layer capable of current spreading. In such an electrode structure, the current injects from the side surface of the reflecting layer to form a certain potential gradient over the contact surface between the electrode and the LED contact surface, thereby inhibiting the metal ion of the reflecting layer from migration due to electric field during usage, thereby improving device stability. In addition, the electrode portion for current injection can include a high-reflectivity material yet not vulnerable to ion migration, thereby increasing the entire reflecting area and improving luminous efficiency.Type: ApplicationFiled: March 8, 2015Publication date: June 25, 2015Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: LIXUN YANG, JUNPENG SHI, XINGHUA LIANG, GAOLIN ZHENG, ZHIBAI ZHONG, SHAOHUA HUANG, CHIH-WEI CHAO