Patents by Inventor Gaoming FENG

Gaoming FENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12279538
    Abstract: The present invention disclosures a phase change memory unit, wherein comprising from bottom to top: a bottom electrode, a heating electrode, a phase change unit and a top electrode, the phase change unit is a longitudinally arranged column, which comprises: a cylindrical selector layer, a circular barrier layer and a circular phase change material layer form inside to outside; wherein, the bottom electrode, the heating electrode and the circular phase change material layer are sequentially connected, and the selector layer is connected to the top electrode. The present invention using trench sidewall deposition or via filling, forming the cylindrical phase change unit which is a circular nested structure, which can improve reliability of a device, greatly reduce volume of a phase change operation area and heat energy required, thus heating efficiency is improved obviously, the power consumption of the device is reduced, and high-density storage is realized.
    Type: Grant
    Filed: July 23, 2020
    Date of Patent: April 15, 2025
    Assignees: Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co., Ltd, SHANGHAI IC R&D CENTER CO., LTD.
    Inventors: Min Zhong, Ming Li, Shoumian Chen, Gaoming Feng
  • Publication number: 20240065120
    Abstract: The present invention is to provide a phase change memory unit and preparation method thereof. The phase change memory comprises a bottom electrode, a phase change cell, a heating electrode and a top electrode on a substrate from bottom to top. The phase change cell is a column vertically connected to the bottom electrode, which sequentially comprise a columnar phase change material layer, a hollow columnar heat dissipation layer and a hollow columnar switch layer from inside to outside. The top electrode, the heating electrode and the phase change material layer are connected sequentially from top to bottom, the switch layer is connected to the bottom electrode.
    Type: Application
    Filed: December 24, 2021
    Publication date: February 22, 2024
    Inventors: Min ZHONG, Ming LI, Gaoming FENG
  • Publication number: 20230363299
    Abstract: The present invention disclosures a phase change memory unit, wherein comprising from bottom to top: a bottom electrode, a heating electrode, a phase change unit and a top electrode, the phase change unit is a longitudinally arranged column, which comprises: a cylindrical selector layer, a circular barrier layer and a circular phase change material layer form inside to outside; wherein, the bottom electrode, the heating electrode and the circular phase change material layer are sequentially connected, and the selector layer is connected to the top electrode. The present invention using trench sidewall deposition or via filling, forming the cylindrical phase change unit which is a circular nested structure, which can improve reliability of a device, greatly reduce volume of a phase change operation area and heat energy required, thus heating efficiency is improved obviously, the power consumption of the device is reduced, and high-density storage is realized.
    Type: Application
    Filed: July 23, 2020
    Publication date: November 9, 2023
    Inventors: Min ZHONG, Ming LI, Shoumian CHEN, Gaoming FENG