Patents by Inventor Gaoqiang DENG

Gaoqiang DENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10340373
    Abstract: The present invention relates to the technical field of the power semiconductor device relates to a reverse conducting insulated gate bipolar transistor (RC-IGBT). The RC-IGBT comprises a P-type region, an N-type emitter region, a P-type body contact region, a dielectric trench, a collector region, and an electrical filed cutting-off region. The beneficial effect of the present invention is that, when compared with traditional RC-IGBT, the IGBT of the present invention can eliminate negative resistance effect and effectively improve the performance of forward and reverse conduction.
    Type: Grant
    Filed: May 22, 2017
    Date of Patent: July 2, 2019
    Assignee: University of Electronic Science and Technology of China
    Inventors: Xiaorong Luo, Gaoqiang Deng, Kun Zhou, Qing Liu, Linhua Huang, Tao Sun, Bo Zhang
  • Publication number: 20180061972
    Abstract: The present invention relates to the technical field of the power semiconductor device relates to a reverse conducting insulated gate bipolar transistor (RC-IGBT). The RC-IGBT comprises a P-type region, an N-type emitter region, a P-type body contact region, a dielectric trench, a collector region, and an electrical filed cutting-off region. The beneficial effect of the present invention is that, when compared with traditional RC-IGBT, the IGBT of the present invention can eliminate negative resistance effect and effectively improve the performance of forward and reverse conduction.
    Type: Application
    Filed: May 22, 2017
    Publication date: March 1, 2018
    Applicant: University of Electronic Science and Technology of China
    Inventors: Xiaorong LUO, Gaoqiang DENG, Kun ZHOU, Qing LIU, Linhua HUANG, Tao SUN, Bo ZHANG