Abstract: In a method for fabricating a semiconductor device, a stack of alternating insulating layers and sacrificial layers are formed over a substrate. A staircase having a plurality of steps are formed in the stack, where each of the plurality of steps has a tread and a riser and further includes a respective pair of the insulating layer and the sacrificial layer over the insulating layer of the respective step. A dielectric layer is formed along the treads and risers of the plurality of steps. The dielectric layer is doped with one or a combination of carbon, phosphorous, boron, arsenic, and oxygen. The sacrificial layers are further replaced with a conductive material to form word line layers that are arranged between the insulating layers. A plurality of word line contacts are formed to extend from the word line layers of the plurality of steps, and further extend through the dielectric layer.

Abstract: An adsorbent for wastewater treatment includes titanium hexametaphosphate; the titanium hexametaphosphate is mainly prepared from hexametaphosphate and titanium salt. The adsorbent is an aggregate of micron or nanometer particles, with a large surface area and a good adsorption performance. The adsorbent, as a wastewater treatment agent, may effectively remove thallium contaminants in various water bodies such as underground water, surface water, chemical wastewater and mine wastewater at a removal rate of 99.8%; and the adsorbent has a good removal capability for heavy metals in water such as cadmium, plumbum, copper, stibium, cesium and uranium. The adsorbent has a wide applicable PH value range, and especially has a good adsorption capacity, stability and heat resistance under acidic conditions.

Abstract: The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first substrate, and a bonding layer located on a surface of the first substrate. The material of the first bonding layer is a dielectric material containing element carbon (C). C atomic concentration of a surface layer of the first bonding layer away from the first substrate is higher than or equal to 35%. The first bonding layer of the semiconductor structure may be used to enhance bonding strength during bonding.

Abstract: The disclosure relates to wastewater treatment technologies, and particularly to an adsorbent and its preparation method and application. The adsorbent includes titanium hexametaphosphate; the titanium hexametaphosphate is mainly prepared from hexametaphosphate and titanium salt. The adsorbent is an aggregate of micron or nanometer particles, with a large surface area and a good adsorption performance. The adsorbent, as a wastewater treatment agent, may effectively remove thallium contaminants in various water bodies such as underground water, surface water, chemical wastewater and mine wastewater at a removal rate of 99.8%; and the adsorbent has a good removal capability for heavy metals in water such as cadmium, plumbum, copper, stibium, cesium and uranium. The adsorbent has a wide applicable PH value range, and especially has a good adsorption capacity, stability and heat resistance under acidic conditions. The preparation method is simple to operate, low in reaction condition requirements and low in cost.

Abstract: The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first substrate, and a bonding layer located on a surface of the first substrate. The material of the first bonding layer is a dielectric material containing element carbon (C). C atomic concentration of a surface layer of the first bonding layer away from the first substrate is higher than or equal to 35%. The first bonding layer of the semiconductor structure may be used to enhance bonding strength during bonding.

Abstract: A semiconductor structure and a method of forming the same are provided. The semiconductor structure includes a first substrate; a first adhesive layer disposed on the surface of the first substrate; a first buffer layer disposed on the surface of the first adhesive layer; and a first bonding layer disposed on the surface of the first buffer layer, wherein the densities of the first adhesive layer and the first buffer layer are greater than that of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and the first buffer layer, and the first buffer layer and the first bonding layer exhibit higher adhesion, which are beneficial to improve the performance of the semiconductor structure.

Abstract: The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first substrate; a first adhesive layer disposed on a surface of the first substrate; and a first bonding layer disposed on a surface of the first adhesive layer. A density of the first adhesive layer is greater than a density of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and first bonding layer, such that it is advantageous to improve a performance of the semiconductor structure.

Abstract: The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first substrate; a first adhesive layer disposed on a surface of the first substrate; and a first bonding layer disposed on a surface of the first adhesive layer. A density of the first adhesive layer is greater than a density of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and first bonding layer, such that it is advantageous to improve a performance of the semiconductor structure.

Abstract: The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first substrate, and a bonding layer located on a surface of the first substrate. The material of the first bonding layer is a dielectric material containing element carbon (C). C atomic concentration of a surface layer of the first bonding layer away from the first substrate is higher than or equal to 35%. The first bonding layer of the semiconductor structure may be used to enhance bonding strength during bonding.

Abstract: A semiconductor structure and a method of forming the same are provided. The semiconductor structure includes a first substrate; a first adhesive layer disposed on the surface of the first substrate; a first buffer layer disposed on the surface of the first adhesive layer; and a first bonding layer disposed on the surface of the first buffer layer, wherein the densities of the first adhesive layer and the first buffer layer are greater than that of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and the first buffer layer, and the first buffer layer and the first bonding layer exhibit higher adhesion, which are beneficial to improve the performance of the semiconductor structure.

Abstract: The present invention relates to a ferric and manganese binary oxide (FMBO) based adsorbent, its preparation and application method. The FMBO based adsorbent comprises a ferric and manganese binary oxide (FMBO) and a carrier. The mass ratio of FMBO to the carrier is between 0.2:100 and 15:100. The FMBO based adsorbent effectively removes the arsenic in groundwater, particularly the arsenite. The present invention also provides the equipment for preparation and application of the adsorbent.

Abstract: The present invention relates to a ferric and manganese binary oxide (FMBO) based adsorbent, its preparation and application method. The FMBO based adsorbent comprises a ferric and manganese binary oxide (FMBO) and a carrier. The mass ratio of FMBO to the carrier is between 0.2:100 and 15:100. The FMBO based adsorbent effectively removes the arsenic in groundwater, particularly the arsenite. The present invention also provides the equipment for preparation and application of the adsorbent.