Patents by Inventor Gap-Sok Do

Gap-Sok Do has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nonvolatile memory cell, nonvolatile memory device and method for driving the same
    Patent number: 8675402
    Abstract: A nonvolatile memory cell is able to reduce the size per the unit area by employing a dual gate structure where the chalcogenide compound is used for a channel. The nonvolatile memory cell includes a phase-change layer, a first and a second gate that are in contact with sides of the phase-change layer to face each other across the phase-in change layer and control a current flowing through the phase-change layer by each gate being arranged to induce the phase transition of the phase-change layer independently of the other.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: March 18, 2014
    Assignee: Hynix Semiconductor Inc.
    Inventors: Hae-Chan Park, Gap-Sok Do, Jang-Uk Lee
  • Nonvolatile memory cell, nonvolatile memory device and method for driving the same
    Patent number: 8570796
    Abstract: A nonvolatile memory cell is able to reduce the size per the unit area by employing a dual gate structure where the chalcogenide compound is used for a channel. The nonvolatile memory cell includes a phase-change layer, a first and a second gate that are in contact with sides of the phase-change layer to face each other across the phase-in change layer and control a current flowing through the phase-change layer by each gate being arranged to induce the phase transition of the phase-change layer independently of the other.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: October 29, 2013
    Assignee: Hynix Semiconductor Inc.
    Inventors: Hae-Chan Park, Gap-Sok Do, Jang-Uk Lee
  • Nonvolatile memory cell, nonvolatile memory device and method for driving the same
    Patent number: 8498147
    Abstract: A nonvolatile memory cell is able to reduce the size per the unit area by employing a dual gate structure where the chalcogenide compound is used for a channel. The nonvolatile memory cell includes a phase-change layer, a first and a second gate that are in contact with sides of the phase-change layer to face each other across the phase-change layer and control a current flowing through the phase-change layer by each gate being arranged to induce the phase transition of the phase-change layer independently of the other.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: July 30, 2013
    Assignee: Hynix Semiconductor Inc.
    Inventors: Hae-Chan Park, Gap-Sok Do, Jang-Uk Lee
  • NONVOLATILE MEMORY CELL, NONVOLATILE MEMORY DEVICE AND METHOD FOR DRIVING THE SAME
    Publication number: 20130043456
    Abstract: A nonvolatile memory cell is able to reduce the size per the unit area by employing a dual gate structure where the chalcogenide compound is used for a channel. The nonvolatile memory cell includes a phase-change layer, a first and a second gate that are in contact with sides of the phase-change layer to face each other across the phase-in change layer and control a current flowing through the phase-change layer by each gate being arranged to induce the phase transition of the phase-change layer independently of the other.
    Type: Application
    Filed: September 14, 2012
    Publication date: February 21, 2013
    Inventors: Hae-Chan Park, Gap-Sok Do, Jang-Uk Lee
  • NONVOLATILE MEMORY CELL, NONVOLATILE MEMORY DEVICE AND METHOD FOR DRIVING THE SAME
    Publication number: 20130039123
    Abstract: A nonvolatile memory cell is able to reduce the size per the unit area by employing a dual gate structure where the chalcogenide compound is used for a channel. The nonvolatile memory cell includes a phase-change layer, a first and a second gate that are in contact with sides of the phase-change layer to face each other across the phase-in change layer and control a current flowing through the phase-change layer by each gate being arranged to induce the phase transition of the phase-change layer independently of the other.
    Type: Application
    Filed: September 14, 2012
    Publication date: February 14, 2013
    Inventors: Hae-Chan PARK, Gap-Sok Do, Jang-Uk Lee
  • NONVOLATILE MEMORY CELL, NONVOLATILE MEMORY DEVICE AND METHOD FOR DRIVING THE SAME
    Publication number: 20130037874
    Abstract: A nonvolatile memory cell is able to reduce the size per the unit area by employing a dual gate structure where the chalcogenide compound is used for a channel. The nonvolatile memory cell includes a phase-change layer, a first and a second gate that are in contact with sides of the phase-change layer to face each other across the phase-in change layer and control a current flowing through the phase-change layer by each gate being arranged to induce the phase transition of the phase-change layer independently of the other.
    Type: Application
    Filed: September 14, 2012
    Publication date: February 14, 2013
    Inventors: Hae-Chan PARK, Gap-Sok Do, Jang-Uk Lee
  • Nonvolatile memory cell, nonvolatile memory device and method for driving the same
    Patent number: 8289761
    Abstract: A nonvolatile memory cell is able to reduce the size per the unit area by employing a dual gate structure where the chalcogenide compound is used for a channel. The nonvolatile memory cell includes a phase-change layer, a first and a second gate that are in contact with sides of the phase-change layer to face each other across the phase-change layer and control a current flowing through the phase-change layer by each gate being arranged to induce the phase transition of the phase-change layer independently of the other.
    Type: Grant
    Filed: June 26, 2009
    Date of Patent: October 16, 2012
    Assignee: Hynix Semiconductor Inc.
    Inventors: Hae-Chan Park, Gap-Sok Do, Jang-Uk Lee
  • NONVOLATILE MEMORY CELL, NONVOLATILE MEMORY DEVICE AND METHOD FOR DRIVING THE SAME
    Publication number: 20100296338
    Abstract: A nonvolatile memory cell is able to reduce the size per the unit area by employing a dual gate structure where the chalcogenide compound is used for a channel. The nonvolatile memory cell includes a phase-change layer, a first and a second gate that are in contact with sides of the phase-change layer to face each other across the phase-change layer and control a current flowing through the phase-change layer by each gate being arranged to induce the phase transition of the phase-change layer independently of the other.
    Type: Application
    Filed: June 26, 2009
    Publication date: November 25, 2010
    Inventors: Hae-Chan Park, Gap-Sok Do, Jang-Uk Lee