Patents by Inventor Gapseop SIM

Gapseop SIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12419133
    Abstract: A silicon photodiode according to an embodiment of the present invention comprises: a silicon substrate having a first conductive area and a second conductive area horizontally spaced apart from the first conductive area; a plurality of randomly arranged metal nanoparticles formed on the silicon substrate; an antireflective layer covering the metal nanoparticles; a first contact passing through the antireflective layer and connected to the first conductive layer; and a second contact passing through the antireflective layer and connected to the second conductive layer.
    Type: Grant
    Filed: January 12, 2023
    Date of Patent: September 16, 2025
    Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Jongcheol Park, Gapseop Sim, Tae Hyun Kim, Jong-Kwon Lee, Il-Suk Kang
  • Publication number: 20230155042
    Abstract: A silicon photodiode according to an embodiment of the present invention comprises: a silicon substrate having a first conductive area and a second conductive area horizontally spaced apart from the first conductive area; a plurality of randomly arranged metal nanoparticles formed on the silicon substrate; an antireflective layer covering the metal nanoparticles; a first contact passing through the antireflective layer and connected to the first conductive layer; and a second contact passing through the antireflective layer and connected to the second conductive layer.
    Type: Application
    Filed: January 12, 2023
    Publication date: May 18, 2023
    Inventors: Jongcheol PARK, Gapseop SIM, Tae Hyun KIM, Jong-Kwon LEE, Il-Suk KANG