Abstract: There are provided a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device includes a doped semiconductor layer including an upper surface facing a first direction, a multifunctional stack including a plurality of interlayer insulating layers and a plurality of conductive layers stacked alternately with each other in the first direction above the doped semiconductor layer, the multifunctional stack including a groove, a liner insulating layer on a bottom surface of the groove, a liner semiconductor layer on the liner insulating layer, and a first electrode and a second electrode spaced apart from each other in the groove and extending in the first direction from the liner semiconductor layer.

Abstract: The present invention relates to a compound of formula 1 and a pharmaceutical composition containing same. This compound may be useful as: a therapeutic agent for degenerative brain diseases including dementia or cranial nerve diseases and developmental disorders caused by neural cell damage, various degenerative neural diseases, ischemic nerve diseases, or neural damage diseases; a learning ability-improving agent; and a cognitive function-improving agent. [Formula 1] in formula 1 above, B represents a part derived from retinoic acid.

Abstract: A clock correction circuit in which a correction accuracy of a duty cycle is increased is provided.

Abstract: A clock correction circuit in which a correction accuracy of a duty cycle is increased is provided.

Abstract: The present invention relates to a method for preparing a cobalt-based catalyst for Fischer-Tropsch synthesis, more particularly to a method for preparing a cobalt-based catalyst represented by Ir—Co/?-Al2O3 wherein cobalt and iridium are supported at high density by repeating impregnation and drying tens of times on a spherical ?-alumina support having many acidic sites. The catalyst prepared according to the present invention can provide improved conversion rate of carbon monoxide and selectivity for liquid hydrocarbons when used for Fischer-Tropsch synthesis.

Abstract: The present invention relates to a method for preparing a nickel-based catalyst for steam carbon dioxide reforming (SCR) of natural gas using steam and carbon dioxide, more particularly to a method for preparing a nickel-based catalyst represented by Ni/?-Al2O3, which is prepared by supporting nickel on a spherical ?-alumina support having many acid sites at high density by repeating impregnation and drying tens of times. The catalyst prepared according to the present invention exhibits superior catalytic activity when used in steam carbon dioxide reforming reaction (SCR) even under harsh conditions of high temperature and high pressure and hardly exhibits carbon deposition due to superior durability.

Abstract: The present invention relates to a method for preparing a cobalt-based catalyst for Fischer-Tropsch synthesis, more particularly to a method for preparing a cobalt-based catalyst represented by Ir—Co/?-Al2O3 wherein cobalt and iridium are supported at high density by repeating impregnation and drying tens of times on a spherical ?-alumina support having many acidic sites. The catalyst prepared according to the present invention can provide improved conversion rate of carbon monoxide and selectivity for liquid hydrocarbons when used for Fischer-Tropsch synthesis.

Abstract: The present invention relates to a method for preparing a nickel-based catalyst for steam carbon dioxide reforming (SCR) of natural gas using steam and carbon dioxide, more particularly to a method for preparing a nickel-based catalyst represented by Ni/?-Al2O3, which is prepared by supporting nickel on a spherical ?-alumina support having many acid sites at high density by repeating impregnation and drying tens of times. The catalyst prepared according to the present invention exhibits superior catalytic activity when used in steam carbon dioxide reforming reaction (SCR) even under harsh conditions of high temperature and high pressure and hardly exhibits carbon deposition due to superior durability.