Abstract: An optical device includes a first optically dimmable switch for providing a first transmittance while the first optically dimmable switch is in a first state and providing a second transmittance distinct from the first transmittance while the first optically dimmable switch is in a second state distinct from the first state. The optical device also includes a dynamic heat source thermally coupled with the first optically dimmable switch. The dynamic heat source is at a first temperature at a first time and is at a second temperature distinct from the first temperature at a second time mutually exclusive from the first time. The optical device may operate as an optical dimming device, which may be used in head-mounted display devices or as dimmable windows or shutters.

Abstract: According to examples, a tunable visible light source may include a periodically poled lithium niobate (PPLN) waveguide and a control mechanism to optimize the phase-matching of the PPLN waveguide in response to an input signal with a varied wavelength. The control mechanism may include an electro-optic (EO) tuning mechanism, a microheater-based thermo-optic (TO) control mechanism, and/or an acousto-optic (AO) control mechanism. The control mechanisms may, respectively, generate an electric field, heat, or an acoustic wave to affect a change in refractive index of the PPLN waveguide and thereby optimize the conversion efficiency to maximize the output power of the output wavelength of the PPLN waveguide as the input wavelength is tuned.

Abstract: A method for assembling an LED apparatus using an epitaxial layered structure comprising a first-type doped semiconductor layer, a second-type doped semiconductor layer, and an active layer between the doped semiconductor layers. The method involves depositing a conductive layer adjacent to and in ohmic contact with the first-type doped semiconductor layer. After forming a pattern masked layer on the conductive layer to expose one or more unprotected mask regions, the unprotected mask region(s) are processed to form a micropixellated structure having micropixel contact areas that are electrically isolated from each other. The method further involves placing a first contact pad over the micropixellated structure to overlap the micropixel contact areas and form a first electrode shared by a set of micro-LEDs. The micropixellated structure is also electrically coupled to a second contact pad that forms a second electrode shared by the set of micro-LEDs.

Abstract: Embodiments of the present disclosure generally relate to light emitting diodes LEDs and methods of manufacturing the LEDs. The LEDs include a mesa-structure that improves light extraction of the LEDs. Furthermore, the process for forming the LEDs refrains from using physical etching to a quantum well active region of the LEDs to prevent compromising performance at the quantum well sidewall.

Abstract: A GaN layer of micro-LEDs is exposed to ion implantation to amorphize one or more regions of the GaN layer. As a result, the GaN layer through which light rays propagate have non-uniform refractive indexes that modify propagation paths of some light rays. Ions are implanted in a region overlapping an active region that emits light to function as a converging GRIN (gradient-index) lens. The ion implanted regions collimate light rays that propagate along predetermined directions. As such, the light extraction from and the focus of the micro-LEDs is increased.

Abstract: Embodiments of the present disclosure generally relate to light emitting diodes LEDs and methods of manufacturing the LEDs. The LEDs include a mesa-structure that improves light extraction of the LEDs. Furthermore, the process for forming the LEDs refrains from using physical etching to a quantum well active region of the LEDs to prevent compromising performance at the quantum well sidewall.

Abstract: There is herein described a low power consumption high brightness display. More particularly, there is described an integrated LED micro-display and a method of manufacturing the integrated LED micro-display.

Abstract: A first waveguide emits first light and a second waveguide emits second light. A filter is configured to reflect the second light and pass the first light to an entrance facet of the second waveguide.

Abstract: Embodiments relate to a light-emitting-diode (LED) cell that includes a LED and a controller. The controller receives a brightness data signal and generates a driving signal corresponding to the brightness data signal. The controller includes a comparator that receives the brightness data signal and a control waveform signal. The controller is coupled to a switched current source that generates a driving current based on the driving signal.

Abstract: Embodiments relate to a micro light-emitting-diode (mLED) cell that includes a mLED and a controller. The controller receives a brightness data signal and generates a driving signal corresponding to the brightness data signal. The controller is coupled to the mLED for providing the driving signal that turns on the mLED for first times and turns off the mLED for second times for a duration of a cycle. The driving signal causes a current density in mLED to be above a threshold value when the mLED is turned on.

Abstract: There is herein described light emitting medical devices and a method of manufacturing said medical devices. More particularly, there is described integrated light emitting medical devices (e.g. neural devices) capable of being used in optogenetics and a method of manufacturing said medical devices.

Abstract: Ion implantation is carried out into a GaN layer of mLEDs to partially or fully convert one or more regions of the crystalline GaN layer to amorphous GaN. As a result, the GaN layer through which light rays propagate have non-uniform refractive indexes that modify propagation paths of some light rays. Ions can be implanted in a region around an active region that emits light to function as an optical waveguide. The ion implanted regions direct light rays that propagate along predetermined directions into predetermined propagation paths thereby to modify the angle of incidence of these light rays. As such, the light extraction efficiency of the mLEDs is increased.

Abstract: A first waveguide emits first light and a second waveguide emits second light. A filter is configured to reflect the second light and pass the first light to an entrance facet of the second waveguide.

Abstract: There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaN and modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads.

Abstract: A light source includes a first, second, and third active optical waveguide emitting first, second, and third light, respectively. The first, second, and third active optical waveguides are coupled together to mix the first, second, and third light into a colinear illumination light.

Abstract: There is herein described a low power consumption high brightness display. More particularly, there is described an integrated LED micro-display and a method of manufacturing the integrated LED micro-display.

Abstract: A light emitting diode (LED) device includes micro LEDs and one or more macro LEDs formed on the same semiconductor substrate. Each micro LED emits modulated light to perform communication with another device. Each macro LED emits light to illuminate an environment surrounding the LED device and the size of the macro LED is relatively larger than the micro LED. The LED device may further include a notch filter to filter light generated by the macro LEDs so that the light from the macro LEDs do not interfere with communication performed by the micro LEDs.

Abstract: Embodiments relate to a light-emitting-diode (LED) cell that includes a LED and a controller. The controller receives a brightness data signal and generates a driving signal corresponding to the brightness data signal. The controller includes a comparator that receives the brightness data signal and a control waveform signal. The controller is coupled to a switched current source that generates a driving current based on the driving signal.

Abstract: There is herein described light generating electronic components with improved light extraction and a method of manufacturing said electronic components. More particularly, there is described LEDs having improved light extraction and a method of manufacturing said LEDs.

Abstract: There is herein described a low power consumption high brightness display. More particularly, there is described an integrated LED micro-display and a method of manufacturing the integrated LED micro-display.