Abstract: There is provided a method of producing multiple semiconductor components on a substrate, said method comprising the steps of: forming a predetermined relief pattern on a surface of said substrate; and epitaxially depositing a layer formed of a mixture of two or more Group III elements and two or more Group V elements on said surface; wherein said relief pattern results in said layer deposited in a single step forming with a different ratio between said Group V elements within areas having different relief pattern characteristics so as to provide different band gaps within said different areas.

Abstract: There is provided a method of producing multiple semiconductor components on a substrate, said method comprising the steps of: forming a predetermined relief pattern on a surface of said substrate; and epitaxially depositing a layer formed of a mixture of two or more Group III elements and two or more Group V elements on said surface; wherein said relief pattern results in said layer deposited in a single step forming with a different ratio between said Group V elements within areas having different relief pattern characteristics so as to provide different band gaps within said different areas.

Abstract: An apparatus forming a border for an image comprises a first pattern (3) and a further pattern (4) superimposed on but spaced from the fist pattern, the patterns comprising visually contrasting areas, overlying portions of the first pattern and the further pattern being such as to form a resultant pattern (5) appearing to lie in front of and/or behind the plane of the border. The first pattern and/or further pattern changes with time and comprises a liquid crystal panel comprising an array of addressable picture elements.