Patents by Inventor Garo W. Tanielian

Garo W. Tanielian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7114252
    Abstract: A plurality of individual circuits are formed on a substrate. Each of the individual circuits is formed with electrical contacts. A spacer is sealed onto the substrate, the spacer peripherally enclosing each of the individual circuits while exposing the conductive contacts. A cover is positioned over the spacer is and integral with it. First conductive feedthroughs penetrate the cover, the first conductive feedthroughs positioned peripheral to each of the individual circuits. Conductive pads are formed on a bottom surface of the cover, the conductive pads in electrical continuity with the conductive contacts of the individual circuits. Conductive paths are formed on the bottom surface of the cover, the conductive paths each joining at least one of the conductive pads with at least one of the first conductive feedthroughs thereby establishing electrical continuity between the individual circuits and the first conductive feedthroughs so as to establish pin-outs.
    Type: Grant
    Filed: June 17, 2004
    Date of Patent: October 3, 2006
    Assignee: Toko, Inc.
    Inventors: Aram Tanielian, Garo W. Tanielian, Keiichi Nakanishi
  • Patent number: 5473466
    Abstract: A thin transparent epitaxial layer of a magnetizable material (e.g. gallium ferrite) is deposited on a substrate of a dielectric transparent material (e.g. gadolinium gallium garnet). A mask made from an oxidizable material (e.g. silicon) deposited on the epitaxial layer covers pixels defining rows and columns and exposes the other areas on the epitaxial layer. The epitaxial layer is then annealed at a suitable temperature (e.g. 500.degree. C.) for a suitable time (e.g. 10 minutes) to oxidize the silicon and reduce the Fe atoms in the pixel areas beneath the mask to Fe.sup.++ ions. This causes the pixel areas beneath the mask to be more easily magnetizable than the other areas in the epitaxial layer. The mask is then removed and a first insulating layer is deposited on the epitaxial layer. A first plurality of windings is then deposited on the first insulated layer in insulating relationship to one another.
    Type: Grant
    Filed: June 2, 1994
    Date of Patent: December 5, 1995
    Inventors: Aram A. Tanielian, Garo W. Tanielian