Patents by Inventor Ga Room KIM

Ga Room KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230343788
    Abstract: An integrated circuit including a first active region and a second active region extending in a first direction and spaced apart from each other in a second direction intersecting the first direction; a power rail and a ground rail extending in the first direction and spaced apart from the first and second active regions and each other in the second direction; source/drain contacts extending in the second direction on at least a portion of the first or second active region, gate structures extending in the second direction and on at least a portion of the first and second active regions, a power rail configured to supply power through source/drain contact vias, and a ground rail configured to supply a ground voltage through source/drain contact vias.
    Type: Application
    Filed: June 29, 2023
    Publication date: October 26, 2023
    Inventors: Gi Young Yang, Hyeon Gyu You, Ga Room Kim, Jin Young Lim, In Gyum Kim, Hak Chul Jung
  • Patent number: 11735592
    Abstract: An integrated circuit including a first active region and a second active region extending in a first direction and spaced apart from each other in a second direction intersecting the first direction; a power rail and a ground rail extending in the first direction and spaced apart from the first and second active regions and each other in the second direction; source/drain contacts extending in the second direction on at least a portion of the first or second active region, gate structures extending in the second direction and on at least a portion of the first and second active regions, a power rail configured to supply power through source/drain contact vias, and a ground rail configured to supply a ground voltage through source/drain contact vias.
    Type: Grant
    Filed: September 23, 2020
    Date of Patent: August 22, 2023
    Inventors: Gi Young Yang, Hyeon Gyu You, Ga Room Kim, Jin Young Lim, In Gyum Kim, Hak Chul Jung
  • Publication number: 20210193683
    Abstract: An integrated circuit including a first active region and a second active region extending in a first direction and spaced apart from each other in a second direction intersecting the first direction; a power rail and a ground rail extending in the first direction and spaced apart from the first and second active regions and each other in the second direction; source/drain contacts extending in the second direction on at least a portion of the first or second active region, gate structures extending in the second direction and on at least a portion of the first and second active regions, a power rail configured to supply power through source/drain contact vias, and a ground rail configured to supply a ground voltage through source/drain contact vias.
    Type: Application
    Filed: September 23, 2020
    Publication date: June 24, 2021
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Gi Young YANG, Hyeon Gyu YOU, Ga Room KIM, Jin Young LIM, In Gyum KIM, Hak Chul JUNG