Abstract: Silica-containing substrates including vias with a narrow waist, electronic devices incorporating a silica-containing substrate, and methods of forming vias with narrow waist in silica-containing substrates are disclosed. In one embodiment, an article includes a silica-containing substrate including greater than or equal to 85 mol % silica, a first surface, a second surface opposite the first surface, and a via extending through the silica-containing substrate from the first surface toward the second surface. The via includes a first diameter at the first surface wherein the first diameter is less than or equal to 100 ?m, a second diameter at the second surface wherein the first diameter is less than or equal to 100 ?m, and a via waist between the first surface and the second surface. The via waist has a waist diameter that is less than the first diameter and the second diameter such that a ratio between the waist diameter and each of the first diameter and the second diameter is less than or equal to 75%.

Abstract: Silica-containing substrates including vias with a narrow waist, electronic devices incorporating a silica-containing substrate, and methods of forming vias with narrow waist in silica-containing substrates are disclosed. In one embodiment, an article includes a silica-containing substrate including greater than or equal to 85 mol % silica, a first surface, a second surface opposite the first surface, and a via extending through the silica-containing substrate from the first surface toward the second surface. The via includes a first diameter at the first surface wherein the first diameter is less than or equal to 100 ?m, a second diameter at the second surface wherein the first diameter is less than or equal to 100 ?m, and a via waist between the first surface and the second surface. The via waist has a waist diameter that is less than the first diameter and the second diameter such that a ratio between the waist diameter and each of the first diameter and the second diameter is less than or equal to 75%.

Abstract: A method for laser processing a substrate stack includes forming a defect in a transparent workpiece of the substrate stack having a black matrix layer. Forming the defect includes directing a portion of a pulsed laser beam into the transparent workpiece. The pulsed laser beam includes a wavelength ?, a spot size wo, and a Rayleigh range ZR that is greater than F D ? ? ? ? w 0 , 2 ? , where FD is a dimensionless divergence factor comprising a value of 10 or greater. The pulsed laser beam directed into the transparent workpiece of the substrate stack forms a pulsed laser beam focal line disposed within the transparent workpiece, where a center of the pulsed laser beam focal line is offset from an edge of the black matrix layer by a distance that is about 20% or less of a total thickness of the substrate stack and generates an induced absorption within the transparent workpiece.

Abstract: A liquid lens that includes: a lens body comprising a first window, a second window, and a cavity disposed between the first window and the second window; and a first liquid and a second liquid within the cavity of the lens body, the first liquid and the second liquid substantially immiscible with each other and having different refractive indices such that an interface between the first liquid and second liquid to form a lens. The sidewall of the cavity has an average surface roughness (Ra) of less than or equal to 200 nanometers (nm). The cavity is disposed within a plate. Further, each of the windows and the plate comprises a glass, glass-ceramic or ceramic composition. In addition, a linearity of a first bottom portion of the sidewall in proximity to the base of the plate can be from 0 ?m±5 ?m.

Abstract: A method for processing a transparent workpiece includes directing a pulsed laser beam into the transparent workpiece such that a portion of the pulsed laser beam directed into the transparent workpiece generates an induced absorption within the transparent workpiece, thereby forming a damage line within the transparent workpiece, and the portion of the pulsed laser beam directed into the transparent workpiece includes a wavelength ?, a spot size w0, and a Rayleigh range ZR that is greater than F D ? ? ? w 0 2 ? , where FD is a dimensionless divergence factor comprising a value of 10 or greater. Further, the method for processing the transparent workpiece includes etching the transparent workpiece with an etching vapor to remove at least a portion of the transparent workpiece along the damage line, thereby forming an aperture extending through the at least a portion of the thickness of the transparent workpiece.

Abstract: A method of separating a portion of an object comprising: presenting an object having a thickness; using a laser emission at a wavelength to perforate at least a portion of the thickness of the object sequentially over a length to form a series of perforations between a first portion of the object on one side of the series of perforations and a second portion of the object on the other side of the series of perforations; and applying a stress to the object at the series of perforations to separate the first portion of the object from the second portion of the object, wherein the thickness of the object, at the series of perforations, is transparent to the wavelength of the laser emission.

Abstract: A method for laser processing a transparent workpiece includes forming a contour line that includes defects, by directing a pulsed laser beam output by a beam source through an aspheric optical element positioned offset in a radial direction from the beam pathway and into the transparent workpiece such that the portion of the pulsed laser beam directed into the transparent workpiece generates an induced absorption within the transparent workpiece that produces a defect within the transparent workpiece. The portion of the pulsed laser beam directed into the transparent workpiece includes a wavelength ?, an effective spot size wo,eff, and a non-axisymmetric beam cross section having a minimum Rayleigh range ZRx,min in an x-direction and a minimum Rayleigh range ZRy,min in a y-direction. Further, the smaller of ZRx,min and ZRy,min is greater than FD?w0,eff2/?, where FD is a dimensionless divergence factor comprising a value of 10 or greater.

Abstract: A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.

Abstract: A method for processing a transparent workpiece includes directing a pulsed laser beam into the transparent workpiece such that a portion of the pulsed laser beam directed into the transparent workpiece generates an induced absorption within the transparent workpiece, thereby forming a damage line within the transparent workpiece, and the portion of the pulsed laser beam directed into the transparent workpiece includes a wavelength ?, a spot size w0, and a Rayleigh range ZR that is greater than F D ? ? ? w 0 2 ? , where FD is a dimensionless divergence factor comprising a value of 10 or greater. Further, the method for processing the transparent workpiece includes etching the transparent workpiece with an etching vapor to remove at least a portion of the transparent workpiece along the damage line, thereby forming an aperture extending through the at least a portion of the thickness of the transparent workpiece.

Abstract: A method for laser processing a transparent workpiece includes forming a contour line that includes defects, by directing a pulsed laser beam output by a beam source through an aspheric optical element positioned offset in a radial direction from the beam pathway and into the transparent workpiece such that the portion of the pulsed laser beam directed into the transparent workpiece generates an induced absorption within the transparent workpiece that produces a defect within the transparent workpiece. The portion of the pulsed laser beam directed into the transparent workpiece includes a wavelength ?, an effective spot size wo,eff, and a non-axisymmetric beam cross section having a minimum Rayleigh range ZRx,min in an x-direction and a minimum Rayleigh range ZRy,min in a y-direction. Further, the smaller of ZRx,min and ZRy,min is greater than F D ? ? ? ? w 0 , eff 2 ? , where FD is a dimensionless divergence factor comprising a value of 10 or greater.

Abstract: A tiled display having pixels arranged in rows and columns, and including first and second tiles. The tiles comprise a substrate carrying a matrix of pixels arranged at a pixel pitch. The substrates comprise an edge extending between opposing faces in a depth direction. The substrate edges have a complementary shape, and face one another to establish a seam. The pixel pitch is maintained across the seam. Pixels of the second tile are not interposed between pixels of the first tile. The complementary shape includes a segment of the seam being oblique to the pixel rows, or the substrate edge of the first tile profiled in the depth direction whereby at least a section of the edge is non-perpendicular to the faces. The tiled display can maintain the pixel pitch at the seams at high resolutions (e.g., pixel pitch less than 0.5 mm).

Abstract: The present disclosure relates to a process for cutting and separating arbitrary shapes of thin substrates of transparent materials, particularly tailored composite fusion drawn glass sheets, and the disclosure also relates to a glass article prepared by the method. The developed laser method can be tailored for manual separation of the parts from the panel or full laser separation by thermally stressing the desired profile. The self-separation method involves the utilization of an ultra-short pulse laser that can be followed by a CO2 laser (coupled with high pressure air flow) for fully automated separation.

Abstract: Processes of chamfering and/or beveling an edge of a glass substrate of arbitrary shape using lasers are described herein. Two general methods to produce chamfers on glass substrates are the first method involves cutting the edge with the desired chamfer shape utilizing an ultra-short pulse laser to create perforations within the glass; followed by an ion exchange.

Abstract: Methods of forming a ferrule are disclosed where the ferrule includes an inner member and an outer member. An optical fiber is secured in an axial bore of the inner member, and then offset of a core of the optical fiber from a geometric center of the inner member is determined. The outer member is then formed over the inner member to “correct” for this offset so that the core of the optical fiber ends up closer to the geometric center of the resulting ferrule. Related ferrules and cable assemblies including the same are also disclosed.

Abstract: A gas permeable glass window, suitable for use with liquid interface additive manufacturing, has an optically transparent glass article greater than about 0.5 millimeters in thickness defining a first surface and a second surface. A plurality of gas channels are disposed through the article from the first surface to the second surface. The gas channels occupy less than about 1.0% of a surface area of the article and are configured such that the article has a gas permeability between about 10 barrers and about 2000 barrers.

Abstract: A method of laser processing a workpiece includes: focusing a pulsed laser beam into a laser beam focal line directed into the workpiece such that the laser beam focal line generates an induced absorption and produces a defect line along the laser beam focal line within the workpiece. The laser beam focal line has length L and a substantially uniform intensity profile such that the peak intensity distribution over at least 85% of the length L of the focal line does not vary by more 40%, and in some embodiments by no more than 30 or 20% from its mean peak intensity.

Abstract: A method for laser processing a substrate stack includes forming a defect in a transparent workpiece of the substrate stack having a black matrix layer. Forming the defect includes directing a portion of a pulsed laser beam into the transparent workpiece. The pulsed laser beam includes a wavelength ?, a spot size wo, and a Rayleigh range ZR that is greater than F D ? ? ? ? w 0 , 2 ? , where FD is a dimensionless divergence factor comprising a value of 10 or greater. The pulsed laser beam directed into the transparent workpiece of the substrate stack forms a pulsed laser beam focal line disposed within the transparent workpiece, where a center of the pulsed laser beam focal line is offset from an edge of the black matrix layer by a distance that is about 20% or less of a total thickness of the substrate stack and generates an induced absorption within the transparent workpiece.

Abstract: Methods of reshaping ferrules used in optical fiber cables assemblies are disclosed. The reshaping methods reduce a core-to-ferrule concentricity error (E), which improves coupling efficiency and optical transmission. The methods include measuring a true center of the ferrule, wherein the true center is based on an outer surface of the ferrule; and reshaping at least a portion of the ferrule to change the true center of the ferrule, wherein the reshaping includes enlarging a portion of the ferrule. A variety of reshaping techniques are also disclosed.

Abstract: Methods for forming holes in a substrate by reducing back reflections of a quasi-non-diffracting beam into the substrate are described herein. In some embodiments, a method of processing a substrate having a first surface and a second surface includes applying an exit material to the second surface of the substrate, wherein a difference between a refractive index of the exit material and a refractive index of the substrate is 0.4 or less, and focusing a pulsed laser beam into a quasi-non-diffracting beam directed into the substrate such that the quasi-non-diffracting beam enters the substrate through the first surface. The substrate is transparent to at least one wavelength of the pulsed laser beam. The quasi-non-diffracting beam generates an induced absorption within the substrate that produces a damage track within the substrate.

Abstract: Processes of chamfering and/or beveling an edge of a glass or other substrate of arbitrary shape using lasers are described herein. Three general methods to produce chamfers on glass substrates are disclosed. The first method involves cutting the edge with the desired chamfer shape utilizing an ultra-short pulse laser. Treatment with the ultra-short laser may be optionally followed by a CO2 laser for fully automated separation. The second method is based on thermal stress peeling of a sharp edge corner, and it has been demonstrated to work with different combination of an ultrashort pulse and/or CO2 lasers. A third method relies on stresses induced by ion exchange to effect separation of material along a fault line produced by an ultra-short laser to form a chamfered edge of desired shape.