Abstract: A metrology system is configured to provide visual inspection of a workpiece, three-dimensional magnetic field map, and height measurement. A stage is configured to bring points of interest at the workpiece under the desired tool for measurement. The optical field, magnetic field, and height information can be used independently or together in order to correlate defects in the manufacturing process of the workpiece. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: One embodiment relates to an electron beam apparatus. The apparatus includes a source for generating an incident electron beam, an electron lens for focusing the incident electron beam so that the beam impinges upon a substrate surface and interacts with surface material so as to cause secondary emission of scattered electrons, and a detector configured to detect the scattered electrons. The apparatus further includes an advantageous device configured to trap the scattered electrons which are emitted at sharp angles relative to the sample surface plane of the substrate surface. Other embodiments are also disclosed.

Abstract: A metrology system is configured to provide visual inspection of a workpiece, three-dimensional magnetic field map, and height measurement. A stage is configured to bring points of interest at the workpiece under the desired tool for measurement. The optical field, magnetic field, and height information can be used independently or together in order to correlate defects in the manufacturing process of the workpiece. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: Structural modification using electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Structural modifications of the target may be conducted by means of etching due to interaction between the electron beam and gas composition.

Abstract: Etch selectivity enhancement during electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Selectivity of etching of the target due to interaction between the electron beam and gas composition may be enhanced in a number of ways.

Abstract: A scanning electron beam apparatus with an Auger spectrometer. The apparatus includes at least an electron column for generating a primary electron beam, a magnetic objective lens configured to focus the primary electron beam onto a surface of a target substrate, and a spectrometer configured to detect Auger electrons emitted from the surface of the target substrate. The magnetic objective lens applies a magnetic field strength greater than 10 Gauss and less than 50 Gauss at the surface of the target substrate. Other embodiments, aspects and features are also disclosed.

Abstract: Etch selectivity enhancement during electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Selectivity of etching of the target due to interaction between the electron beam and gas composition may be enhanced in a number of ways.

Abstract: Structural modification using electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Structural modifications of the target may be conducted by means of etching due to interaction between the electron beam and gas composition.