Abstract: During polishing of a substrate, polysilicon can be removed from a surface of the substrate. Detecting an endpoint during polishing of polysilicon can include polishing the substrate having a polysilicon residue on an area of oxide area and optically detecting clearance of the polysilicon residue.

Abstract: Methods and compositions are provided for planarizing a substrate surface with reduced or minimal defects in surface topography. In one aspect, a method is provided for processing a substrate comprising a dielectric material and polysilicon material disposed thereon, polishing the polysilicon material with a high topography selective polishing composition, and polishing the polysilicon material with a material selective composition.

Abstract: Methods and compositions are provided for planarizing a substrate surface with reduced or minimal defects in surface topography. In one aspect, a method is provided for processing a substrate comprising a dielectric material and polysilicon material disposed thereon, polishing the polysilicon material with a high topography selective polishing composition, and polishing the polysilicon material with a material selective composition.

Abstract: A cleaning apparatus is provided for brush cleaning a surface of a substrate. The apparatus comprises a first brush having a first surface geometry adapted to scrub a major surface of the substrate, and a second brush having a second surface geometry different from the first surface geometry and adapted to scrub the major surface of the substrate. In one aspect the cleaning apparatus comprises a first scrubbing apparatus having at least one brush with a profiled surface geometry, adapted to scrub a major surface of a substrate, and a second scrubbing apparatus having at least one brush with a smooth surface geometry, adapted to scrub a major surface of a substrate. Numerous other aspects are provided.