Abstract: A magnetic memory storage device with at least one magnetic storage element comprising electrical addressing leads to inject electrical current directly through a single magnetic memory storage element. The number of electrical addressing leads is at least one more than the number of magnetic memory storage elements.

Abstract: A magnetic memory storage device with at least one magnetic storage element comprising electrical addressing leads to inject electrical current directly through a single magnetic memory storage element. The number of electrical addressing leads is at least one more than the number of magnetic memory storage elements.

Abstract: A magnetic memory storage device with at least one magnetic storage element comprising electrical addressing leads to inject electrical current directly through a single magnetic memory storage element. The number of electrical addressing leads is at least one more than the number of magnetic memory storage elements.

Abstract: A magnetic memory storage device with at least one magnetic storage element comprising electrical addressing leads to inject electrical current directly through a single magnetic memory storage element. The number of electrical addressing leads is at least one more than the number of magnetic memory storage elements.

Abstract: A magnetic sensing element detects the presence of magnetic particles in a binding assay. The magnetic sensing element has at least one planar layer of electrically conductive ferromagnetic material that has an initial state in which the material has a circular magnetic moment within the plane of the layer. The magnetic sensing element has molecules of a first specific binding member attached to it. The device also includes a fluid test medium to which the magnetic sensing element is exposed during the course of a binding assay. The fluid test medium includes magnetizable particles that become immobilized during the assay in relation to the amount of analyte in the test medium.

Abstract: Hall Effect devices, memory devices, and Hall Effect device readout voltage increasing method. A hall effect device includes a conductive film layer capable an electrical current, a ferromagnetic layer having a configurable orientation and configured to cover a portion of the conductive film layer such that fringe magnetic fields can be generated by an edge portion of the ferromagnetic layer, a high permeability magnetic layer disposed below the conductive film layer. The fringe magnetic fields are drawn toward the high permeability magnetic layer such that the magnetic fields pass though the conductive film layer to enable closure of the magnetic fields.

Abstract: A method of making a high efficiency magnetic sensor for determining the presence or amount of an analyte in a test sample. The method typically includes providing a sensing device with a magnetic sensing element, exposing the sensing device to a fluid test medium suspected of containing an analyte and monitoring the resistance of the magnetic sensing element to detect any change in the electrical resistance of the magnetic sensing element in response to the immobilization of a magnetizable particle. The magnetic sensing element comprises at least one planar layer of electrically conductive ferromagnetic material having an initial state in which the material has a circular magnetic moment within the plane of the layer, a means to immobilize a magnetizable particle at a point along an axis that is perpendicular to the plane of the layer and passes through the center of the circular magnetic moment, and a means for detecting the change in the electrical resistance of each magnetic sensing element.

Abstract: A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface: and (b) a ferromagnetic multilayer, where the conductive film or layer is composed of high mobility semiconductors. Also, a Hall effect device can be a device in which the Hall plate comprises an indium compound, germanium or mixtures thereof. The devices are useful for a variety of applications such as a memory element in a nonvolatile random access memory array (NRAM) and as a logic gate.

Abstract: A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface; and (b) a ferromagnetic multilayer, where the conductive film or layer is composed of high mobility semiconductors. Also, a Hall effect device can be a device in which the Hall plate comprises an indium compound, germanium or mixtures thereof. The devices are useful for a variety of applications such as a memory element in a nonvolatile random access memory array (NRAM) and as a logic gate.

Abstract: A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface; and (b) a ferromagnetic layer, where the conductive film or layer is composed of high mobility semiconductors. Also, a Hall effect device can have a ferromagnetic element that is a multilayer (e.g., a bilayer), and a device in which the Hall plate comprises an indium compound, germanium or mixtures thereof. The devices are useful for a variety of applications such as a memory element in a nonvolatile random access memory array (NRAM) and as a logic gate.

Abstract: A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface; and (b) a ferromagnetic layer, where the conductive film or layer is composed of high mobility semiconductors. Also, a Hall effect device can have a ferromagnetic element that is a multilayer (e.g., a bilayer), and a device in which the Hall plate comprises an indium compound, germanium or mixtures thereof. The devices are useful for a variety of applications such as a memory element in a nonvolatile random access memory array (NRAM) and as a logic gate.

Abstract: A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface; and (b) a ferromagnetic layer comprised of a magnetic insulator. Such magnetic insulator can be a ferrite or a perovskite ferromagnetic oxide. Also, a Hall effect device can have a ferromagnetic element that is a multilayer (e.g., a bilayer), and a device in which the Hall plate comprises an indium compound, germanium or mixtures thereof. The devices are useful for a variety of applications such as a memory element in a nonvolatile random access memory array (NRAM) and as a logic gate.

Abstract: A wafer suitable to be tested for current-perpendicular to the plane resistance includes a substrate, a conductive base layer on the substrate, a magnetic multilayer on the conductive base layer, and a top conductive layer. A testing ring is formed on the magnetic multilayer in a manner whereby it is separated from rest of the magnetic multilayer by a trench in the magnetic multilayer. Within the testing ring, the magnetic multilayer includes a hole. The current perpendicular to the plane resistance of the wafer may be determined by passing a predetermined current perpendicular through the testing ring by contacting a probe to the testing ring and measuring the voltage at the conductive base layer. The probe used in the present invention may be an AFM or a STM probe.

Abstract: A magnetic sensing element detects the presence of magnetic particles in a binding assay. The magnetic sensing element has at least one planar layer of electrically conductive ferromagnetic material that has an initial state in which the material has a circular magnetic moment within the plane of the layer. The magnetic sensing element has molecules of a first specific binding member attached to it. The device also includes a fluid test medium to which the magnetic sensing element is exposed during the course of a binding assay. The fluid test medium includes magnetizable particles that become immobilized during the assay in relation to the amount of analyte in the test medium.

Abstract: A magnetic sensing element detects the presence of magnetic particles in a binding assay. The magnetic sensing element has at least one planar layer of electrically conductive ferromagnetic material that has an initial state in which the material has a circular magnetic moment within the plane of the layer. The magnetic sensing element has molecules of a first specific binding member attached to it. The device also includes a fluid test medium to which the magnetic sensing element is exposed during the course of a binding assay. The fluid test medium includes magnetizable particles that become immobilized during the assay in relation to the amount of analyte in the test medium.

Abstract: A magnetic sensing element detects the presence of magnetic particles in a binding assay. The magnetic sensing element has at least one planar layer of electrically conductive ferromagnetic material that has an initial state in which the material has a circular magnetic moment within the plane of the layer. The magnetic sensing element has molecules of a first specific binding member attached to it. The device also includes a fluid test medium to which the magnetic sensing element is exposed during the course of a binding assay. The fluid test medium includes magnetizable particles that become immobilized during the assay in relation to the amount of analyte in the test medium.

Abstract: A device including a magnetic material having a magnetization configuration that is circular in a plane, and a word line for producing a magnetic field in the plane, the magnetic field being radial with respect to a point in the plane and within the circular magnetization configuration.

Abstract: A random access memory element utilizes giant magnetoresistance. The element includes at least one pair of ferromagnetic layers sandwiching a nonmagnetic conductive layer. At least one of the two ferromagnetic layers has a magnetic moment oriented within its own plane. The magnetic moment of at least the first ferromagnetic layer of the pair has its magnetic moment oriented within its own plane and is typically fixed in direction during use. The second ferromagnetic layer of the pair has a magnetic moment which has at least two preferred directions of orientation. These preferred directions of orientation may or may not reside within the plane of the second ferromagnetic layer. The bit of the memory element may be set by applying to the element a magnetic field which orients the magnetic moment of the second ferromagnetic layer in one or the other of these preferred orientations.

Abstract: A memory architecture for a regular array of non-volatile ferromagnetic rom access annular memory elements which can be based on the giant magnetoresistance (GMR) effect. A first sense row in the array connects the memory elements with strips which are staggered so that each memory element is connected through its upper surface to the memory element on one side and through the lower surface to one on the other side. Running transverse to the first sense row is a word line made up of a series of wires passing in magnetic field producing proximity to the memory elements along a column of the array and not being in electrical contact with the memory elements. The strips of the word line are staggered so they similarly produce a meandering conductive pathway through the word line from one side of the array to the other in series. The wires of the word line can pass through the open core of the annular element or the wires can pass adjacent to the memory elements.

Abstract: A random access memory element utilizes giant magnetoresistance. The element includes at least one pair of ferromagnetic layers sandwiching a nonmagnetic conductive layer. At least one of the two ferromagnetic layers has a magnetic moment oriented within its own plane. The magnetic moment of at least the first ferromagnetic layer of the pair has its magnetic moment oriented within its own plane and is typically fixed in direction during use. The second ferromagnetic layer of the pair has a magnetic moment which has at least two preferred directions of orientation. These preferred directions of orientation may or may not reside within the plane of the second ferromagnetic layer. The bit of the memory element may be set by applying to the element a magnetic field which orients the magnetic moment of the second ferromagnetic layer in one or the other of these preferred orientations.