Abstract: A showerhead for a substrate processing chamber configured to perform bulk deposition includes a faceplate, a backplate, and a faceplate. The faceplate defines a first plenum corresponding to center and middles zones and a second plenum corresponding to an edge zone. The faceplate includes a first plurality of holes distributed throughout the center zone and the middle zone and a second plurality of holes distributed throughout the edge zone. The middle plate is disposed between the faceplate and the backplate. The faceplate is configured to receive a first gas mixture supplied to the center zone via a center inlet, receive a second gas mixture supplied to the middle zone via a middle inlet, blend the first gas mixture and the second gas mixture within the first plenum, and receive a third gas mixture supplied to the edge zone via an edge inlet.

Abstract: A showerhead for a substrate processing chamber includes a head portion configured to receive a gas mixture and a stem portion coupled to the head portion. A first plenum is defined within the head portion and the gas mixture flows into the plenum and from the plenum into the substrate processing chamber via holes arranged in a lower surface of the head portion. The stem portion is configured to supply the gas mixture to the head portion through a central bore. A mixing chamber is arranged on the stem portion. The mixing chamber is configured to receive a first gas supplied from a first mixer inlet and a second gas supplied from a second mixer inlet, mix the first gas and the second gas into the gas mixture, and direct the gas mixture into an upper end of the central bore to be supplied downward into the head portion.

Abstract: A pedestal assembly for a substrate processing system configured to perform bulk deposition on a substrate is configured to be raised and lowered. The pedestal assembly includes a stem portion, a baseplate portion disposed on the stem portion, and a pumping ring assembly. The baseplate portion is configured to support the substrate. The pumping ring assembly is disposed around the baseplate portion and includes a lower pumping ring and an upper pumping ring disposed above the lower pumping ring. The pumping ring assembly is configured to define an annular volume radially outside of the pumping ring assembly such that the pumping ring assembly separates the annular volume from a volume defined below the baseplate portion of the pedestal assembly.

Abstract: A substrate support includes a body and first and second thermal voids. The body supports a substrate during processing and includes a top plate, one or more intermediate plates and a bottom plate arranged to form a stack. The one or more intermediate plates are disposed on the bottom plate below the top plate. Each of the first and second thermal voids is defined by the one or more intermediate plates. A cross-section vertically through the first thermal void includes horizontally extending sides and vertically extending sides. The first thermal void is horizontally oriented such that the horizontally extending sides are longer than the vertically extending sides. A cross-section vertically through the second thermal void includes second vertically extending sides and second horizontally extending sides. The second thermal void is vertically oriented such that the second vertically extending sides are longer than the second horizontally extending sides.

Abstract: A cleaning apparatus for a vacuum pedestal and method of cleaning a pedestal used in semiconductor device fabrication are described. The apparatus has a baseplate, a collar attached to the baseplate, a cap disposed on the collar, and a shaft that extends from the collar through the cap, collar and baseplate. A manual rotatable handle is attached to a shaft portion that extends from the cap. Motion of the handle in a downward direction is impeded by the cap. A disk is attached to a lower portion of the shaft and is separated from a bottom of the baseplate due to weighted rings, which are attached to the disk and surround the lower portion of the shaft such that a vertical float is present between the shaft and the cap. At least one abrasive pad is attached to the disk to remove build-up on the underlying pedestal surface.

Abstract: A substrate support includes a body and a thermal void. The body is configured to support a substrate during processing of the substrate. The body includes plates including a top plate, a first intermediate plate, a second intermediate plate and a bottom plate. The plates are arranged to form a stack. The first intermediate plate is disposed on the second intermediate plate. The thermal void is defined by an upper surface of the second intermediate plate and at least one of a lower surface of the first intermediate plate or a lower surface of the top plate. The thermal void is annular-shaped.

Abstract: A heat shield structure for a substrate support in a substrate processing system includes an outer shield configured to surround a stem of the substrate support. The outer shield is further configured to define an inner volume between the outer shield and an upper portion of the stem and a lower surface of the substrate support and a vertical channel between the outer shield and a lower portion of the stem of the substrate support. The outer shield includes a cylindrical portion, a first lateral portion extending radially outward from the cylindrical portion, an angled portion extending radially outward and upward from the first lateral portion, and a second lateral portion extending radially outward from the angled portion.

Abstract: A cleaning apparatus for a vacuum pedestal and method of cleaning a pedestal used in semiconductor device fabrication are described. The apparatus has a baseplate, a collar attached to the baseplate, a cap disposed on the collar, and a shaft that extends from the collar through the cap, collar and baseplate. A manual rotatable handle is attached to a shaft portion that extends from the cap. Motion of the handle in a downward direction is impeded by the cap. A disk is attached to a lower portion of the shaft and is separated from a bottom of the baseplate due to weighted rings, which are attached to the disk and surround the lower portion of the shaft such that a vertical float is present between the shaft and the cap. At least one abrasive pad is attached to the disk to remove build-up on the underlying pedestal surface.

Abstract: A showerhead for a processing chamber comprises a metal plate attached to the processing chamber. a ceramic faceplate attached to the metal plate and including a plurality of gas outlets on a substrate-facing surface. and a metal ring surrounding the ceramic faceplate and attached to the processing chamber.

Abstract: A system to align a shadow ring on a substrate support includes a baseplate of the substrate support, an alignment recess defined within an upper surface of the baseplate, a shadow ring, an upper alignment groove defined in a lower surface of the shadow ring, an alignment block disposed within the alignment recess, and an alignment feature disposed between the shadow ring and the alignment block. The alignment feature extends into the upper alignment groove defined in the lower surface of the shadow ring.

Abstract: A pedestal comprises a base portion, a stem portion, and a heater arranged in the base portion. The stem portion has a first end attached to a center region of the base portion. The heater includes a first loop arranged in the center region of the base portion. A first perimeter of the first loop is less than or equal to a second perimeter of the first end of the stem portion.

Abstract: A base portion of a showerhead is made of a first metallic material, has a first surface including a gas inlet and a second surface, and includes passages. A faceplate is made of a second metallic material and has side surfaces attached to the second surface and has a bottom surface that along with the second surface define a plenum. The faceplate includes walls that extend from the bottom surface upwards through the plenum and that contact the second surface, and outlets arranged along the walls. A heater is disposed in a groove along a periphery of the base portion. A cooling plate is arranged on the first surface and includes a conduit for a coolant. A plate is made of a third material having a lower thermal conductivity than the first and second metallic materials and is arranged between the cooling plate and the base portion.

Abstract: A substrate support includes a body and a thermal void. The body is configured to support a substrate during processing of the substrate. The body includes plates including a top plate, a first intermediate plate, a second intermediate plate and a bottom plate. The plates are arranged to form a stack. The first intermediate plate is disposed on the second intermediate plate. The thermal void is defined by an upper surface of the second intermediate plate and at least one of a lower surface of the first intermediate plate or a lower surface of the top plate. The thermal void is annular-shaped.

Abstract: A heat shield structure for a substrate support in a substrate processing system includes an outer shield configured to surround a stem of the substrate support. The outer shield is further configured to define an inner volume between the outer shield and an upper portion of the stem and a lower surface of the substrate support and a vertical channel between the outer shield and a lower portion of the stem of the substrate support. The outer shield includes a cylindrical portion, a first lateral portion extending radially outward from the cylindrical portion, an angled portion extending radially outward and upward from the first lateral portion, and a second lateral portion extending radially outward from the angled portion.

Abstract: A cleaning apparatus for a vacuum pedestal and method of cleaning a pedestal used in semiconductor device fabrication are described. The apparatus has a baseplate, a collar attached to the baseplate, a cap disposed on the collar, and a shaft that extends from the collar through the cap, collar and baseplate. A manual rotatable handle is attached to a shaft portion that extends from the cap. Motion of the handle in a downward direction is impeded by the cap. A disk is attached to a lower portion of the shaft and is separated from a bottom of the baseplate due to weighted rings, which are attached to the disk and surround the lower portion of the shaft such that a vertical float is present between the shaft and the cap. At least one abrasive pad is attached to the disk to remove build-up on the underlying pedestal surface.

Abstract: A heat shield structure for a substrate support in a substrate processing system includes an outer shield configured to surround a stem of the substrate support. The outer shield is further configured to define an inner volume between the outer shield and an upper portion of the stem and a lower surface of the substrate support and a vertical channel between the outer shield and a lower portion of the stem of the substrate support. The outer shield includes a cylindrical portion, a first lateral portion extending radially outward from the cylindrical portion, an angled portion extending radially outward and upward from the first lateral portion, and a second lateral portion extending radially outward from the angled portion.

Abstract: A system includes a camera mounted external to and adjacent to a window of a processing chamber configured to process semiconductor substrates. The window allows the camera to view a component in the processing chamber. The camera is configured to generate a video signal indicative of a status of the component during a process being performed in the processing chamber. The system further includes a controller coupled to the processing chamber. The controller is configured to control the camera, process the video signal from the camera, determine the status of the component based on the processing of the video signal, and determine whether to terminate the process based on the status of the component.

Abstract: A system includes a camera mounted external to and adjacent to a window of a processing chamber configured to process semiconductor substrates. The window allows the camera to view a component in the processing chamber. The camera is configured to generate a video signal indicative of a status of the component during a process being performed in the processing chamber. The system further includes a controller coupled to the processing chamber. The controller is configured to control the camera, process the video signal from the camera, determine the status of the component based on the processing of the video signal, and determine whether to terminate the process based on the status of the component.

Abstract: A technique and apparatus for cleaning the underside of a pedestal in a single- or multi-station semiconductor processing chamber or tool are provided. Also provided is an integrated vacuum foreline manifold having symmetric flow path lengths that may be used in multi-station semiconductor processing chamber or tool.