Abstract: Improved edge rings with wafer-centering roller mechanisms are disclosed. The roller mechanisms of these apparatuses are equipped with spring-biased rollers that are urged radially inward such that the rollers may move radially inward or outward to compensate for differential temperature expansion between wafers and the edge ring over a large temperature range while still maintaining high placement accuracy at both high and low temperatures.

Abstract: Vapor accumulator reservoirs for semiconductor processing operations, such as atomic layer deposition operations, are provided. Such vapor accumulator reservoirs may include a perimeter plenum volume filled with an inert gas, which may reduce or prevent the leakage of external contaminants into a process gas. In some implementations, the reservoir may be constructed from corrosion-resistant materials to reduce internal contaminants into the process gas.

Abstract: A gas inlet valve with incompatible materials isolation is provided. The valve may include a piston that seals against a surface when in a closed position and that permits gas to flow through the valve and out the outlet port when in an open position. A bellows may protect the actuation mechanism of the piston from gas that may be present in the valve when the valve is in the open or closed position, and the piston may include a second seal interface that seals the bellows off from the gas flow area when the valve is in the open or closed position.

Abstract: The present inventors have conceived of a showerhead inlet with an annular plenum and radial flow paths into a central passage. A process gas, that may include a precursor and a carrier gas, may be flowed into the annular plenum. The annular plenum and central passage may contribute to the uniform mixing of the precursor and the carrier gas. Additionally, the radial passage may be angled upward to help more effectively purge any dead legs within the central passage. The central passage may also interface with a remote plasma source valve. The remote plasma source valve may control the flow of reactive species generated by a remote plasma source into the central passage.

Abstract: Vapor accumulator reservoirs for semiconductor processing operations, such as atomic layer deposition operations, are provided. Such vapor accumulator reservoirs may include an optical beam port to allow an optical beam to transit through the vapor and allow measurement of the vapor concentration in the reservoir. In some implementations, the reservoir may be integrated with a vacuum pumping manifold and the reservoir and manifold may be heated by a common heating system to prevent condensation of the vapor.

Abstract: An apparatus for semiconductor manufacturing is provided. The apparatus may include a gas distribution manifold. The gas distribution manifold may include a faceplate assembly having a backplate region, a faceplate region opposite the backplate region, and a first pattern of gas distribution holes. The gas distribution manifold may also include a temperature control assembly in thermally conductive contact with the face plate assembly. The temperature control assembly may include a cooling plate assembly, a heating plate assembly offset from the cooling plate assembly to form a gap, and a plurality of thermal chokes distributed within the gap.

Abstract: A gas inlet valve with incompatible materials isolation is provided. The valve may include a piston that seals against a surface when in a closed position and that permits gas to flow through the valve and out the outlet port when in an open position. A bellows may protect the actuation mechanism of the piston from gas that may be present in the valve when the valve is in the open or closed position, and the piston may include a second seal interface that seals the bellows off from the gas flow area when the valve is in the open or closed position.

Abstract: The present inventors have conceived of a showerhead inlet with an annular plenum and radial flow paths into a central passage. A process gas, that may include a precursor and a carrier gas, may be flowed into the annular plenum. The annular plenum and central passage may contribute to the uniform mixing of the precursor and the carrier gas. Additionally, the radial passage may be angled upward to help more effectively purge any dead legs within the central passage. The central passage may also interface with a remote plasma source valve. The remote plasma source valve may control the flow of reactive species generated by a remote plasma source into the central passage.