Abstract: A diffusion system to improve the efficiency, accuracy, and consistency of testing the release rate of an active ingredient in semisolid form through a membrane in between a dosage lid and a cell cap mounted on a cell in which a mixer is placed to mix the receptor medium in the cell as the semisolid diffuses through the membrane. The cell can be placed in a heating system to heat the samples. The cell has a sampling arm through which samples of the receptor medium can be extracted without opening the cell cap and dosage lid. The mixer may be cylindrical and may occupy a large surface area of the cell. The mixer may have grooves and other irregularities to increase turbulence while mixing. The system can be automated using an automated sampling and collection station.

Abstract: A diffusion system to improve the efficiency, accuracy, and consistency of testing the release rate of an active ingredient in semisolid form through a membrane in between a dosage lid and a cell cap mounted on a cell in which a mixer is placed to mix the receptor medium in the cell as the semisolid diffuses through the membrane. The cell can be placed in a heating system to heat the samples. The cell has a sampling arm through which samples of the receptor medium can be extracted without opening the cell cap and dosage lid. The mixer may be cylindrical and may occupy a large surface area of the cell. The mixer may have grooves and other irregularities to increase turbulence while mixing. The system can be automated using an automated sampling and collection station.

Abstract: A method of processing a wafer or other articles by horizontally transporting vertically oriented wafers into one or more process cells. A carrier is rotated from a substantially horizontal orientation to a substantially vertical orientation. A cathode assembly secures the wafer onto the carrier and electrically couples the wafer to a power supply.

Abstract: A method of processing wafers or other articles within a processing cell, entailing transporting a carrier supporting a vertically-oriented wafer horizontally through an inlet opening of a process cell, processing the vertically-oriented wafer within the process cell, and then transporting the carrier out of the process cell horizontally through an outlet opening of the process cell. In one exemplary implementation, the process performed within the cell is a pre-or post- treatment where the wafer is subjected to an acid solution treatment and/or a rinsing with de-ionized water treatment. In another exemplary implementation, the process performed within the process cell is an electroplating of the plating surface of the wafer. Additionally, a method of processing an empty carrier entailing transporting the carrier horizontally through an inlet opening of a process cell, processing the carrier within the process cell, and transporting the carrier out of the process cell horizontally through an outlet opening.

Abstract: A method of processing wafers or other articles within a processing cell, entailing transporting a carrier supporting a vertically-oriented wafer horizontally through an inlet opening of a process cell, processing the vertically-oriented wafer within the process cell, and then transporting the carrier out of the process cell horizontally through an outlet opening of the process cell. In one exemplary implementation, the process performed within the cell is a pre-or post-treatment where the wafer is subjected to an acid solution treatment and/or a rinsing with de-ionized water treatment. In another exemplary implementation, the process performed within the process cell is an electroplating of the plating surface of the wafer. Additionally, a method of processing an empty carrier entailing transporting the carrier horizontally through an inlet opening of a process cell, processing the carrier within the process cell, and transporting the carrier out of the process cell horizontally through an outlet opening.

Abstract: A process cell for processing wafers and other planar articles, including a horizontally-transportable carrier for supporting a wafer in a substantially vertical orientation and an enclosure for housing the carrier and performing one or more processes to the wafer. The enclosure including a carrier inlet to allow the horizontal passage of a carrier into the process cell and a carrier outlet to allow the horizontal passage of a carrier to outside of the process cell. One embodiment of a process cell is configured to perform a pre- or post-treatment of a wafer, such as treating the wafer with acid solution and/or with de-ionized water. Another embodiment of the process cell is configured to perform electroplating of the wafer. Another process cell is configured to the process empty carriers, including the striping of undesired plating deposition on cathode contacts.

Abstract: A method of processing a wafer or other articles by horizontally transporting vertically oriented wafers into one or more process cells. A carrier is rotated from a substantially horizontal orientation to a substantially vertical orientation. A cathode assembly secures the wafer onto the carrier and electrically couples the wafer to a power supply.

Abstract: A wafer processing system for performing horizontal transport of vertically-oriented wafers into one or more process cells to perform vertical processing on the wafers. The wafer processing system includes a loading station for loading wafers onto respective carriers in a horizontal fashion and for rotating the carriers to orient the wafers in a vertical orientation for transport and processing, one or more process cells for processing the wafers in a vertical orientation respectively therein, and an unloading station for rotating the carriers to orient the wafers from a vertical orientation to a horizontal orientation and for unloading the wafer off the carriers in a horizontal fashion. Additionally, the wafer processing system includes a carrier transport system for transporting carriers horizontally from the loading station, to one or more process cells, then to the unloading station, and additionally to a carrier process section for processing of empty carriers.

Abstract: A wafer process methodology characterized by horizontal transport of vertically-oriented wafers into one or more process cells for performing vertical processing on the wafers. The process methodology also includes simultaneous processing of a plurality of vertically-oriented wafers at indexed positions along the horizontal transportation route. Additionally, the process methodology further includes loading of wafers onto carriers in a horizontal fashion and then rotating the carriers to orient the wafers vertically for transport and processing.

Abstract: A wafer plating system horizontally transporting vertically oriented wafers into one or more process cells. The wafer processing system includes a carrier rotatable from a substantially horizontal orientation to a substantially vertical orientation. A cathode assembly secures the wafer onto the carrier and electrically couples the wafer to a power supply.

Abstract: A plating apparatus is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. With regard to improving the uniformity of the plating deposition, the plating apparatus and method effectuate random horizontal fluid flow within the bath to reduce the occurrence of relatively long horizontal fluid flow that causes non-uniform plating deposition across the surface of the wafer.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: An apparatus and method for inserting and removing a wafer into and from a plating apparatus, includes an elongated primary arm having a wafer seat for supporting the wafer, an elongated secondary arm for supporting the primary arm, and a mounting surface for supporting the secondary arm. The apparatus further includes a drive band mechanically coupled to the primary arm for causing the movement thereof. The drive band includes a portion wound around a drum that is driven by a motor. The motor, in rotating the drum, causes the drive band to move the primary arm along an axis between a retracted position wherein the primary arm, the secondary arm, and the mounting surface are in a stacked relationship, and an extended position wherein the secondary arm protrudes from the mounting surface along the axis, and the primary arm protrudes from the secondary arm along the axis.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformnity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.