Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The method can include forming a fin structure over a substrate. The fin structure can include a channel layer and a sacrificial layer. The method can further include forming a first recess structure in a first portion of the fin structure, forming a second recess structure in the sacrificial layer of a second portion of the fin structure, forming a dielectric layer in the first and second recess structures, and performing an oxygen-free cyclic etching process to etch the dielectric layer to expose the channel layer of the second portion of the fin structure. The oxygen-free cyclic etching process can include two etching processes to selectively etch the dielectric layer over the channel layer.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The method can include forming a fin structure over a substrate. The fin structure can include a channel layer and a sacrificial layer. The method can further include forming a first recess structure in a first portion of the fin structure, forming a second recess structure in the sacrificial layer of a second portion of the fin structure, forming a dielectric layer in the first and second recess structures, and performing an oxygen-free cyclic etching process to etch the dielectric layer to expose the channel layer of the second portion of the fin structure. The oxygen-free cyclic etching process can include two etching processes to selectively etch the dielectric layer over the channel layer.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The method can include forming a fin structure over a substrate. The fin structure can include a channel layer and a sacrificial layer. The method can further include forming a first recess structure in a first portion of the fin structure, forming a second recess structure in the sacrificial layer of a second portion of the fin structure, forming a dielectric layer in the first and second recess structures, and performing an oxygen-free cyclic etching process to etch the dielectric layer to expose the channel layer of the second portion of the fin structure. The oxygen-free cyclic etching process can include two etching processes to selectively etch the dielectric layer over the channel layer.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The method can include forming a fin structure over a substrate. The fin structure can include a channel layer and a sacrificial layer. The method can further include forming a first recess structure in a first portion of the fin structure, forming a second recess structure in the sacrificial layer of a second portion of the fin structure, forming a dielectric layer in the first and second recess structures, and performing an oxygen-free cyclic etching process to etch the dielectric layer to expose the channel layer of the second portion of the fin structure. The oxygen-free cyclic etching process can include two etching processes to selectively etch the dielectric layer over the channel layer.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The method can include forming a fin structure over a substrate. The fin structure can include a first channel layer and a sacrificial layer. The method can further include forming a first recess structure in a first portion of the fin structure, forming a second recess structure in the sacrificial layer of a second portion of the fin structure, forming a dielectric layer in the first and second recess structures, and performing an oxygen-free cyclic etching process to etch the dielectric layer to expose the channel layer of the second portion of the fin structure.

Abstract: Various implementations disclosed herein include a thermal management system suitable electronic devices. In some implementations, a thermal management system includes an air guide and a cage wall, which together provide: an air intake having a first airflow area to produce a first air pressure; an airflow constriction, following the air intake, having a second airflow area smaller than the first airflow area to produce a second air pressure, and defining a first region; and an outlet following the airflow constriction having a third airflow area greater than the second airflow area to produce a third air pressure. The device cage has at least one aperture in the first region. The second air pressure is less than the first air pressure and the third air pressure and is sufficiently low to draw heated air from within the device cage through the at least one aperture to be expelled through the outlet.

Abstract: Various implementations disclosed herein include a thermal management system suitable electronic devices. In some implementations, a thermal management system includes an air guide and a cage wall, which together provide: an air intake having a first airflow area to produce a first air pressure; an airflow constriction, following the air intake, having a second airflow area smaller than the first airflow area to produce a second air pressure, and defining a first region; and an outlet following the airflow constriction having a third airflow area greater than the second airflow area to produce a third air pressure. The device cage has at least one aperture in the first region. The second air pressure is less than the first air pressure and the third air pressure and is sufficiently low to draw heated air from within the device cage through the at least one aperture to be expelled through the outlet.

Abstract: Various implementations disclosed herein include a thermal management system suitable electronic devices. In some implementations, a thermal management system includes an air guide and a cage wall, which together provide: an air intake having a first airflow area to produce a first air pressure; an airflow constriction, following the air intake, having a second airflow area smaller than the first airflow area to produce a second air pressure, and defining a first region; and an outlet following the airflow constriction having a third airflow area greater than the second airflow area to produce a third air pressure. The device cage has at least one aperture in the first region. The second air pressure is less than the first air pressure and the third air pressure and is sufficiently low to draw heated air from within the device cage through the at least one aperture to be expelled through the outlet.

Abstract: Various implementations disclosed herein include a thermal management system suitable electronic devices. In some implementations, a thermal management system includes an air guide and a cage wall, which together provide: an air intake having a first airflow area to produce a first air pressure; an airflow constriction, following the air intake, having a second airflow area smaller than the first airflow area to produce a second air pressure, and defining a first region; and an outlet following the airflow constriction having a third airflow area greater than the second airflow area to produce a third air pressure. The device cage has at least one aperture in the first region. The second air pressure is less than the first air pressure and the third air pressure and is sufficiently low to draw heated air from within the device cage through the at least one aperture to be expelled through the outlet.

Abstract: A method and system for a GCF repo swap transaction includes generating an index using a limited set of GCF contracts, and using the index value as a value in a GCF repo swap. The index value may be used as a variable or floating value in the swap, or may be used at the fixed value in the swap.

Abstract: In order to adequately but not excessively or unnecessarily cool heat generating electrical components and decrease the noise produced by fans used to cool the heat generating electrical components in an electrical hardware system, an environmental controller controls the speeds of the fans using at least two temperature sensors. In one example, a first temperature sensor measures a hotspot component temperature and generates a hotspot component temperature value, and a second temperature sensor measures an air inlet temperature and generates an air inlet temperature value. The environmental controller controls the speeds of the fans based on the difference between the measured hotspot component temperature value and a target hotspot component temperature value calculated based on the measured air inlet temperature value and a predefined function.

Abstract: In order to adequately but not excessively or unnecessarily cool heat generating electrical components and decrease the noise produced by fans used to cool the heat generating electrical components in an electrical hardware system, an environmental controller controls the speeds of the fans using at least two temperature sensors. In one example, a first temperature sensor measures a hotspot component temperature and generates a hotspot component temperature value, and a second temperature sensor measures an air inlet temperature and generates an air inlet temperature value. The environmental controller controls the speeds of the fans based on the difference between the measured hotspot component temperature value and a target hotspot component temperature value calculated based on the measured air inlet temperature value and a predefined function.

Abstract: The invention relates to the production of alcohols by microbial fermentation, particularly to production of alcohols by microbial fermentation of substrates comprising CO. It more particularly relates to processes for the production of alcohols from their corresponding acids in the presence of a substrate comprising CO. In particular embodiments, a fermentation reaction producing acid(s) and optionally alcohol(s) is perturbed such that at least a portion one or more of acid(s) is converted to alcohol.

Abstract: The invention relates to the production of alcohols by microbial fermentation, particularly to production of alcohols by microbial fermentation of substrates comprising CO. It more particularly relates to processes for the production of alcohols from their corresponding acids in the presence of a substrate comprising CO. In particular embodiments, a fermentation reaction producing acid(s) and optionally alcohol(s) is perturbed such that at least a portion one or more of acid(s) is converted to alcohol.

Abstract: A bootstrap voltage generating circuit includes a bias circuit having a first end coupled to a first power source node having an operation voltage, and a second end coupled to a low voltage reference potential, wherein a voltage at the first end is related to the operation voltage in a non-linear way; a charging capacitor having a first end coupled to the load circuit; a charging path between a second end of the charging capacitor and the first end of the bias circuit, wherein the charging path is responsive to a clock signal; a discharging path between the second end of the charging capacitor and the low voltage reference potential, wherein the discharging path is responsive to the clock signal; and a switch circuit connected to the first end of the charging capacitor for setting a voltage thereon, wherein the switch circuit is responsive to the clock signal.

Abstract: A bootstrap voltage generating circuit includes a bias circuit having a first end coupled to a first power source node having an operation voltage, and a second end coupled to a low voltage reference potential, wherein a voltage at the first end is related to the operation voltage in a non-linear way; a charging capacitor having a first end coupled to the load circuit; a charging path between a second end of the charging capacitor and the first end of the bias circuit, wherein the charging path is responsive to a clock signal; a discharging path between the second end of the charging capacitor and the low voltage reference potential, wherein the discharging path is responsive to the clock signal; and a switch circuit connected to the first end of the charging capacitor for setting a voltage thereon, wherein the switch circuit is responsive to the clock signal.

Abstract: A method for negotiating speed between a Fibre Channel (FC) local client and a remote FC client across a DWDM network is provided. A transmission speed of the local FC client at a local ingress transport interface is detected. The data from the local FC client is forwarded along with the detected transmission speed to a remote egress transport interface. The remote egress interface forwards the data at the detected transmission speed to the remote FC client. The present invention eliminates complex speed negotiation state machines that would otherwise be required to make the DWDM transport behave like a virtual wire with respect to the FC ports and to allow the FC clients to negotiate the desired speed directly between themselves.

Abstract: A thermal interface material characterization system comprises two thermal heads. A thermal interface material is disposed between the thermal heads. A plurality of thermal sensors is disposed within one of the thermal heads. Another plurality of thermal sensors is disposed within the other thermal head. The thermal sensors generate temperature data along an axis in a direction of heat flow through the thermal heads. A thermal characteristic of the thermal interface material can be determined from the temperature data generated from the thermal sensors.

Abstract: Disclosed is a method, system, program, and data structure for controlling access to a sensitive function in a class. A friend object is generated indicating at least one external function from at least one external class external to the class including the sensitive function. A call from a calling function in a class external to the class including the sensitive function is processed and the calling function is permitted access to the sensitive function in response to determining that the friend object indicates that the calling function can access the sensitive function.