Patents by Inventor Gary Chunshien Wu

Gary Chunshien Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220416664
    Abstract: Circuits and methods for providing a “bootstrap” power supply for level-shifter/driver (LS/D) circuits in a FET-based power converter. In a first embodiment, linear regulators and a bootstrap capacitor provide a bootstrap power supply for level-shifter/driver circuits in each tier of a multi-level FET-based power converter. In a second embodiment, floating charge circuits and bootstrap capacitors provide an improved bootstrap power supply for level-shifter and driver circuits in each tier of a multi-level FET-based power converter. More particularly, a floating charge circuit configured to be coupled to an associated bootstrap capacitor includes a first sub-circuit configured to pre-charge the associated bootstrap capacitor when coupled and a second sub-circuit configured to transfer charge between the bootstrap capacitor and a bootstrap capacitor coupled to an adjacent floating charge circuit.
    Type: Application
    Filed: December 22, 2021
    Publication date: December 29, 2022
    Inventor: Gary Chunshien Wu
  • Patent number: 11277130
    Abstract: Systems, methods, and apparatus for biasing a high speed and high voltage driver using only low voltage transistors are described. The apparatus and method are adapted to control biasing voltages to the low voltage transistors such as not to exceed operating voltages of the low voltage transistors while allowing for DC to high speed operation of the driver at high voltage. A stackable and modular architecture of the driver and biasing stages is provided which can grow with a higher voltage requirement of the driver. Capacitive voltage division is used for high speed bias voltage regulation during transient phases of the driver, and resistive voltage division is used to provide bias voltage at steady state. A simpler open-drain configuration is also presented which can be used in pull-up or pull-down modes.
    Type: Grant
    Filed: September 15, 2020
    Date of Patent: March 15, 2022
    Assignee: pSemi Corporation
    Inventor: Gary Chunshien Wu
  • Publication number: 20220006382
    Abstract: Multi-level DC-to-DC converter circuits and methods that permit a full range of output voltages, including near and at zone boundaries. Embodiments alternate among adjacent or near-by zones, operating in a first zone for a selected time and then in a second zone for a selected time. Embodiments may include a parallel capacitor voltage balancing circuit that connects a capacitor to a source voltage to charge that capacitor, or couples two or more capacitors together to transfer charge, all under the control of real-time capacitor voltage measurements. Embodiments may include a lossless voltage balancing solution where out-of-order state transitions are allowed, thus increasing or decreasing the voltage across specific capacitors to prevent voltage overstress on the converter main switches. Restrictions may be placed on the overall sequence of state transitions to reduce or avoid transition state toggling, allowing each capacitor an opportunity to have its voltage steered as necessary for balancing.
    Type: Application
    Filed: July 15, 2021
    Publication date: January 6, 2022
    Inventors: Gary Chunshien Wu, David M. Giuliano, Gregory Szczeszynski
  • Publication number: 20210328584
    Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion (e.g. DC/DC) and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. According to an aspect, timing control of edges of a control signal to the high voltage semiconductor devices is provided by a basic edge delay circuit that includes a transistor, a current source and a capacitor. An inverter can be selectively coupled, via a switch, to an input and/or an output of the basic edge delay circuit to allow for timing control of a rising edge or a falling edge of the control signal.
    Type: Application
    Filed: April 8, 2021
    Publication date: October 21, 2021
    Inventor: Gary Chunshien Wu
  • Patent number: 10979042
    Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion (e.g. DC/DC) and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. According to an aspect, timing control of edges of a control signal to the high voltage semiconductor devices is provided by a basic edge delay circuit that includes a transistor, a current source and a capacitor. An inverter can be selectively coupled, via a switch, to an input and/or an output of the basic edge delay circuit to allow for timing control of a rising edge or a falling edge of the control signal.
    Type: Grant
    Filed: November 20, 2019
    Date of Patent: April 13, 2021
    Assignee: pSemi Corporation
    Inventor: Gary Chunshien Wu
  • Publication number: 20210067158
    Abstract: Systems, methods, and apparatus for biasing a high speed and high voltage driver using only low voltage transistors are described. The apparatus and method are adapted to control biasing voltages to the low voltage transistors such as not to exceed operating voltages of the low voltage transistors while allowing for DC to high speed operation of the driver at high voltage. A stackable and modular architecture of the driver and biasing stages is provided which can grow with a higher voltage requirement of the driver. Capacitive voltage division is used for high speed bias voltage regulation during transient phases of the driver, and resistive voltage division is used to provide bias voltage at steady state. A simpler open-drain configuration is also presented which can be used in pull-up or pull-down modes.
    Type: Application
    Filed: September 15, 2020
    Publication date: March 4, 2021
    Inventor: Gary Chunshien Wu
  • Patent number: 10784861
    Abstract: Systems, methods, and apparatus for biasing a high speed and high voltage driver using only low voltage transistors are described. The apparatus and method are adapted to control biasing voltages to the low voltage transistors such as not to exceed operating voltages of the low voltage transistors while allowing for DC to high speed operation of the driver at high voltage. A stackable and modular architecture of the driver and biasing stages is provided which can grow with a higher voltage requirement of the driver. Capacitive voltage division is used for high speed bias voltage regulation during transient phases of the driver, and resistive voltage division is used to provide bias voltage at steady state. A simpler open-drain configuration is also presented which can be used in pull-up or pull-down modes.
    Type: Grant
    Filed: November 27, 2018
    Date of Patent: September 22, 2020
    Assignee: pSemi Corporation
    Inventor: Gary Chunshien Wu
  • Patent number: 10770974
    Abstract: Multi-level DC-to-DC converter circuits and methods that permit a full range of output voltages, including near and at zone boundaries. Embodiments alternate among adjacent or near-by zones, operating in a first zone for a selected time and then in a second zone for a selected time. Embodiments may include a parallel capacitor voltage balancing circuit that connects a capacitor to a source voltage to charge that capacitor, or couples two or more capacitors together to transfer charge, all under the control of real-time capacitor voltage measurements. Embodiments may include a lossless voltage balancing solution where out-of-order state transitions are allowed, thus increasing or decreasing the voltage across specific capacitors to prevent voltage overstress on the converter main switches. Restrictions may be placed on the overall sequence of state transitions to reduce or avoid transition state toggling, allowing each capacitor an opportunity to have its voltage steered as necessary for balancing.
    Type: Grant
    Filed: January 16, 2019
    Date of Patent: September 8, 2020
    Assignee: pSemi Corporation
    Inventors: Gary Chunshien Wu, David M. Giuliano, Gregory Szczeszynski
  • Patent number: 10720843
    Abstract: Multi-level DC-to-DC converter circuits and methods that permit a full range of output voltages, including near and at zone boundaries. Embodiments alternate among adjacent or near-by zones, operating in a first zone for a selected time and then in a second zone for a selected time. Embodiments may include a parallel capacitor voltage balancing circuit that connects a capacitor to a source voltage to charge that capacitor, or couples two or more capacitors together to transfer charge, all under the control of real-time capacitor voltage measurements. Embodiments may include a lossless voltage balancing solution where out-of-order state transitions are allowed, thus increasing or decreasing the voltage across specific capacitors to prevent voltage overstress on the converter main switches. Restrictions may be placed on the overall sequence of state transitions to reduce or avoid transition state toggling, allowing each capacitor an opportunity to have its voltage steered as necessary for balancing.
    Type: Grant
    Filed: January 16, 2019
    Date of Patent: July 21, 2020
    Assignee: pSemi Corporation
    Inventors: Gary Chunshien Wu, David M. Giuliano, Gregory Szczeszynski
  • Patent number: 10720842
    Abstract: Multi-level DC-to-DC converter circuits and methods that permit a full range of output voltages, including near and at zone boundaries. Embodiments alternate among adjacent or near-by zones, operating in a first zone for a selected time and then in a second zone for a selected time. Embodiments may include a parallel capacitor voltage balancing circuit that connects a capacitor to a source voltage to charge that capacitor, or couples two or more capacitors together to transfer charge, all under the control of real-time capacitor voltage measurements. Embodiments may include a lossless voltage balancing solution where out-of-order state transitions are allowed, thus increasing or decreasing the voltage across specific capacitors to prevent voltage overstress on the converter main switches. Restrictions may be placed on the overall sequence of state transitions to reduce or avoid transition state toggling, allowing each capacitor an opportunity to have its voltage steered as necessary for balancing.
    Type: Grant
    Filed: January 16, 2019
    Date of Patent: July 21, 2020
    Assignee: pSemi Corporation
    Inventors: Gary Chunshien Wu, David M. Giuliano, Gregory Szczeszynski
  • Publication number: 20200228015
    Abstract: Multi-level DC-to-DC converter circuits and methods that permit a full range of output voltages, including near and at zone boundaries. Embodiments alternate among adjacent or near-by zones, operating in a first zone for a selected time and then in a second zone for a selected time. Embodiments may include a parallel capacitor voltage balancing circuit that connects a capacitor to a source voltage to charge that capacitor, or couples two or more capacitors together to transfer charge, all under the control of real-time capacitor voltage measurements. Embodiments may include a lossless voltage balancing solution where out-of-order state transitions are allowed, thus increasing or decreasing the voltage across specific capacitors to prevent voltage overstress on the converter main switches. Restrictions may be placed on the overall sequence of state transitions to reduce or avoid transition state toggling, allowing each capacitor an opportunity to have its voltage steered as necessary for balancing.
    Type: Application
    Filed: January 16, 2019
    Publication date: July 16, 2020
    Inventors: Gary Chunshien Wu, David M. Giuliano, Gregory Szczeszynski
  • Publication number: 20200228014
    Abstract: Multi-level DC-to-DC converter circuits and methods that permit a full range of output voltages, including near and at zone boundaries. Embodiments alternate among adjacent or near-by zones, operating in a first zone for a selected time and then in a second zone for a selected time. Embodiments may include a parallel capacitor voltage balancing circuit that connects a capacitor to a source voltage to charge that capacitor, or couples two or more capacitors together to transfer charge, all under the control of real-time capacitor voltage measurements. Embodiments may include a lossless voltage balancing solution where out-of-order state transitions are allowed, thus increasing or decreasing the voltage across specific capacitors to prevent voltage overstress on the converter main switches. Restrictions may be placed on the overall sequence of state transitions to reduce or avoid transition state toggling, allowing each capacitor an opportunity to have its voltage steered as necessary for balancing.
    Type: Application
    Filed: January 16, 2019
    Publication date: July 16, 2020
    Inventors: Gary Chunshien Wu, David M. Giuliano, Gregory Szczeszynski
  • Publication number: 20200228016
    Abstract: Multi-level DC-to-DC converter circuits and methods that permit a full range of output voltages, including near and at zone boundaries. Embodiments alternate among adjacent or near-by zones, operating in a first zone for a selected time and then in a second zone for a selected time. Embodiments may include a parallel capacitor voltage balancing circuit that connects a capacitor to a source voltage to charge that capacitor, or couples two or more capacitors together to transfer charge, all under the control of real-time capacitor voltage measurements. Embodiments may include a lossless voltage balancing solution where out-of-order state transitions are allowed, thus increasing or decreasing the voltage across specific capacitors to prevent voltage overstress on the converter main switches. Restrictions may be placed on the overall sequence of state transitions to reduce or avoid transition state toggling, allowing each capacitor an opportunity to have its voltage steered as necessary for balancing.
    Type: Application
    Filed: January 16, 2019
    Publication date: July 16, 2020
    Inventors: Gary Chunshien Wu, David M. Giuliano, Gregory Szczeszynski
  • Publication number: 20200162069
    Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion (e.g. DC/DC) and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. According to an aspect, timing control of edges of a control signal to the high voltage semiconductor devices is provided by a basic edge delay circuit that includes a transistor, a current source and a capacitor. An inverter can be selectively coupled, via a switch, to an input and/or an output of the basic edge delay circuit to allow for timing control of a rising edge or a falling edge of the control signal.
    Type: Application
    Filed: November 20, 2019
    Publication date: May 21, 2020
    Inventor: Gary Chunshien Wu
  • Publication number: 20190363710
    Abstract: Systems, methods, and apparatus for biasing a high speed and high voltage driver using only low voltage transistors are described. The apparatus and method are adapted to control biasing voltages to the low voltage transistors such as not to exceed operating voltages of the low voltage transistors while allowing for DC to high speed operation of the driver at high voltage. A stackable and modular architecture of the driver and biasing stages is provided which can grow with a higher voltage requirement of the driver. Capacitive voltage division is used for high speed bias voltage regulation during transient phases of the driver, and resistive voltage division is used to provide bias voltage at steady state. A simpler open-drain configuration is also presented which can be used in pull-up or pull-down modes.
    Type: Application
    Filed: November 27, 2018
    Publication date: November 28, 2019
    Inventor: Gary Chunshien Wu
  • Patent number: 10348293
    Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion (e.g. DC/DC) and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. According to an aspect, timing control of edges of a control signal to the high voltage semiconductor devices is provided by a basic edge delay circuit that includes a transistor, a current source and a capacitor. An inverter can be selectively coupled, via a switch, to an input and/or an output of the basic edge delay circuit to allow for timing control of a rising edge or a falling edge of the control signal.
    Type: Grant
    Filed: June 18, 2018
    Date of Patent: July 9, 2019
    Assignee: pSemi Corporation
    Inventors: Buddhika Abesingha, Merlin Green, Gary Chunshien Wu
  • Publication number: 20190140635
    Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion (e.g. DC/DC) and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. According to an aspect, timing control of edges of a control signal to the high voltage semiconductor devices is provided by a basic edge delay circuit that includes a transistor, a current source and a capacitor. An inverter can be selectively coupled, via a switch, to an input and/or an output of the basic edge delay circuit to allow for timing control of a rising edge or a falling edge of the control signal.
    Type: Application
    Filed: June 18, 2018
    Publication date: May 9, 2019
    Inventors: Buddhika Abesingha, Merlin Green, Gary Chunshien Wu
  • Patent number: 10171075
    Abstract: Systems, methods, and apparatus for biasing a high speed and high voltage driver using only low voltage transistors are described. The apparatus and method are adapted to control biasing voltages to the low voltage transistors such as not to exceed operating voltages of the low voltage transistors while allowing for DC to high speed operation of the driver at high voltage. A stackable and modular architecture of the driver and biasing stages is provided which can grow with a higher voltage requirement of the driver. Capacitive voltage division is used for high speed bias voltage regulation during transient phases of the driver, and resistive voltage division is used to provide bias voltage at steady state. A simpler open-drain configuration is also presented which can be used in pull-up or pull-down modes.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: January 1, 2019
    Assignee: pSemi Corporation
    Inventor: Gary Chunshien Wu
  • Patent number: 10116297
    Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion (e.g. DC/DC) and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. A parallel resistive-capacitive coupling allows transmission of edge information and DC level information of control signals from a static voltage domain to a flying voltage domain. A flying comparator operating in the flying voltage domain uses clamps to force an output difference voltage that is zero only during a switching event of the flying voltage domain. A charge pump may be used to amplify inputs to the parallel-resistive coupling for a desired differential signal amplitude to the flying comparator.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: October 30, 2018
    Assignee: pSemi Corporation
    Inventor: Gary Chunshien Wu
  • Patent number: 10084443
    Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion (e.g. DC/DC) and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. A parallel resistive-capacitive coupling allows transmission of edge information and DC level information of control signals from a static voltage domain to a flying voltage domain. A flying comparator operating in the flying voltage domain uses clamps to force an output difference voltage that is zero only during a switching event of the flying voltage domain. A charge pump may be used to amplify inputs to the parallel-resistive coupling for a desired differential signal amplitude to the flying comparator.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: September 25, 2018
    Assignee: pSemi Corporation
    Inventor: Gary Chunshien Wu