Patents by Inventor Gary Coultart

Gary Coultart has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ALUMINUM PASTES AND USE THEREOF IN THE PRODUCTION OF PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELLS
    Publication number: 20170077324
    Abstract: An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO2, >0 to 7 wt.-% of Al2O3 and 2 to 10 wt.-% of B2O3 and (ii) lead-containing glass frits with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3, useful in the production of aluminum back electrodes of PERC silicon solar cells.
    Type: Application
    Filed: February 18, 2015
    Publication date: March 16, 2017
    Applicant: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Alistair Graeme Prince, Richard John Sheffield Young, Giovanna Laudisio, Gary Coultart, Kenneth Warren Hang, Ben Whittle
  • ALUMINUM PASTES AND USE THEREOF IN THE PRODUCTION OF PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELLS
    Publication number: 20160240706
    Abstract: An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO2, >0 to 7 wt.-% of Al2O3 and 2 to 10 wt.-% of B2O3 and (ii) lead-containing glass frits with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3, useful in the production of aluminum back electrodes of PERC silicon solar cells.
    Type: Application
    Filed: February 18, 2015
    Publication date: August 18, 2016
    Applicant: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Alistair Graeme Prince, Richard John Sheffield Young, Giovanna Laudisio, Gary Coultart, Kenneth Warren Hang, Ben Whittle
  • Process for the formation of a silver back electrode of a passivated emitter and rear contact silicon solar cell
    Patent number: 9343194
    Abstract: A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps: (1) providing a silicon wafer having an ARC layer on its front-side and a perforated dielectric passivation layer on its back-side, (2) applying and drying a silver paste to form a silver back electrode pattern on the perforated dielectric passivation layer on the back-side of the silicon wafer, and (3) firing the dried silver paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the silver paste has no or only poor fire-through capability and comprises particulate silver and an organic vehicle.
    Type: Grant
    Filed: November 24, 2010
    Date of Patent: May 17, 2016
    Assignee: EI DU PONT DE NEMOURS AND COMPANY
    Inventors: Alistair Graeme Prince, Richard John Sheffield Young, Giovanna Laudisio, Gary Coultart, Kenneth Warren Hang, Ben Whittle
  • Aluminum pastes and use thereof in the production of passivated emitter and rear contact silicon solar cells
    Patent number: 8999203
    Abstract: An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO2, >0 to 7 wt.-% of Al2O3 and 2 to 10 wt.-% of B2O3 and (ii) lead-containing glass frits with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3, useful in the production of aluminum back electrodes of PERC silicon solar cells.
    Type: Grant
    Filed: November 23, 2010
    Date of Patent: April 7, 2015
    Assignee: E I du Pont de Nemours and Company
    Inventors: Alistair Graeme Prince, Richard John Sheffield Young, Giovanna Laudisio, Gary Coultart, Kenneth Warren Hang, Ben Whittle
  • PROCESS FOR THE FORMATION OF A SILVER BACK ELECTRODE OF A PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELL
    Publication number: 20110120551
    Abstract: A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps: (1) providing a silicon wafer having an ARC layer on its front-side and a perforated dielectric passivation layer on its back-side, (2) applying and drying a silver paste to form a silver back electrode pattern on the perforated dielectric passivation layer on the back-side of the silicon wafer, and (3) firing the dried silver paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the silver paste has no or only poor fire-through capability and comprises particulate silver and an organic vehicle.
    Type: Application
    Filed: November 24, 2010
    Publication date: May 26, 2011
    Applicant: E. I. DU PONT DE NEMOURS AND COMPANY
    Inventors: Alistair Graeme Prince, Richard John Sheffield Young, Giovanna Laudisio, Gary Coultart, Kenneth Warren Hang, Ben Whittle
  • ALUMINUM PASTES AND USE THEREOF IN THE PRODUCTION OF PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELLS
    Publication number: 20110120535
    Abstract: An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO2, >0 to 7 wt.-% of Al2O3 and 2 to 10 wt.-% of B2O3 and (ii) lead-containing glass frits with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3, useful in the production of aluminum back electrodes of PERC silicon solar cells.
    Type: Application
    Filed: November 23, 2010
    Publication date: May 26, 2011
    Applicant: E.I. DU PONT DE NEMOURS AND COMPANY
    Inventors: Alistair Graeme Prince, Richard John Sheffield Young, Glovanna Laudisio, Gary Coultart, Kenneth Warren Hang, Ben Whittle
  • METAL PASTES AND USE THEREOF IN THE PRODUCTION OF POSITIVE ELECTRODES ON P-TYPE SILICON SURFACES
    Publication number: 20100269893
    Abstract: Metal pastes comprising (a) at least one electrically conductive metal powder selected from the group consisting of silver, copper, and nickel, (b) at least one p-type silicon alloy powder, and (c) an organic vehicle, wherein the p-type silicon alloy is selected from the group consisting of alloys comprising silicon and boron, alloys comprising silicon and aluminum and alloys comprising silicon, boron and aluminum.
    Type: Application
    Filed: April 23, 2010
    Publication date: October 28, 2010
    Applicant: E. I. DU PONT DE NEMOURS AND COMPANY
    Inventors: Alistair Graeme Prince, Richard John Sheffield Young, Giovanna Laudisio, Gary Coultart