Patents by Inventor Gary Ding

Gary Ding has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multi-platen multi-slurry chemical mechanical polishing process
    Patent number: 7125321
    Abstract: A multi-platen, multi-slurry chemical mechanical polishing method comprises providing a substrate having a surface that includes at least one nitride structure and an oxide layer atop the nitride structure, performing a first CMP process on the substrate using a first platen with a silica based slurry to remove a bulk portion of the oxide layer without exposing the nitride structure, performing a second CMP process on the substrate using a second platen with a ceria based slurry to remove a residual portion of the oxide layer and to expose at least a portion of the nitride structure, and performing a third CMP process on the substrate using the first platen with a silica based slurry to remove at least one defect caused by the ceria based slurry.
    Type: Grant
    Filed: December 17, 2004
    Date of Patent: October 24, 2006
    Assignee: Intel Corporation
    Inventors: Matthew J Prince, Mansour Moinpour, Francis M Tambwe, Gary Ding
  • Multi-platen multi-slurry chemical mechanical polishing process
    Publication number: 20060135046
    Abstract: A multi-platen, multi-slurry chemical mechanical polishing method comprises providing a substrate having a surface that includes at least one nitride structure and an oxide layer atop the nitride structure, performing a first CMP process on the substrate using a first platen with a silica based slurry to remove a bulk portion of the oxide layer without exposing the nitride structure, performing a second CMP process on the substrate using a second platen with a ceria based slurry to remove a residual portion of the oxide layer and to expose at least a portion of the nitride structure, and performing a third CMP process on the substrate using the first platen with a silica based slurry to remove at least one defect caused by the ceria based slurry.
    Type: Application
    Filed: December 17, 2004
    Publication date: June 22, 2006
    Inventors: Matthew Prince, Mansour Moinpour, Francis Tambwe, Gary Ding