Patents by Inventor Gary E. Ruland
Gary E. Ruland has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240287705Abstract: The present disclosure generally relates to a physical vapor transport system including a chamber, a growth crucible positioned within the chamber, the growth crucible sealable with a growth crucible lid, and a doping capsule positioned within the growth crucible. The doping capsule includes an outer crucible fitted with an outer crucible lid, an inner crucible fitted with an inner crucible lid, the inner crucible fitted with the inner crucible lid positioned within the outer crucible, and a capillary channel formed by a first aperture in the outer crucible lid and a second aperture in the inner crucible lid.Type: ApplicationFiled: May 3, 2024Publication date: August 29, 2024Inventors: Ilya Zwieback, Varatharajan Rengarajan, Andrew E. Souzis, Gary E. Ruland
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Patent number: 12006591Abstract: The present disclosure generally relates to silicon carbide crystals which may be used in optical applications, and to methods for producing the same. In one form, a composition includes an aluminum doped silicon carbide crystal having residual nitrogen and boron impurities. The concentration of aluminum in the silicon carbide crystal is greater than the combined concentrations of nitrogen and boron in the silicon carbide crystal, and the silicon carbide crystal includes an optical absorption coefficient of less than about 0.4 cm?1 at a wavelength in a range between about 400 nm to about 800 nm.Type: GrantFiled: September 23, 2020Date of Patent: June 11, 2024Assignee: II-VI ADVANCED MATERIALS, LLCInventors: Ilya Zwieback, Varatharajan Rengarajan, Andrew E. Souzis, Gary E. Ruland
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Publication number: 20210269937Abstract: The present disclosure generally relates to silicon carbide crystals which may be used in optical applications, and to methods for producing the same. In one form, a composition includes an aluminum doped silicon carbide crystal having residual nitrogen and boron impurities. The concentration of aluminum in the silicon carbide crystal is greater than the combined concentrations of nitrogen and boron in the silicon carbide crystal, and the silicon carbide crystal includes an optical absorption coefficient of less than about 0.4 cm?1 at a wavelength in a range between about 400 nm to about 800 nm.Type: ApplicationFiled: September 23, 2020Publication date: September 2, 2021Inventors: Ilya Zwieback, Varatharajan Rengarajan, Andrew N. Souzis, Gary E. Ruland
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Patent number: 10793972Abstract: A physical vapor transport (PVT) apparatus suitable for growing SiC boules comprises a crystal growth chamber (with a defined central vertical axis), a sealed crucible containing sublimation source material and including a seed fixture disposed in an offset position with respect to the central vertical axis of the apparatus, and a heat source disposed to surround the crystal growth chamber. The heat source is configured to raise the temperature within the sealed crucible such that the source material vaporizes and deposits on the seed wafer. The offset position of the seed fixture creates a radial temperature gradient across an exposed surface of the seed as the crystal boule is grown.Type: GrantFiled: July 10, 2018Date of Patent: October 6, 2020Assignee: II-VI Delaware, Inc.Inventors: Xueping Xu, Avinash Gupta, Mark Ramm, Ilya Zwieback, Varatharajan Rengarajan, Gary E. Ruland
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Patent number: 9388509Abstract: In a method of forming polycrystalline SiC grain material, low-density, gas-permeable and vapor-permeable bulk carbon is positioned at a first location inside of a graphite crucible and a mixture of elemental silicon and elemental carbon is positioned at a second location inside of the graphite crucible. Thereafter, the mixture and the bulk carbon are heated to a first temperature below the melting point of the elemental Si to remove adsorbed gas, moisture and/or volatiles from the mixture and the bulk carbon. Next, the mixture and the bulk carbon are heated to a second temperature that causes the elemental Si and the elemental C to react forming as-synthesized SiC inside of the crucible. The as-synthesized SiC and the bulk carbon are then heated in a way to cause the as-synthesized SiC to sublime and produce vapors that migrate into, condense on and react with the bulk carbon forming polycrystalline SiC material.Type: GrantFiled: July 26, 2013Date of Patent: July 12, 2016Assignee: II-VI IncorporatedInventors: Ilya Zwieback, Avinash K. Gupta, Ping Wu, Donovan L. Barrett, Gary E. Ruland, Thomas E. Anderson
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Patent number: 9322110Abstract: A sublimation grown SiC single crystal includes vanadium dopant incorporated into the SiC single crystal structure via introduction of a gaseous vanadium compound into a growth environment of the SiC single crystal during growth of the SiC single crystal.Type: GrantFiled: October 28, 2013Date of Patent: April 26, 2016Assignee: II-VI IncorporatedInventors: Ilya Zwieback, Thomas E. Anderson, Avinash K. Gupta, Michael C. Nolan, Bryan K. Brouhard, Gary E. Ruland
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Patent number: 9090989Abstract: In a crystal growth apparatus and method, polycrystalline source material and a seed crystal are introduced into a growth ambient comprised of a growth crucible disposed inside of a furnace chamber. In the presence of a first sublimation growth pressure, a single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a first gas that includes a reactive component that reacts with and removes donor and/or acceptor background impurities from the growth ambient during said sublimation growth. Then, in the presence of a second sublimation growth pressure, the single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a second gas that includes dopant vapors, but which does not include the reactive component.Type: GrantFiled: May 24, 2013Date of Patent: July 28, 2015Assignee: II-VI IncorporatedInventors: Ilya Zwieback, Ping Wu, Varatharajan Rengarajan, Avinash K. Gupta, Thomas E. Anderson, Gary E. Ruland, Andrew E. Souzis, Xueping Xu
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Publication number: 20140234194Abstract: A sublimation grown SiC single crystal includes vanadium dopant incorporated into the SiC single crystal structure via introduction of a gaseous vanadium compound into a growth environment of the SiC single crystal during growth of the SiC single crystal.Type: ApplicationFiled: October 28, 2013Publication date: August 21, 2014Applicant: II-VI IncorporatedInventors: Ilya Zwieback, Thomas E. Anderson, Avinash K. Gupta, Michael C. Nolan, Bryan K. Brouhard, Gary E. Ruland
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Patent number: 8741413Abstract: A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.Type: GrantFiled: April 22, 2013Date of Patent: June 3, 2014Assignee: II-VI IncorporatedInventors: Ilya Zwieback, Thomas E. Anderson, Andrew E. Souzis, Gary E. Ruland, Avinash K. Gupta, Varatharajan Rengarajan, Ping Wu, Xueping Xu
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Publication number: 20130320275Abstract: In a crystal growth apparatus and method, polycrystalline source material and a seed crystal are introduced into a growth ambient comprised of a growth crucible disposed inside of a furnace chamber. In the presence of a first sublimation growth pressure, a single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a first gas that includes a reactive component that reacts with and removes donor and/or acceptor background impurities from the growth ambient during said sublimation growth. Then, in the presence of a second sublimation growth pressure, the single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a second gas that includes dopant vapors, but which does not include the reactive component.Type: ApplicationFiled: May 24, 2013Publication date: December 5, 2013Inventors: Ilya Zwieback, Ping Wu, Varatharajan Rengarajan, Avinash K. Gupta, Thomas E. Anderson, Gary E. Ruland, Andrew E. Souzis, Xueping Xu
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Publication number: 20130309496Abstract: In a method of forming polycrystalline SiC grain material, low-density, gas-permeable and vapor-permeable bulk carbon is positioned at a first location inside of a graphite crucible and a mixture of elemental silicon and elemental carbon is positioned at a second location inside of the graphite crucible. Thereafter, the mixture and the bulk carbon are heated to a first temperature below the melting point of the elemental Si to remove adsorbed gas, moisture and/or volatiles from the mixture and the bulk carbon. Next, the mixture and the bulk carbon are heated to a second temperature that causes the elemental Si and the elemental C to react forming as-synthesized SiC inside of the crucible. The as-synthesized SiC and the bulk carbon are then heated in a way to cause the as-synthesized SiC to sublime and produce vapors that migrate into, condense on and react with the bulk carbon forming polycrystalline SiC material.Type: ApplicationFiled: July 26, 2013Publication date: November 21, 2013Applicant: II-VI IncorporatedInventors: Ilya Zwieback, Avinash K. Gupta, Ping Wu, Donovan L. Barrett, Gary E. Ruland, Thomas E. Anderson
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Publication number: 20130280466Abstract: A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.Type: ApplicationFiled: April 22, 2013Publication date: October 24, 2013Inventors: Ilya Zwieback, Thomas E. Anderson, Andrew E. Souzis, Gary E. Ruland, Avinash K. Gupta, Varatharajan Rengarajan, Ping Wu, Xueping Xu
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Patent number: 5912257Abstract: Styryl dyes and compositions which exhibit superior two-photon absorption cross-sections and are useful in two-photon pumped cavity lasing, two-photon pumped upconversion lasing, optical power limiting, optical power stabilization, optical signal reshaping, and infrared beam detection and indication are disclosed. Also disclosed are multiphasic nanostructured composites which include a glass having pores, an optically active coating material on the pore surface, and a polymeric material in the pores. These composites are useful in producing multifunctional optical materials, such as broadly tunable lasers. Methods for killing cells and viruses using a photosensitizer and a two-photon upconverting dye are also described. These methods are especially useful to kill cells and viruses in biological materials, such as in photodynamic therapy of tumors and cancers or blood purification protocols.Type: GrantFiled: September 5, 1996Date of Patent: June 15, 1999Assignee: The Research Foundation of State university of New YorkInventors: Paras N. Prasad, Jayant D. Bhawalkar, Guang S. He, Chan F. Zhao, Raz Gvishi, Gary E. Ruland, Jaroslaw Zieba, Ping Chin Cheng, Shan Jen Pan
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Patent number: RE46315Abstract: A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.Type: GrantFiled: October 6, 2014Date of Patent: February 21, 2017Assignee: II-VI IncorporatedInventors: Ilya Zwieback, Thomas E. Anderson, Andrew E. Souzis, Gary E. Ruland, Avinash K. Gupta, Varatharajan Rengarajan, Ping Wu, Xueping Xu
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Patent number: RE48378Abstract: In a crystal growth apparatus and method, polycrystalline source material and a seed crystal are introduced into a growth ambient comprised of a growth crucible disposed inside of a furnace chamber. In the presence of a first sublimation growth pressure, a single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a first gas that includes a reactive component that reacts with and removes donor and/or acceptor background impurities from the growth ambient during said sublimation growth. Then, in the presence of a second sublimation growth pressure, the single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a second gas that includes dopant vapors, but which does not include the reactive component.Type: GrantFiled: May 1, 2017Date of Patent: January 5, 2021Assignee: II-VI Delaware, Inc.Inventors: Ilya Zwieback, Ping Wu, Varatharajan Rengarajan, Avinash K. Gupta, Thomas E. Anderson, Gary E. Ruland, Andrew E. Souzis, Xueping Xu