Abstract: An improved system for measuring the temperature of a plurality of workpieces in a rotating semiconductor processing device is disclosed. Because silicon has variable emissivity in the infrared band, a temperature stable, high emissivity coating is applied to a portion of the workpiece, allowing the temperature of the workpiece to be measured by observing the temperature of the coating. Further, by limiting the amount of coating applied to the workpiece, the effect of the coating on the intrinsic temperature of the workpiece and the surrounding semiconductor processing device may be minimized. The temperature of the workpieces is measured as the workpieces pass under an aperture by capturing a thermal image of a portion of the workpiece. In certain embodiments, a controller is used to process the plurality of thermal images into a single thermal image showing all of the workpieces disposed within the semiconductor processing device.

Abstract: An improved system for measuring the temperature of a plurality of workpieces in a rotating semiconductor processing device is disclosed. Because silicon has variable emissivity in the infrared band, a temperature stable, high emissivity coating is applied to a portion of the workpiece, allowing the temperature of the workpiece to be measured by observing the temperature of the coating. Further, by limiting the amount of coating applied to the workpiece, the effect of the coating on the intrinsic temperature of the workpiece and the surrounding semiconductor processing device may be minimized. The temperature of the workpieces is measured as the workpieces pass under an aperture by capturing a thermal image of a portion of the workpiece. In certain embodiments, a controller is used to process the plurality of thermal images into a single thermal image showing all of the workpieces disposed within the semiconductor processing device.

Abstract: A system for heating substrates within a chamber, which may be maintained at vacuum conditions, is disclosed. The LED substrate heater comprises a base having a recessed portion surrounded by sidewalls. A plurality of light emitting diodes (LEDs) are disposed within the recessed portion. The LEDs may be GaN or GaP LEDs, which emit light at a wavelength which is readily absorbed by silicon or a coating on the silicon, thus efficiently and quickly heating the substrate. A transparent window is disposed over the recessed portion, forming a sealed enclosure in which the LEDs are disposed. A sealing gasket may be disposed between the sidewalls and the window.