Patents by Inventor Gary Elder McGuire
Gary Elder McGuire has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210245112Abstract: A mixed matrix membrane comprises a support structure. The support structure comprises a glassy polymer matrix, and nanodiamond particles dispersed within the glassy polymer matrix. A gas separation membrane apparatus, a gaseous fluid treatment system, and a method of forming a mixed matrix membrane are also described.Type: ApplicationFiled: February 12, 2021Publication date: August 12, 2021Inventors: Frederick F. Stewart, Christopher J. Orme, John R. Klaehn, Birendra Adhikari, Olga Aleksandrovna Shenderova, Nicholas Austin Nunn, Marco D. Torelli, Gary Elder McGuire, Tae H. Lee, Uthamalingam Balachandran
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Patent number: 10793795Abstract: A fuel additive composition has a base fuel; colloidal nanocarbon particles, and a dispersion stabilizer that aids in stably suspending the colloidal nanocarbon particles in the base fuel. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.Type: GrantFiled: February 4, 2015Date of Patent: October 6, 2020Assignee: Adámas Nanotechnologies, Inc.Inventors: Olga Aleksandrovna Shenderova, Michail Grigorievich Ivanov, Gary Elder McGuire, Denis Ivanov
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Patent number: 9368313Abstract: An integrated pressurized electronic power amplifier circuit including a plasma cathode structure and beam focusing approach leading to an electron beam, an interaction region; an input signal line for conducting an input signal into the interaction region; an output signal line for conducting an output signal from the interaction region; a collector for the electron beam; and an envelope for maintaining a pressurized ambient and a substrate for selected spatial alignment and thermal management; and wherein the plasma cathode structure generates a plasma as a source of electrons. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.Type: GrantFiled: June 4, 2013Date of Patent: June 14, 2016Assignee: International Technology CenterInventor: Gary Elder McGuire
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Patent number: 8475879Abstract: Polymer nanocomposites with improved resistance to high energy ionizing radiation. Certain embodiments involve methods for providing a nanocomposite material with resistance to high energy ionizing radiation using nanodiamond, zinc oxide and mixtures of these nanoparticles with other nanoparticles dispersed within the matrix. Other embodiments relate to methods of delivering and dispersing the nanoparticles through the material or a surface layer. Other embodiments include methods of forming chemical bonds between the nanoparticles and the material. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.Type: GrantFiled: November 9, 2010Date of Patent: July 2, 2013Assignee: International Technology CenterInventors: Vesna Borjanovic, Olga Alexander Shenderova, Gary Elder McGuire
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Patent number: 8344627Abstract: A method of generating a glow discharge plasma involves providing a pair of electrodes spaced apart by an electrode gap, and having a dielectric disposed in the electrode gap between the electrodes; placing the electrodes within an environment, wherein the electrode gap can be provided with a gas or gas mixture containing carbon at a specified pressure; and applying a rapid rise time voltage pulse across the electrodes to cause an extreme overvoltage condition, wherein the rapid rise time is less than a plasma generation time so that the extreme overvoltage condition occurs prior to current flow across the electrode gap. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.Type: GrantFiled: December 19, 2011Date of Patent: January 1, 2013Assignee: International Technology CenterInventors: William McClure Hooke, Allen Richard Martin, Gary Elder McGuire, Mark Alan Ray
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Patent number: 8308994Abstract: A stable colloidal suspension of carbon-based nanomaterials in a solvent has a stable colloidal suspension of nanodiamond particles having at least one additional carbon-based electromagnetic radiation attenuating nanomaterial nanomaterials disbursed and agitated into the solvent to produce said suspension. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.Type: GrantFiled: November 14, 2011Date of Patent: November 13, 2012Assignee: International Technology CenterInventors: Olga Shenderova, Garry B. Cunningham, Gary Elder McGuire
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Patent number: 8263976Abstract: A semiconductor structure consistent with certain implementations has a crystalline substrate oriented with a {111} plane surface that is within 10 degrees of surface normal. An epitaxially grown electrically insulating interlayer overlays the crystalline substrate and establishes a coincident lattice that mates with the surface symmetry of the {111} plane surface. An atomically stable two dimensional crystalline film resides on the epitaxial insulating layer with a coincident lattice match to the insulating interlayer. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.Type: GrantFiled: May 10, 2011Date of Patent: September 11, 2012Assignee: International Technology CenterInventors: Brian D. Schultz, Gary Elder McGuire
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Patent number: 8084947Abstract: A method of generating a glow discharge plasma involves providing a pair of electrodes spaced apart by an electrode gap, and having a dielectric disposed in the electrode gap between the electrodes; placing the electrodes within an environment, wherein the electrode gap can be provided with a gas or gas mixture containing carbon at a specified pressure; and applying a rapid rise time voltage pulse across the electrodes to cause an extreme overvoltage condition, wherein the rapid rise time is less than a plasma generation time so that the extreme overvoltage condition occurs prior to current flow across the electrode gap. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.Type: GrantFiled: September 24, 2009Date of Patent: December 27, 2011Assignee: International Technology CenterInventors: William McClure Hooke, Allen Richard Martin, Mark Alan Ray, Gary Elder McGuire, Brian Douglas Schultz
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Patent number: 8070988Abstract: A stable colloidal suspension of carbon-based nanomaterials in a solvent has a stable colloidal suspension of nanodiamond particles having at least one additional carbon nanomaterials disbursed and agitated into the solvent to produce said suspension. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.Type: GrantFiled: November 24, 2009Date of Patent: December 6, 2011Assignee: International Technology CenterInventors: Olga Shenderova, Garry B. Cunningham, Gary Elder McGuire
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Publication number: 20110210373Abstract: A semiconductor structure consistent with certain implementations has a crystalline substrate oriented with a {111} plane surface that is within 10 degrees of surface normal. An epitaxially grown electrically insulating interlayer overlays the crystalline substrate and establishes a coincident lattice that mates with the surface symmetry of the {111} plane surface. An atomically stable two dimensional crystalline film resides on the epitaxial insulating layer with a coincident lattice match to the insulating interlayer. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.Type: ApplicationFiled: May 10, 2011Publication date: September 1, 2011Inventors: Brian D. Schultz, Gary Elder McGuire
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Patent number: 7960259Abstract: A semiconductor structure consistent with certain implementations has a crystalline substrate oriented with a {111} plane surface that is within 10 degrees of surface normal. An epitaxially grown electrically insulating interlayer overlays the crystalline substrate and establishes a coincident lattice that mates with the surface symmetry of the {111} plane surface. An atomically stable two dimensional crystalline film resides on the epitaxial insulating layer with a coincident lattice match to the insulating interlayer. Methods of fabrication are disclosed. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.Type: GrantFiled: September 11, 2008Date of Patent: June 14, 2011Assignee: International Technology CenterInventors: Brian D. Schultz, Gary Elder McGuire
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Publication number: 20100140562Abstract: A stable colloidal suspension of carbon-based nanomaterials in a solvent has a stable colloidal suspension of nanodiamond particles having at least one additional carbon nanomaterials disbursed and agitated into the solvent to produce said suspension. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.Type: ApplicationFiled: November 24, 2009Publication date: June 10, 2010Inventors: Olga Shenderova, Garry B. Cunningham, Gary Elder McGuire
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Publication number: 20100079073Abstract: A method of generating a glow discharge plasma involves providing a pair of electrodes spaced apart by an electrode gap, and having a dielectric disposed in the electrode gap between the electrodes; placing the electrodes within an environment, wherein the electrode gap can be provided with a gas or gas mixture containing carbon at a specified pressure; and applying a rapid rise time voltage pulse across the electrodes to cause an extreme overvoltage condition, wherein the rapid rise time is less than a plasma generation time so that the extreme overvoltage condition occurs prior to current flow across the electrode gap. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.Type: ApplicationFiled: September 24, 2009Publication date: April 1, 2010Inventors: William McClure Hooke, Allen Richard Martin, Mark Alan Ray, Gary Elder McGuire, Brian Douglas Schultz
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Patent number: 7615931Abstract: A dielectric barrier plasma discharge device consistent with certain embodiments of the present invention has a pair of electrodes spaced apart by an electrode gap. A dielectric is disposed between the electrodes. The electrode gap is provided with a gas at a specified pressure. A rapid rise time voltage pulse generator produces a voltage pulse across the electrodes to cause an extreme overvoltage condition, wherein the rapid rise time is less than a plasma generation time so that the extreme overvoltage condition occurs prior to current flow across the electrode gap. Due to the high voltages and high current densities, the product yields an extremely high instantaneous power density. This extreme overvoltage condition is also believed to lead to production of shock waves and runaway free electrons. The resulting plasma can be utilized to carry out many potential tasks including, but not limited to etching, deposition, and sterilization.Type: GrantFiled: May 2, 2005Date of Patent: November 10, 2009Assignee: International Technology CenterInventors: William McClure Hooke, Allen Richard Martin, Mark Alan Ray, Gary Elder McGuire
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Publication number: 20090079040Abstract: A semiconductor structure consistent with certain implementations has a crystalline substrate oriented with a {111} plane surface that is within 10 degrees of surface normal. An epitaxially grown electrically insulating interlayer overlays the crystalline substrate and establishes a coincident lattice that mates with the surface symmetry of the {111} plane surface. An atomically stable two dimensional crystalline film resides on the epitaxial insulating layer with a coincident lattice match to the insulating interlayer. Methods of fabrication are disclosed. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.Type: ApplicationFiled: September 11, 2008Publication date: March 26, 2009Inventors: Brian D. Schultz, Gary Elder McGuire