Patents by Inventor Gary Elder McGuire

Gary Elder McGuire has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9368313
    Abstract: An integrated pressurized electronic power amplifier circuit including a plasma cathode structure and beam focusing approach leading to an electron beam, an interaction region; an input signal line for conducting an input signal into the interaction region; an output signal line for conducting an output signal from the interaction region; a collector for the electron beam; and an envelope for maintaining a pressurized ambient and a substrate for selected spatial alignment and thermal management; and wherein the plasma cathode structure generates a plasma as a source of electrons. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
    Type: Grant
    Filed: June 4, 2013
    Date of Patent: June 14, 2016
    Assignee: International Technology Center
    Inventor: Gary Elder McGuire
  • Patent number: 8475879
    Abstract: Polymer nanocomposites with improved resistance to high energy ionizing radiation. Certain embodiments involve methods for providing a nanocomposite material with resistance to high energy ionizing radiation using nanodiamond, zinc oxide and mixtures of these nanoparticles with other nanoparticles dispersed within the matrix. Other embodiments relate to methods of delivering and dispersing the nanoparticles through the material or a surface layer. Other embodiments include methods of forming chemical bonds between the nanoparticles and the material. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
    Type: Grant
    Filed: November 9, 2010
    Date of Patent: July 2, 2013
    Assignee: International Technology Center
    Inventors: Vesna Borjanovic, Olga Alexander Shenderova, Gary Elder McGuire
  • Patent number: 8344627
    Abstract: A method of generating a glow discharge plasma involves providing a pair of electrodes spaced apart by an electrode gap, and having a dielectric disposed in the electrode gap between the electrodes; placing the electrodes within an environment, wherein the electrode gap can be provided with a gas or gas mixture containing carbon at a specified pressure; and applying a rapid rise time voltage pulse across the electrodes to cause an extreme overvoltage condition, wherein the rapid rise time is less than a plasma generation time so that the extreme overvoltage condition occurs prior to current flow across the electrode gap. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
    Type: Grant
    Filed: December 19, 2011
    Date of Patent: January 1, 2013
    Assignee: International Technology Center
    Inventors: William McClure Hooke, Allen Richard Martin, Gary Elder McGuire, Mark Alan Ray
  • Patent number: 8308994
    Abstract: A stable colloidal suspension of carbon-based nanomaterials in a solvent has a stable colloidal suspension of nanodiamond particles having at least one additional carbon-based electromagnetic radiation attenuating nanomaterial nanomaterials disbursed and agitated into the solvent to produce said suspension. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
    Type: Grant
    Filed: November 14, 2011
    Date of Patent: November 13, 2012
    Assignee: International Technology Center
    Inventors: Olga Shenderova, Garry B. Cunningham, Gary Elder McGuire
  • Patent number: 8263976
    Abstract: A semiconductor structure consistent with certain implementations has a crystalline substrate oriented with a {111} plane surface that is within 10 degrees of surface normal. An epitaxially grown electrically insulating interlayer overlays the crystalline substrate and establishes a coincident lattice that mates with the surface symmetry of the {111} plane surface. An atomically stable two dimensional crystalline film resides on the epitaxial insulating layer with a coincident lattice match to the insulating interlayer. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
    Type: Grant
    Filed: May 10, 2011
    Date of Patent: September 11, 2012
    Assignee: International Technology Center
    Inventors: Brian D. Schultz, Gary Elder McGuire
  • Patent number: 8084947
    Abstract: A method of generating a glow discharge plasma involves providing a pair of electrodes spaced apart by an electrode gap, and having a dielectric disposed in the electrode gap between the electrodes; placing the electrodes within an environment, wherein the electrode gap can be provided with a gas or gas mixture containing carbon at a specified pressure; and applying a rapid rise time voltage pulse across the electrodes to cause an extreme overvoltage condition, wherein the rapid rise time is less than a plasma generation time so that the extreme overvoltage condition occurs prior to current flow across the electrode gap. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
    Type: Grant
    Filed: September 24, 2009
    Date of Patent: December 27, 2011
    Assignee: International Technology Center
    Inventors: William McClure Hooke, Allen Richard Martin, Mark Alan Ray, Gary Elder McGuire, Brian Douglas Schultz
  • Patent number: 8070988
    Abstract: A stable colloidal suspension of carbon-based nanomaterials in a solvent has a stable colloidal suspension of nanodiamond particles having at least one additional carbon nanomaterials disbursed and agitated into the solvent to produce said suspension. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
    Type: Grant
    Filed: November 24, 2009
    Date of Patent: December 6, 2011
    Assignee: International Technology Center
    Inventors: Olga Shenderova, Garry B. Cunningham, Gary Elder McGuire
  • Publication number: 20110210373
    Abstract: A semiconductor structure consistent with certain implementations has a crystalline substrate oriented with a {111} plane surface that is within 10 degrees of surface normal. An epitaxially grown electrically insulating interlayer overlays the crystalline substrate and establishes a coincident lattice that mates with the surface symmetry of the {111} plane surface. An atomically stable two dimensional crystalline film resides on the epitaxial insulating layer with a coincident lattice match to the insulating interlayer. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
    Type: Application
    Filed: May 10, 2011
    Publication date: September 1, 2011
    Inventors: Brian D. Schultz, Gary Elder McGuire
  • Patent number: 7960259
    Abstract: A semiconductor structure consistent with certain implementations has a crystalline substrate oriented with a {111} plane surface that is within 10 degrees of surface normal. An epitaxially grown electrically insulating interlayer overlays the crystalline substrate and establishes a coincident lattice that mates with the surface symmetry of the {111} plane surface. An atomically stable two dimensional crystalline film resides on the epitaxial insulating layer with a coincident lattice match to the insulating interlayer. Methods of fabrication are disclosed. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
    Type: Grant
    Filed: September 11, 2008
    Date of Patent: June 14, 2011
    Assignee: International Technology Center
    Inventors: Brian D. Schultz, Gary Elder McGuire
  • Publication number: 20100140562
    Abstract: A stable colloidal suspension of carbon-based nanomaterials in a solvent has a stable colloidal suspension of nanodiamond particles having at least one additional carbon nanomaterials disbursed and agitated into the solvent to produce said suspension. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
    Type: Application
    Filed: November 24, 2009
    Publication date: June 10, 2010
    Inventors: Olga Shenderova, Garry B. Cunningham, Gary Elder McGuire
  • Publication number: 20100079073
    Abstract: A method of generating a glow discharge plasma involves providing a pair of electrodes spaced apart by an electrode gap, and having a dielectric disposed in the electrode gap between the electrodes; placing the electrodes within an environment, wherein the electrode gap can be provided with a gas or gas mixture containing carbon at a specified pressure; and applying a rapid rise time voltage pulse across the electrodes to cause an extreme overvoltage condition, wherein the rapid rise time is less than a plasma generation time so that the extreme overvoltage condition occurs prior to current flow across the electrode gap. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
    Type: Application
    Filed: September 24, 2009
    Publication date: April 1, 2010
    Inventors: William McClure Hooke, Allen Richard Martin, Mark Alan Ray, Gary Elder McGuire, Brian Douglas Schultz
  • Patent number: 7615931
    Abstract: A dielectric barrier plasma discharge device consistent with certain embodiments of the present invention has a pair of electrodes spaced apart by an electrode gap. A dielectric is disposed between the electrodes. The electrode gap is provided with a gas at a specified pressure. A rapid rise time voltage pulse generator produces a voltage pulse across the electrodes to cause an extreme overvoltage condition, wherein the rapid rise time is less than a plasma generation time so that the extreme overvoltage condition occurs prior to current flow across the electrode gap. Due to the high voltages and high current densities, the product yields an extremely high instantaneous power density. This extreme overvoltage condition is also believed to lead to production of shock waves and runaway free electrons. The resulting plasma can be utilized to carry out many potential tasks including, but not limited to etching, deposition, and sterilization.
    Type: Grant
    Filed: May 2, 2005
    Date of Patent: November 10, 2009
    Assignee: International Technology Center
    Inventors: William McClure Hooke, Allen Richard Martin, Mark Alan Ray, Gary Elder McGuire
  • Publication number: 20090079040
    Abstract: A semiconductor structure consistent with certain implementations has a crystalline substrate oriented with a {111} plane surface that is within 10 degrees of surface normal. An epitaxially grown electrically insulating interlayer overlays the crystalline substrate and establishes a coincident lattice that mates with the surface symmetry of the {111} plane surface. An atomically stable two dimensional crystalline film resides on the epitaxial insulating layer with a coincident lattice match to the insulating interlayer. Methods of fabrication are disclosed. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
    Type: Application
    Filed: September 11, 2008
    Publication date: March 26, 2009
    Inventors: Brian D. Schultz, Gary Elder McGuire