Patents by Inventor Gary Eugene Daum

Gary Eugene Daum has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power transistors with a resistor coupled to a sense transistor
    Patent number: 10422818
    Abstract: An electronic device comprises: a first semiconductor die; a power transistor integrated in the first semiconductor die, the power transistor comprising a gate, a first terminal, and a second terminal; a sense transistor integrated in the first semiconductor die, the sense transistor comprising a gate coupled to the gate of the power transistor, a first terminal, and a second terminal coupled to the second terminal of the power transistor; and a first resistor integrated in the first semiconductor die, the first resistor comprising a polysilicon section and a metal section coupled to the polysilicon section, the first resistor comprising a first terminal and a second terminal, wherein the first terminal of the first resistor is coupled to the first terminal of the sense transistor.
    Type: Grant
    Filed: December 30, 2017
    Date of Patent: September 24, 2019
    Assignee: Texas Instruments Incorporated
    Inventors: Tikno Harjono, Vijay Krishnamurthy, Min Chu, Kuntal Joardar, Gary Eugene Daum, Subrato Roy, Vinayak Hegde, Ankur Chauhan, Sathish Vallamkonda, Md Abidur Rahman, Eung Jung Kim
  • POWER TRANSISTORS WITH A RESISTOR COUPLED TO A SENSE TRANSISTOR
    Publication number: 20190204361
    Abstract: An electronic device comprises: a first semiconductor die; a power transistor integrated in the first semiconductor die, the power transistor comprising a gate, a first terminal, and a second terminal; a sense transistor integrated in the first semiconductor die, the sense transistor comprising a gate coupled to the gate of the power transistor, a first terminal, and a second terminal coupled to the second terminal of the power transistor; and a first resistor integrated in the first semiconductor die, the first resistor comprising a polysilicon section and a metal section coupled to the polysilicon section, the first resistor comprising a first terminal and a second terminal, wherein the first terminal of the first resistor is coupled to the first terminal of the sense transistor.
    Type: Application
    Filed: December 30, 2017
    Publication date: July 4, 2019
    Inventors: Tikno HARJONO, Vijay KRISHNAMURTHY, Min CHU, Kuntal JOARDAR, Gary Eugene DAUM, Subrato ROY, Vinayak HEGDE, Ankur CHAUHAN, Sathish VALLAMKONDA, Md Abidur RAHMAN, Eung Jung KIM
  • Power FET with integrated sensors and method of manufacturing
    Patent number: 9748376
    Abstract: A semiconductor device and a method of making are disclosed. The device includes a substrate, a power field effect transistor (FET), and integrated sensors including a current sensor, a high current fault sensor, and a temperature sensor. The structure of the power FET includes a drain contact region of a first conductivity type disposed in the substrate, a drain drift region of the first conductivity type disposed over the drain contact region, doped polysilicon trenches disposed in the drain drift region, a body region of a second conductivity type, opposite from the first conductivity type, disposed between the doped polysilicon trenches, a source region disposed on a lateral side of the doped polysilicon trenches and in contact with the body region, and a source contact trench that makes contact with the source region and with the doped polysilicon trenches.
    Type: Grant
    Filed: August 26, 2016
    Date of Patent: August 29, 2017
    Assignee: Texas Instruments Incorporated
    Inventors: David J Baldwin, Gary Eugene Daum, Simon John Molloy, Abidur Rahman
  • Power FET With Integrated Sensors And Method Of Manufacturing
    Publication number: 20170179278
    Abstract: A semiconductor device and a method of making are disclosed. The device includes a substrate, a power field effect transistor (FET), and integrated sensors including a current sensor, a high current fault sensor, and a temperature sensor. The structure of the power FET includes a drain contact region of a first conductivity type disposed in the substrate, a drain drift region of the first conductivity type disposed over the drain contact region, doped polysilicon trenches disposed in the drain drift region, a body region of a second conductivity type, opposite from the first conductivity type, disposed between the doped polysilicon trenches, a source region disposed on a lateral side of the doped polysilicon trenches and in contact with the body region, and a source contact trench that makes contact with the source region and with the doped polysilicon trenches.
    Type: Application
    Filed: August 26, 2016
    Publication date: June 22, 2017
    Inventors: David J Baldwin, Gary Eugene Daum, Simon John Molloy, Abidur Rahman
  • High voltage channel diode
    Patent number: 8294210
    Abstract: A channel diode structure having a drift region and method of forming. A charge balanced channel diode structure having an electrode shield and method of forming.
    Type: Grant
    Filed: June 15, 2010
    Date of Patent: October 23, 2012
    Assignee: Texas Instruments Incorporated
    Inventors: Christopher Boguslaw Kocon, John Manning Savidge Neilson, Simon John Molloy, Haian Lin, Charles Walter Pearce, Gary Eugene Daum
  • HIGH VOLTAGE CHANNEL DIODE
    Publication number: 20110303976
    Abstract: A channel diode structure having a drift region and method of forming. A charge balanced channel diode structure having an electrode shield and method of forming.
    Type: Application
    Filed: June 15, 2010
    Publication date: December 15, 2011
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Christopher Boguslaw KOCON, John Manning Savidge NEILSON, Simon John MOLLOY, Haian LIN, Charles Walter PEARCE, Gary Eugene DAUM