Patents by Inventor Gary G. Ehlenberger

Gary G. Ehlenberger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for doping a semiconductor wafer having a diffusivity enhancement region
    Patent number: 5286660
    Abstract: A diffusivity and a solubility of dopant atoms are increased within a semiconductor wafer (30). A portion (36) of the semiconductor wafer (30) is disrupted by a technique of ion implantation thereby forming a defect layer (36). A predeposition layer (37) is formed by placing the semiconductor wafer (30) in a predeposition furnace. The defect layer (36) has a large number of point defects in a semiconductor crystal lattice which accept dopant atoms in excess of their solid solubility limit. The point defects increase the diffusivity and solubility of the dopant atoms thereby increasing a junction depth and surface concentration in subsequent high temperature diffusion steps.
    Type: Grant
    Filed: December 24, 1992
    Date of Patent: February 15, 1994
    Assignee: Motorola, Inc.
    Inventors: Herng-Der Chiou, Gary G. Ehlenberger, Earl D. Fuchs