Patents by Inventor Gary Haller

Gary Haller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7485279
    Abstract: Transition metal-substituted MCM-41 framework structures with a high degree of structural order and a narrow pore diameter distribution were reproducibly synthesized by a hydrothermal method using a surfactant and an anti-foaming agent. The pore size and the mesoporous volume depend linearly on the surfactant chain length. The transition metals, such as cobalt, are incorporated substitutionally and highly dispersed in the silica framework. Single wall carbon nanotubes with a narrow diameter distribution that correlates with the pore diameter of the catalytic framework structure were prepared by a Boudouard reaction. Nanostructures with a specified diameter or cross-sectional area can therefore be predictably prepared by selecting a suitable pore size of the framework structure.
    Type: Grant
    Filed: December 2, 2003
    Date of Patent: February 3, 2009
    Assignee: Yale University
    Inventors: Lisa Pfefferle, Gary Haller, Dragos Ciuparu
  • Patent number: 7357983
    Abstract: A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (±0.15 nm FWHM) was synthesized and used for the templated growth of single walled carbon nanotubes (SWNT). The physical properties of the SWNT (diameter, diameter distribution, electronic characteristic) can be controlled by the template pore size and the pore wall chemistry. The SWNT can find applications, for example, in chemical sensors and nanoscale electronic devices, such as transistors and crossbar switches.
    Type: Grant
    Filed: December 18, 2002
    Date of Patent: April 15, 2008
    Assignee: Yale University
    Inventors: Lisa Pfefferle, Gary Haller, Dragos Ciuparu
  • Publication number: 20070281481
    Abstract: A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (±0.15 nm FWHM) was synthesized and used for the templated growth of GaN nanostructures, such as single wall nanotubes, nanopipes and nanowires. The physical properties of the GaN nanostructures (diameter, diameter distribution, electronic characteristic) can be controlled by the template pore diameter and the pore wall chemistry. GaN nanostructures can find applications, for example, in nanoscale electronic devices, such as field-emitters, and in chemical sensors.
    Type: Application
    Filed: May 11, 2007
    Publication date: December 6, 2007
    Applicant: Yale University
    Inventors: Lisa Pfefferle, Dragos Ciuparu, Jung Han, Gary Haller
  • Patent number: 7258807
    Abstract: A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (±0.15 nm FWHM) was synthesized and used for the templated growth of GaN nanostructures, such as single wall nanotubes, nanopipes and nanowires. The physical properties of the GaN nanostructures (diameter, diameter distribution, electronic characteristic) can be controlled by the template pore diameter and the pore wall chemistry. GaN nanostructures can find applications, for example, in nanoscale electronic devices, such as field-emitters, and in chemical sensors.
    Type: Grant
    Filed: December 13, 2004
    Date of Patent: August 21, 2007
    Assignee: Yale University
    Inventors: Lisa Pfefferle, Dragos Ciuparu, Jung Han, Gary Haller
  • Publication number: 20050176249
    Abstract: A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (±0.15 nm FWHM) was synthesized and used for the templated growth of GaN nanostructures, such as single wall nanotubes, nanopipes and nanowires. The physical properties of the GaN nanostructures (diameter, diameter distribution, electronic characteristic) can be controlled by the template pore diameter and the pore wall chemistry. GaN nanostructures can find applications, for example, in nanoscale electronic devices, such as field-emitters, and in chemical sensors.
    Type: Application
    Filed: December 13, 2004
    Publication date: August 11, 2005
    Inventors: Lisa Pfefferle, Dragos Ciuparu, Jung Han, Gary Haller
  • Publication number: 20040247516
    Abstract: Transition metal-substituted MCM-41 framework structures with a high degree of structural order and a narrow pore diameter distribution were reproducibly synthesized by a hydrothermal method using a surfactant and an anti-foaming agent. The pore size and the mesoporous volume depend linearly on the surfactant chain length. The transition metals, such as cobalt, are incorporated substitutionally and highly dispersed in the silica framework. Single wall carbon nanotubes with a narrow diameter distribution that correlates with the pore diameter of the catalytic framework structure were prepared by a Boudouard reaction. Nanostructures with a specified diameter or cross-sectional area can therefore be predictably prepared by selecting a suitable pore size of the framework structure.
    Type: Application
    Filed: December 2, 2003
    Publication date: December 9, 2004
    Inventors: Lisa Pfefferle, Gary Haller, Dragos Ciuparu
  • Publication number: 20030148086
    Abstract: A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (±0.15 nm FWHM) was synthesized and used for the templated growth of single walled carbon nanotubes (SWNT). The physical properties of the SWNT (diameter, diameter distribution, electronic characteristic) can be controlled by the template pore size and the pore wall chemistry. The SWNT can find applications, for example, in chemical sensors and nanoscale electronic devices, such as transistors and crossbar switches.
    Type: Application
    Filed: December 18, 2002
    Publication date: August 7, 2003
    Inventors: Lisa Pfefferle, Gary Haller, Dragos Ciuparu