Patents by Inventor Gary Hamm
Gary Hamm has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9493886Abstract: Copper electroplating methods provide low internal stress copper deposits. Concentrations of accelerators in the copper electroplating bath vary as a function of the plating current density and the low internal stress copper deposit is observed as a matt copper deposit.Type: GrantFiled: September 9, 2012Date of Patent: November 15, 2016Inventors: George R. Allardyce, Gary Hamm, Narsmoul Karaya
-
Patent number: 9076657Abstract: Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.Type: GrantFiled: June 22, 2013Date of Patent: July 7, 2015Assignee: Rohm and Haas Electronic Materials LLCInventors: Gary Hamm, Jason A. Reese, George R. Allardyce
-
Publication number: 20140174936Abstract: Monovalent copper plating baths are used to metallize current tracks of the front side or emitter side of semiconductor wafers. Copper is selectively deposited on the current tracks by electrolytic plating or LIP. Additional metallization of the current tracks may be done using conventional metal plating baths. The metalized semiconductors may be used in the manufacture of photovoltaic devices.Type: ApplicationFiled: April 19, 2012Publication date: June 26, 2014Applicant: Rohm and Haas Electronic Materials LLCInventors: Gary Hamm, Jason A. Reese, Lingyun Wei
-
Publication number: 20140008234Abstract: A metal underlayer is selectively plated on semiconductor wafers immediately followed by plating copper on the metal underlayer using a low internal stress copper plating bath. Additional metallization may be done to build up the metal layers using conventional metal plating baths and methods to form current tracks. Formation of metal silicides is avoided. Good adhesion of the metals to the semiconductors is achieved. The metalized semiconductors may be used in the manufacture of photovoltaic devices.Type: ApplicationFiled: July 9, 2012Publication date: January 9, 2014Applicant: Rohm and Haas Electronic Materials LLCInventors: Lingyun WEI, Gary HAMM, Narsmoul KARAYA, JR.
-
Patent number: 8603314Abstract: Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.Type: GrantFiled: December 13, 2011Date of Patent: December 10, 2013Assignee: Rohm and Haas Electronic Materials LLCInventors: Gary Hamm, Jason A. Reese, George R. Allardyce
-
Publication number: 20130288476Abstract: Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.Type: ApplicationFiled: June 22, 2013Publication date: October 31, 2013Inventors: Gary HAMM, Jason A. REESE, George R. ALLARDYCE
-
Publication number: 20130264214Abstract: Metal electroplating processes are used in pH sensitive applications to plate metal layers on semiconductors. The semiconductors may be used in the manufacture of photovoltaic devices and solar cells.Type: ApplicationFiled: April 4, 2012Publication date: October 10, 2013Applicant: Rohm and Haas Electronic Materials LLCInventors: Gary Hamm, David L. Jacques, Jason A. Reese
-
Publication number: 20130240368Abstract: Copper electroplating methods provide low internal stress copper deposits. Concentrations of accelerators in the copper electroplating bath vary as a function of the plating current density and the low internal stress copper deposit is observed as a matt copper deposit.Type: ApplicationFiled: September 9, 2012Publication date: September 19, 2013Applicant: Rohm and Haas Electronic Material LLCInventors: George R. Allardyce, Gary Hamm, Narsmoul Karaya
-
Publication number: 20120184098Abstract: Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.Type: ApplicationFiled: December 13, 2011Publication date: July 19, 2012Applicant: Rohm and Haas Electronic Materials LLCInventors: Gary Hamm, Jason A. Reese, George R. Allardyce
-
Patent number: 7955978Abstract: Silicon containing substrates are coated with nickel. The nickel is coated with a protective layer and the combination is heated to a sufficient temperature to form nickel silicide. The nickel silicide formation may be performed in oxygen containing environments.Type: GrantFiled: August 25, 2010Date of Patent: June 7, 2011Assignee: Rohm and Hass Electronic Materials LLCInventors: John P. Cahalen, Gary Hamm, George R. Allardyce, David L. Jacques
-
Patent number: 7955977Abstract: Methods of light induced plating of nickel onto semiconductors are disclosed. The methods involve applying light at an initial intensity for a limited amount of time followed by reducing the intensity of the light for the remainder of the plating period to deposit nickel on a semiconductor.Type: GrantFiled: June 23, 2009Date of Patent: June 7, 2011Assignee: Rohm and Haas Electronic Materials LLCInventors: Gary Hamm, David L. Jacques
-
Patent number: 7939438Abstract: Methods of inhibiting background plating on semiconductor substrates using oxidizing agents are disclosed.Type: GrantFiled: March 19, 2009Date of Patent: May 10, 2011Assignee: Rohm and Haas Electronic Materials LLCInventors: Gary Hamm, David L. Jacques, Carl J. Colangelo
-
Publication number: 20110065274Abstract: Silicon containing substrates are coated with nickel. The nickel is coated with a protective layer and the combination is heated to a sufficient temperature to form nickel silicide. The nickel silicide formation may be performed in oxygen containing environments.Type: ApplicationFiled: August 25, 2010Publication date: March 17, 2011Applicant: Rohm and Haas Electronic Materials LLCInventors: John P. CAHALEN, Gary HAMM, George R. ALLARDYCE, David L. JACQUES
-
Publication number: 20100003817Abstract: Methods of light induced plating of nickel onto semiconductors are disclosed. The methods involve applying light at an initial intensity for a limited amount of time followed by reducing the intensity of the light for the remainder of the plating period to deposit nickel on a semiconductor.Type: ApplicationFiled: June 23, 2009Publication date: January 7, 2010Applicant: Rohm and Haas Electronic Materials LLCInventors: Gary Hamm, David L. Jacques
-
Publication number: 20090258491Abstract: Methods of inhibiting background plating on semiconductor substrates using oxidizing agents are disclosed.Type: ApplicationFiled: March 19, 2009Publication date: October 15, 2009Applicant: Rohm and Haas Electronic Materials LLCInventors: Gary Hamm, David L. Jacques, Carl J. Colangelo
-
Patent number: 7384535Abstract: Analytical methods are disclosed for determining the quantity of brightener and leveler in an electroplating bath in the presence of other organic additives, such as accelerators, brighteners and suppressors. The methods improve the reproducibility of measuring brighteners and levelers in electroplating baths.Type: GrantFiled: April 24, 2004Date of Patent: June 10, 2008Assignee: Rohm and Haas Electronic Materials LLCInventors: Wade Sonnenberg, Leon R. Barstad, Raymond Cruz, Gary Hamm, Mark J. Kapeckas, Erik Reddington, Katie Price, Thomas Buckley, Trevor Goodrich
-
Publication number: 20060151327Abstract: Analytical methods are disclosed for determining the quantity of organic components in a bath. The analytical methods work over a broad concentration range of organic components and are sensitive in measuring organic bath components at low concentrations.Type: ApplicationFiled: April 24, 2004Publication date: July 13, 2006Applicant: Rohm and Haas Electronic Materials, L.L.C.Inventors: Wade Sonnenberg, Leon Barstad, Raymond Cruz, Gary Hamm, Mark Kapeckas, Erik Reddington, Katie Price, Thomas Buckley, Trevor Goodrich
-
Publication number: 20060081475Abstract: A composition and method for electroplating a metal on a substrate. The composition has a chloride to brightener concentration ratio of from 20:1 to 125:1. The method of electroplating, which employs the composition, employs pulse patterns that improve physical properties of metal surfaces.Type: ApplicationFiled: November 30, 2005Publication date: April 20, 2006Applicant: Shipley Company, L.L.C.Inventors: Leon Barstad, Thomas Buckley, Raymond Cruz, Trevor Goodrich, Gary Hamm, Mark Kapeckas, Katie Price, Erik Reddington, Wade Sonnenberg
-
Publication number: 20050016858Abstract: A composition and method for electroplating a metal on a substrate. The composition has a chloride to brightener concentration ratio of from 20:1 to 125:1. The method of electroplating, which employs the composition, employs pulse patterns that improve physical properties of metal surfaces.Type: ApplicationFiled: December 19, 2003Publication date: January 27, 2005Applicant: Shipley Company, L.L.C.Inventors: Leon Barstad, Thomas Buckley, Raymond Cruz, Trevor Goodrich, Gary Hamm, Mark Kapeckas, Katie Price, Erik Reddington, Wade Sonnenberg
-
Publication number: 20050016856Abstract: Analytical methods are disclosed for determining the quantity of brightener and leveler in an electroplating bath in the presence of other organic additives, such as accelerators, brighteners and suppressors. The methods improve the reproducibility of measuring brighteners and levelers in electroplating baths.Type: ApplicationFiled: April 24, 2004Publication date: January 27, 2005Applicant: Rohm and Haas Electronic Materials, L.L.C.Inventors: Wade Sonnenberg, Leon Barstad, Raymond Cruz, Gary Hamm, Mark Kapeckas, Erik Reddington, Katie Price, Thomas Buckley, Trevor Goodrich
