Patents by Inventor Gary Horst Loechelt
Gary Horst Loechelt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230352577Abstract: An accumulation MOSFET includes a plurality of device cells. Each device cell includes a mesa adjoining a vertical trench is disposed in a doped semiconductor substrate. The mesa has a top mesa portion disposed on a bottom mesa portion. The top mesa portion has a width that is narrower than a width of the bottom mesa portion. The vertical trench adjoining the mesa has a top trench portion and a bottom trench portion. The top trench portion has a width that is wider than a width of the bottom trench portion. A dielectric is disposed on a sidewall of the vertical trench. A gate electrode disposed in the top trench portion forms an accumulation channel region in the top mesa portion and a shield electrode disposed in the bottom trench portion forms a depletion drift region in the bottom mesa portion.Type: ApplicationFiled: February 17, 2023Publication date: November 2, 2023Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Peter MOENS, Balaji PADMANABHAN, Dean E. PROBST, Prasad VENKATRAMAN, Tirthajyoti SARKAR, Gary Horst LOECHELT
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Patent number: 11728331Abstract: In a general aspect, a semiconductor device can include a semiconductor region, an active region disposed in the semiconductor region, a termination region disposed on the semiconductor region and adjacent to the active region, and a resistor disposed in the termination region. The resistor can include a trench, a conductive material disposed in the trench, and a first cavity separating the trench from the semiconductor region. A portion of the first cavity can be disposed between a bottom of the trench and the semiconductor region. The resistor can further include a second cavity separating the trench from the semiconductor region.Type: GrantFiled: January 22, 2021Date of Patent: August 15, 2023Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Gary Horst Loechelt, Marco Fuhrmann
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Patent number: 11710767Abstract: In a general aspect, a semiconductor device can include a semiconductor region, an active region disposed in the semiconductor region, and a termination region disposed on the semiconductor region and adjacent to the active region. The termination region can include a trench having a conductive material disposed therein. The termination region can further include a first cavity separating the trench from the semiconductor region. A portion of the first cavity can be disposed between a bottom of the trench and the semiconductor region. The termination region can also include a second cavity separating the trench from the semiconductor region.Type: GrantFiled: January 22, 2021Date of Patent: July 25, 2023Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventor: Gary Horst Loechelt
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Patent number: 11621331Abstract: A circuit and physical structure can help to counteract non-linear COSS associated with power transistors that operate at higher switching speeds and lower RDSON. In an embodiment, a component with a pn junction can be coupled to an n-channel IGFET. The component can include a p-channel IGFET, a pnp bipolar transistor, or both. A gate/capacitor electrode can be within a trench that is adjacent to the active regions of the component and n-channel IGFET, where the active regions can be within a semiconductor pillar. The combination of a conductive member and the semiconductor pillar of the component can be a charge storage component. The physical structure may include a compensation region, a barrier doped region, or both. In a particular embodiment, doped surface regions can be coupled to a buried conductive region without the use of a topside interconnect or a deep collector type of structure.Type: GrantFiled: September 10, 2020Date of Patent: April 4, 2023Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Gary Horst Loechelt, Balaji Padmanabhan, Dean E. Probst, Tirthajyoti Sarkar, Prasad Venkatraman, Muh-Ling Ger
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Patent number: 11552017Abstract: In a general aspect, a transistor can include a trench disposed in a semiconductor region and a gate electrode disposed in an upper portion of the trench. The gate electrode can include a first and second gate electrode segments. The transistor can also include a shield electrode having a first shield electrode portion disposed in a lower portion of the trench, and a second shield electrode portion orthogonally extending from the first shield electrode portion in the lower portion of the trench to the upper portion of the trench. The first shield electrode portion can be disposed below the first and second gate electrode segments, and the second shield electrode portion can being disposed between the first and second gate electrode segments. The transistor can also include a patterned buried conductor layer. The first and second gate electrode segments can be electrically coupled via the patterned buried conductor layer.Type: GrantFiled: January 25, 2021Date of Patent: January 10, 2023Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Prasad Venkatraman, Gary Horst Loechelt
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Publication number: 20220310802Abstract: A method includes defining a plurality of trenches of a first type that extend in a longitudinal direction in a semiconductor substrate, and defining a trench of a second type extending in a lateral direction and intersecting the plurality of trenches of the first type. The trench of the second type is in fluid communication with each of the intersected plurality of trenches of the first type. The method further includes disposing a shield poly layer in the plurality of trenches of the first type and the trench of the second type, disposing an inter-poly dielectric layer and a gate poly layer above the shield poly layer in the plurality of trenches of the first type and the trench of the second type, and forming an electrical contact to the shield poly layer through an opening in the inter-poly dielectric layer and the gate poly layer disposed in the trench of the second type.Type: ApplicationFiled: March 21, 2022Publication date: September 29, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Prasad VENKATRAMAN, Peter BURKE, Gary Horst LOECHELT, Balaji PADMANABHAN, Emily M. LINEHAN
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Patent number: 11411077Abstract: An electronic device can include doped regions and a trench disposed between the doped regions, wherein the trench can include a conductive member. In an embodiment, a parasitic transistor can include doped regions as drain/source regions and the conductive member as a gate electrode. A semiconductor material can lie along a bottom or sidewall of the trench and be a channel region of the parasitic transistor. The voltage on the gate electrode or the dopant concentration can be selected so that the channel region does not reach inversion during the normal operation of the electronic device.Type: GrantFiled: September 10, 2020Date of Patent: August 9, 2022Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Gary Horst Loechelt, Balaji Padmanabhan, Dean E. Probst, Tirthajyoti Sarkar, Prasad Venkatraman, Muh-Ling Ger
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Publication number: 20220238642Abstract: In a general aspect, a semiconductor device can include a semiconductor region, an active region disposed in the semiconductor region, and a termination region disposed on the semiconductor region and adjacent to the active region. The termination region can include a trench having a conductive material disposed therein. The termination region can further include a first cavity separating the trench from the semiconductor region. A portion of the first cavity can be disposed between a bottom of the trench and the semiconductor region. The termination region can also include a second cavity separating the trench from the semiconductor region.Type: ApplicationFiled: January 22, 2021Publication date: July 28, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventor: Gary Horst LOECHELT
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Publication number: 20220238512Abstract: In a general aspect, a semiconductor device can include a semiconductor region, an active region disposed in the semiconductor region, a termination region disposed on the semiconductor region and adjacent to the active region, and a resistor disposed in the termination region. The resistor can include a trench, a conductive material disposed in the trench, and a first cavity separating the trench from the semiconductor region. A portion of the first cavity can be disposed between a bottom of the trench and the semiconductor region. The resistor can further include a second cavity separating the trench from the semiconductor region.Type: ApplicationFiled: January 22, 2021Publication date: July 28, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Gary Horst Loechelt, Marco Fuhrmann
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Publication number: 20220238427Abstract: In a general aspect, a transistor can include a trench disposed in a semiconductor region and a gate electrode disposed in an upper portion of the trench. The gate electrode can include a first and second gate electrode segments. The transistor can also include a shield electrode having a first shield electrode portion disposed in a lower portion of the trench, and a second shield electrode portion orthogonally extending from the first shield electrode portion in the lower portion of the trench to the upper portion of the trench. The first shield electrode portion can be disposed below the first and second gate electrode segments, and the second shield electrode portion can being disposed between the first and second gate electrode segments. The transistor can also include a patterned buried conductor layer. The first and second gate electrode segments can be electrically coupled via the patterned buried conductor layer.Type: ApplicationFiled: January 25, 2021Publication date: July 28, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Prasad VENKATRAMAN, Gary Horst LOECHELT
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Publication number: 20220207351Abstract: According to an aspect, a semiconductor design system includes at least one neural network including a first predictive model and a second predictive model, where the first predictive model is configured to predict a first characteristic of a semiconductor device, and the second predictive model is configured to predict a second characteristic of the semiconductor device. The semiconductor design system includes an optimizer configured to use the neural network to generate a design model based on a set of input parameters, where the design model includes a set of design parameters for the semiconductor device such that the first characteristic and the second characteristic achieve respective threshold conditions.Type: ApplicationFiled: December 30, 2020Publication date: June 30, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Tirthajyoti SARKAR, Diann M. DOW, Gary Horst LOECHELT, Prateek SHARMA
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Publication number: 20220077282Abstract: An electronic device can include doped regions and a trench disposed between the doped regions, wherein the trench can include a conductive member. In an embodiment, a parasitic transistor can include doped regions as drain/source regions and the conductive member as a gate electrode. A semiconductor material can lie along a bottom or sidewall of the trench and be a channel region of the parasitic transistor. The voltage on the gate electrode or the dopant concentration can be selected so that the channel region does not reach inversion during the normal operation of the electronic device.Type: ApplicationFiled: September 10, 2020Publication date: March 10, 2022Applicant: Semiconductor Components Industries, LLCInventors: Gary Horst Loechelt, Balaji Padmanabhan, Dean E. Probst, Tirthajyoti Sarkar, Prasad Venkatraman, Muh-Ling Ger
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Publication number: 20220077290Abstract: A circuit and physical structure can help to counteract non-linear COSS associated with power transistors that operate at higher switching speeds and lower RDSON. In an embodiment, a component with a pn junction can be coupled to an n-channel IGFET. The component can include a p-channel IGFET, a pnp bipolar transistor, or both. A gate/capacitor electrode can be within a trench that is adjacent to the active regions of the component and n-channel IGFET, where the active regions can be within a semiconductor pillar. The combination of a conductive member and the semiconductor pillar of the component can be a charge storage component. The physical structure may include a compensation region, a barrier doped region, or both. In a particular embodiment, doped surface regions can be coupled to a buried conductive region without the use of a topside interconnect or a deep collector type of structure.Type: ApplicationFiled: September 10, 2020Publication date: March 10, 2022Applicant: Semiconductor Components Industries, LLCInventors: Gary Horst Loechelt, Balaji Padmanabhan, Dean E. Probst, Tirthajyoti Sarkar, Prasad Venkatraman, Muh-Ling Ger
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Publication number: 20190074374Abstract: A circuit can include a field-effect transistor having a body, a drain, a gate, and a source. In an embodiment, the circuit can further include a bipolar transistor having a base and a collector, wherein the collector of the bipolar transistor is coupled to the body of the field-effect transistor; and the drain of the field-effect transistor is coupled to the base of the bipolar transistor. In another embodiment, the circuit can include a diode having an anode and a cathode, wherein the source of the field-effect transistor is coupled to the anode of the diode, and the gate of the field effect transistor is coupled to the cathode of the diode. In another aspect, an electronic device can include one or more physical structures that correspond to components within the circuits.Type: ApplicationFiled: November 6, 2018Publication date: March 7, 2019Applicant: Semiconductor Components Industries, LLCInventor: Gary Horst LOECHELT
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Patent number: 10164091Abstract: A circuit can include a field-effect transistor having a body, a drain, a gate, and a source. In an embodiment, the circuit can further include a bipolar transistor having a base and a collector, wherein the collector of the bipolar transistor is coupled to the body of the field-effect transistor; and the drain of the field-effect transistor is coupled to the base of the bipolar transistor. In another embodiment, the circuit can include a diode having an anode and a cathode, wherein the source of the field-effect transistor is coupled to the anode of the diode, and the gate of the field effect transistor is coupled to the cathode of the diode. In another aspect, an electronic device can include one or more physical structures that correspond to components within the circuits.Type: GrantFiled: August 2, 2017Date of Patent: December 25, 2018Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventor: Gary Horst Loechelt