Abstract: A server access log includes data records each describing a previous query regarding a suspect computer file of a client computer. Each record includes the CRC code for the suspect computer file, the result of the malware analysis performed on the backend server and other attributes and values. The log is analyzed to retrieve relevant attributes and values from each record. Key attributes and values are generated such as region and continuous query. All CRC codes are grouped according to attribute values. Each group is analyzed to determine the network traffic associated with downloading the entire group to all user computers and the network traffic associated with not downloading the group but responding to future malware queries regarding CRC codes in the group. CRC codes are removed from each group if necessary. CRC code-result pairs for each group are downloaded to all user computers as a pre-fetch cache.

Abstract: A method and apparatus for processing a semiconductor wafer is provided for reducing dimensional variation by feeding forward information relating to photoresist mask CD and profile and underlying layer thickness measured at several points on the wafer to adjust the next process the inspected wafer will undergo (e.g., the etch process). After the processing step, dimensions of a structure formed by the process, such as the CD and depth of a trench formed by the process, are measured at several points on the wafer, and this information is fed back to the process tool to adjust the process for the next wafer to further reduce dimensional variation. In certain embodiments, the CD, profile, thickness and depth measurements, etch processing and post-etch cleaning are performed at a single module in a controlled environment.

Abstract: A method and apparatus for processing a semiconductor wafer is provided for reducing dimensional variation by feeding forward information relating to photoresist mask CD and profile and underlying layer thickness measured at several points on the wafer to adjust the next process the inspected wafer will undergo (e.g., the etch process). After the processing step, dimensions of a structure formed by the process, such as the CD and depth of a trench formed by the process, are measured at several points on the wafer, and this information is fed back to the process tool to adjust the process for the next wafer to further reduce dimensional variation. In certain embodiments, the CD, profile, thickness and depth measurements, etch processing and post-etch cleaning are performed at a single module in a controlled environment.

Abstract: Apparatus for retaining a workpiece in a semiconductor wafer processing system. The apparatus has a collector positioned between an electrostatic chuck pedestal and the floor of the processing chamber. The collector has inlet and exhaust control valves connected to inlet and exhaust ports for providing and expelling a backside heat transfer gas (e.g., Helium). Heat transfer exhaust cavities in the collector are connected to the exhaust port to rapidly draw the gas off the backside of the wafer. Additionally, control of the heat transfer gas layer uniformity during processing is achieved by opening and closing the valves to the inlet and exhaust ports as required.