Abstract: In a fabrication process, photoresist is disposed over a semiconductor substrate (10), covering a front surface (11) of the substrate (10) and filling trenches (12, 14, 16, 18) therein. The photoresist is planarized in chemical mechanical polishing to achieve a uniform thickness throughout the substrate (10). An anisotropic etching process partially removes the photoresist in the trenches (12, 14, 16, 18), thereby creating recesses in the trenches (12, 14, 16, 18). Because the thickness of the photoresist is uniform throughout the substrate (10) before the etching process, the depths of the recesses in different trenches (12, 14, 16, 18) are substantially equal to each other. A uniform recess depth throughout the substrate (10) is thereby achieved. The uniform recess depth facilitates in ensuring the semiconductor devices fabricated on the substrate (10) to have consistent parameters, characteristics, and performances.

Abstract: An apparatus for and method of detecting the presence of a brush used in a semiconductor wafer cleaner for post-CMP processing is described. Semiconductor wafers are loaded into the wet environment of the wafer cleaner, affixed to a rotatable fixture and rotated at high speed. The rotatable fixture is effectuated by a servo motor linked to a servo controller and a torque monitor. A first torque on the rotating wafer is calculated prior to the start of the brush cleaning cycle. During the brush cleaning cycle, as the brush within the brush cleaner contacts the rotating wafer, the torque on the wafer increases and a second torque is calculated. If, during the brush cleaning cycle, the second torque calculation is substantially equal to the first torque calculation, the brush cleaner is not contacting the wafer and cleaning has not progressed. A tool user can be notified to reaffix the brush within the cleaner.

Abstract: A polishing apparatus for polishing a substrate. The polishing apparatus has a slurry delivery system for delivering slurry to the apparatus; a porous polishing pad having an upper surface at which the substrate is polished; and a rotating platen upon which the porous pad lies. The rotating platen has a recess which has a first portion in communication with the delivery means for delivering slurry into the first portion. The recess further has a second portion extending under the polishing pad. Slurry is delivered from the first portion to the second portion and to the upper surface of the pad where it aids in the polishing of the substrate. Preferably, the first portion of the recess is situated such that the slurry delivered to the top surface returns to the first portion for removal or reuse due to the rotational force of the rotating platen.

Abstract: In a fabrication process, photoresist is disposed over a semiconductor substrate (10), covering a front surface (11) of the substrate (10) and filling trenches (12, 14, 16, 18) therein. The photoresist is planarized in chemical mechanical polishing to achieve a uniform thickness throughout the substrate (10). An anisotropic etching process partially removes the photoresist in the trenches (12, 14, 16, 18), thereby creating recesses in the trenches (12, 14, 16, 18). Because the thickness of the photoresist is uniform throughout the substrate (10) before the etching process, the depths of the recesses in different trenches (12, 14, 16, 18) are substantially equal to each other. A uniform recess depth throughout the substrate (10) is thereby achieved. The uniform recess depth facilitates in ensuring the semiconductor devices fabricated on the substrate (10) to have consistent parameters, characteristics, and performances.

Abstract: A polishing apparatus for polishing a substrate. The polishing apparatus has a slurry delivery system for delivering slurry to the apparatus; a porous polishing pad having an upper surface at which the substrate is polished; and a rotating platen upon which the porous pad lies. The rotating platen has a recess which has a first portion in communication with the delivery means for delivering slurry into the first portion. The recess further has a second portion extending under the polishing pad. Slurry is delivered from the first portion to the second portion and to the upper surface of the pad where it aids in the polishing of the substrate. Preferably, the first portion of the recess is situated such that the slurry delivered to the top surface returns to the first portion for removal or reuse due to the rotational force of the rotating platen.