Abstract: An iron-based magnetic thin film comprising from 0% to 25% of aluminum in terms of atomic ratio; wherein the iron-based magnetic thin film comprises a plurality of crystals having an average crystallite size of 100 ? or less; the iron-based magnetic thin film is disposed on a surface of a substrate; and a <110> direction of a crystal of the iron-based magnetic thin film is perpendicular to the surface of the substrate.

Abstract: An Fe—Al alloy magnetic thin film according to the present invention contains, in terms of atomic ratio, 0% to 35% (inclusive of 0%) of Co and 1.5% to 2% of Al. A direction of a crystal contained in a material is perpendicular to a substrate surface and a crystallite size is 150 ? or less. Methods of making and using said thin film are also disclosed.

Abstract: A spin-valve device of a CPP structure which has a high resistance, and which generates a high output signal with low current. The CPP spin-valve device including a spin-valve element having a substrate and a layered structure formed on the substrate. The layered structure includes a first thin film layer of ferromagnetic material, a second thin film layer of ferromagnetic material, and a thin non-magnetic layer structure separating the first and second layers. One of the first and second thin film layers is defined as a free layer and the other layer is defined as a pinned layer, where the free layer has a direction of magnetization that is easier to change than a direction of magnetization of the pinned layer by application of a magnetic field. The non-magnetic layer structure includes a conducting part and insulating part, with the conduction part having an area that is smaller than an area of the free layer.

Abstract: A spin-valve device of a CPP structure which has a high resistance, and which generates a high output signal with a low current. The CPP spin-valve device including a spin-valve element having a substrate and a layered structure formed on the substrate. The layered structure includes a first thin film layer of ferromagnetic material, a second thin film layer of ferromagnetic material, and a thin non-magnetic layer structure separating the first and second layers. One of the first and second thin film layers is defined as a free layer and the other layers is defined as a pinned layer, where the free layer has a direction of magnetization that is easier to change than a direction of magnetization of the pinned layer by application of a magnetic field. The non-magnetic layer structure includes a conducting part and insulating part, with the conducting part having an area that is smaller than an area of the free layer.