Abstract: An object-detection system suitable for an automated vehicle includes an object-detection device and an accelerometer. The object-detection device is configured to be installed on a vehicle. The object-detection device is operable to detect an object proximate to the vehicle. The accelerometer is coupled to the object-detection device. The accelerometer operable to determine an orientation-angle of the object-detection device relative to a gravity-direction.

Abstract: A system, device, and method for minimizing x-axis and/or y-axis offset shift due to internally produced as well as externally produced on chip temperature imbalances. At least one temperature gradient canceling device is disposed on a substrate including a temperature gradient sensitive device having at least one pair of sensors. Voltage signals generated by the temperature gradient canceling devices can be combined with voltage signals generated by each of the pair of sensors to account for the offset.

Abstract: A system, device, and method for minimizing x-axis and/or y-axis offset shift due to internally produced as well as externally produced on chip temperature imbalances. At least one temperature gradient canceling device is disposed on a substrate including a temperature gradient sensitive device having at least one pair of sensors. Voltage signals generated by the temperature gradient canceling devices can be combined with voltage signals generated by each of the pair of sensors to account for the offset.

Abstract: A proof mass (11) for a MEMS device is provided herein. The proof mass comprises a base (13) comprising a semiconductor material, and at least one appendage (15) adjoined to said base by way of a stem (21). The appendage (15) comprises a metal (17) or other such material that may be disposed on a semiconductor material (19). The metal increases the total mass of the proof mass (11) as compared to a proof mass of similar dimensions made solely from semiconductor materials, without increasing the size of the proof mass. At the same time, the attachment of the appendage (15) by way of a stem (21) prevents stresses arising from CTE differentials in the appendage from being transmitted to the base, where they could contribute to temperature errors.

Abstract: A method for creating a MEMS structure is provided. In accordance with the method, a substrate (53) is provided having a sacrificial layer (55) disposed thereon and having a layer of silicon (57) disposed over the sacrificial layer. A first trench (59) is created which extends through the silica layer and the sacrificial layer and which separates the sacrificial layer into a first region (61) enclosed by the first trench and a second region (63) exterior to the first trench. A first material (65) is deposited into the first trench such that the first material fills the first trench to a depth at least equal to the thickness of the sacrificial layer. A second trench (71) is created exterior to the first trench which extends through at least the silicon layer and exposes at least a portion of the second region of the sacrificial layer.

Abstract: A proof mass (11) for a MEMS device is provided herein. The proof mass comprises a base (13) comprising a semiconductor material, and at least one appendage (15) adjoined to said base by way of a stem (21). The appendage (15) comprises a metal (17) or other such material that may be disposed on a semiconductor material (19). The metal increases the total mass of the proof mass (11) as compared to a proof mass of similar dimensions made solely from semiconductor materials, without increasing the size of the proof mass. At the same time, the attachment of the appendage (15) by way of a stem (21) prevents stresses arising from CTE differentials in the appendage from being transmitted to the base, where they could contribute to temperature errors.

Abstract: A method for creating a MEMS structure is provided. In accordance with the method, a substrate (53) is provided having a sacrificial layer (55) disposed thereon and having a layer of silicon (57) disposed over the sacrificial layer. A first trench (59) is created which extends through the silica layer and the sacrificial layer and which separates the sacrificial layer into a first region (61) enclosed by the first trench and a second region (63) exterior to the first trench. A first material (65) is deposited into the first trench such that the first material fills the first trench to a depth at least equal to the thickness of the sacrificial layer. A second trench (71) is created exterior to the first trench which extends through at least the silicon layer and exposes at least a portion of the second region of the sacrificial layer.

Abstract: An acceleration sensor includes a substrate (101), a proof mass (110, 210) over the substrate and having first and second attachment regions (113, 114, 213, 214), and an anchor structure (120, 221, 222) coupled to the substrate. The sensor additionally includes a first suspension beam (130, 230) coupling the anchor structure to the first attachment region to suspend the proof mass over the substrate. The sensor further includes a second suspension beam (140, 240) coupling the anchor structure to the second attachment region to suspend the proof mass over the substrate. The first suspension beam has a first radius (311, 321) extending from the anchor structure to the first attachment region, and the second suspension beam has a second radius (312, 322) extending from the anchor structure to the second attachment region where the first radius is greater than the second radius.

Abstract: An apparatus and method is disclosed for a semiconductor wafer front side pressure testing system (200, 300, 400). Negative or positive pressure is applied to the top portion of a semiconductor wafer (216, 316) mounted on a support structure or wafer chuck (222, 322, 422). In one embodiment, bellows (232) coupled to the wafer chuck (222, 322, 422) and a platen (218, 318, 418) located above the semiconductor wafer (216, 316) provides a sealed atmosphere above the semiconductor wafer (216, 316) to permit negative or positive pressure to be introduced into this sealed atmosphere. In another embodiment, a seal is provided by a wall portion (421) connected to the chuck (422) contacting a gasket (419) located beneath the platen (418).

Abstract: An actuator includes a support layer (110), a stationary structure (130) located over the support layer and including two portions (131, 132, 731, 732, 831, 832) adjacent to each other and separated from each other by a gap (133), and a movable structure (140, 240, 340, 440, 540, 650, 740, 840) coupled to and located over the support layer, located adjacent to the stationary structure, and movable relative to the stationary structure and the support layer. A portion (143, 243, 343, 443, 543, 643, 743, 843) of the movable structure is located in the gap between the two portions of the stationary structure, and the portion of the movable structure comprises a body (144) and an asymmetric structure (145, 245, 345, 445, 545, 645, 745, 845) extending from the body.

Abstract: Pressure sensors that are fabricated to sense low pressures are tested and calibrated by providing a controlled gas flow or leak to create a pressure during testing. Rather than placing the pressure sensor in a sealed environment, a controlled leak of a gas is used to induce a stable and controllable pressure region over the pressure sensor during testing. The stable low pressure region is monitored via a sensing tube.

Abstract: A circuit (20) and a method for selecting a circuit module (M.sub.N) from a plurality of circuit modules (M.sub.0 -M.sub.N) coupled to a common bus (23). The circuit (20) includes a plurality of resistor divider networks (RD.sub.0 -RD.sub.N), wherein a single resistor divider network is coupled to a corresponding circuit module. Each resistor divider network (RD.sub.0 -RD.sub.N) provides the corresponding circuit module with an analog voltage upon initialization of the circuit (20). The analog voltage is converted into a digital voltage and serves as a unique address for the corresponding circuit module (M.sub.0 -M.sub.N). An analog electrical signal on the common bus (23) is converted into a digital electrical signal which is compared with the addresses of the plurality of circuit modules (M.sub.0 -M.sub.N). The circuit module having an address that matches the digital electrical signals is selected for receiving data or control signals from external circuitry.